Abstract: The controller that controls a memory device includes: a processor suitable for controlling the memory device to perform a first soft read operation by using first soft read voltages; and an error correction code (ECC) codec suitable for performing a first soft decision decoding operation based on first soft read data obtained through the first soft read operation, wherein the processor controls the memory device to perform a second soft read operation with an additional read voltage, of second soft read voltages, that is different than any of the first soft read voltages and which is determined based on the first soft read data, according to whether the first soft decision decoding operation failed, and wherein the ECC codec performs a second soft decision decoding operation based on the first soft read data and second soft read data obtained through the second soft read operation.

Abstract: The present technology relates to an electronic device. More specifically, the present technology relates to a memory controller and a method of operating the same. According to an embodiment, a memory controller includes an error corrector configured to receive read data from a memory device and output a first message obtained by performing error correction decoding on the read data based on a parity check matrix, a randomizer configured to generate a second message by inverting the first message, and an operation controller configured to output the second message, wherein the parity check matrix is a matrix in which a number of elements, each of which is one (1) among elements included in each row, is an even number or a matrix in which an exclusive OR on elements included in each row is zero (0).

Abstract: The present technology includes an electronic device and a method of operating the same using an artificial neural network. The electronic device according to the present technology includes a decoding controller inputting a primary syndrome vector generated based on a read vector and a parity check matrix to a trained artificial neural, and selecting any one of a first error correction decoding algorithm and a second error correction decoding algorithm based on an output of the trained artificial neural network corresponding to the input, and an error correction decoder performing error correction decoding on a read vector using the selected error correction decoding algorithm. The output of the trained artificial neural network includes a first predicted value indicating a probability that a first error correction decoding using the first error correction decoding algorithm is successful.

Abstract: The present technology relates to an error correction circuit. According to the present technology, an error correction circuit performing error correction encoding on a plurality of messages to be stored in a memory device includes a first error correction encoder and a second error correction encoder. The first error correction encoder generates a plurality of codewords by performing first error correcting encoding on each of the plurality of messages. The second error correction encoder performs a second error correction encoding operation by performing an exclusive OR operation on symbols of an identical column layer within the codewords. The second error correction encoder determines a data unit as a target of the second error correction encoding operation based on a use period of the memory device.

Abstract: A memory system includes a memory device including a plane including a plurality of memory blocks for storing multi-bit data; and a controller configured to detect, when a problem-causing operation is performed on a first memory block among the memory blocks, remaining memory blocks, except the first memory block, in the plane as being in a problem occurrence candidate group, search for a table, when a read command for a second memory block of the problem occurrence candidate group is received, for a read voltage application order corresponding to the second memory block, and control the memory device to perform a read operation on the second memory block by sequentially applying a plurality of read voltages according to the searched read voltage application order, wherein the problem-causing operation is a program operation or an erase operation.

Abstract: A memory system includes a memory device including a plane including a plurality of memory blocks, each memory block including a plurality of memory cells, each memory cell capable of storing multi-bit data, and a controller configured to determine that a second memory block is a candidate block when an issue-triggering operation is performed for a first memory block, adjust levels of read voltages when receiving a read command for data stored in the second memory block determined as the candidate block, and control the memory device to supply adjusted levels of the read voltages to the second memory block to perform a read operation corresponding to the read command. The second memory block and the first memory block are included in the same plane. The issue-triggering operation includes either a program operation or an erase operation.

Abstract: The present disclosure relates to an yttrium-based granular powder for thermal spraying. More particularly, the yttrium-based granular powder is a mixture including one or more yttrium compound powders selected from among Y2O3, YOF, YF3, Y4Al2O9, Y3Al5O12, and YAlO3, and a silica (SiO2) powder. A Y—Si—O intermediate phase is included therein in a content of less than 10 wt %. The thermal spray coating manufactured using the same has a low porosity, and forms a very dense thin film, thus ensuring excellent plasma resistance.

Abstract: Proposed is a method of producing an yttrium-based thermal spray coating. The method includes forming a coating on a substrate by atmospheric plasma spraying of an yttrium-based granular powder including at least one yttrium compound powder selected from the group consisting of Y2O3, YOF, YF3, Y4Al2O9, Y3Al5O12, and YAlO3, and a silica (SiO2) powder. The yttrium-based granular powder includes less than 10 w % of a Y—Si—O mesophase. Then yttrium-based thermal spray coating can exhibit low porosity, high density, and excellent plasma resistance.

Abstract: A controller for controlling a memory device including memory cells, the controller includes: a memory suitable for storing offset level information which is determined based on a sample read level according to characteristics of the memory cells and Gaussian modeling of the memory cells; and a processor suitable for generating an estimated read level based on the Gaussian madding and data read from the memory cells, and applying a compensated read voltage to control the memory device to perform read operations of the memory cells, wherein the compensated read voltage is generated by applying the offset level information to the estimated read level.

Abstract: A memory device includes: a plurality of memory cells; soft read logic configured to generate soft data by reading data from the plurality of memory cells in response to a soft read command from a controller, the soft data including at least a major symbol and at least a minor symbol; a compressor configured to generate compressed data by: encoding, into a code alphabet having a second length, a major source alphabet including repetitions of the major symbol by a first length among a plurality of source alphabets included in the soft data, and encoding, into a code alphabet having a longer length than the second length, a minor source alphabet including repetitions of the major symbol by a shorter length than the first length and ending with one minor symbol; and an interface configured to provide the compressed data to the controller.

Abstract: Disclosed are devices, systems and methods for error correction encoding and decoding. A memory controller includes an error correction encoder for generating a codeword by performing error correction encoding, using a parity check matrix including a plurality of sub-matrices; and an error correction decoder for performing error correction decoding on a read vector corresponding to the codeword on a column layer basis while sequentially selecting column layers of the parity check matrix used for the error correction encoding, in the error correction decoding, the column layer including a set of columns of the parity check matrix. Rows included in the parity check matrix are grouped into a plurality of row groups, and at most one cyclic permutation matrix (CPM) is included for each column layer in each of the row groups.

Abstract: Provided are an organic electric element comprising as a phosphorescent host material, a mixture of the compounds of Formula (1) and Formula (2), and an organic electronic device or apparatus thereof for achieving a high luminous efficiency, a low driving voltage, and an improved lifespan.

Abstract: A memory system includes a memory device including memory cells, and a controller configured to control the memory device to read target data from at least a part of the memory cells according to a read voltage level determined based on a mean difference and a standard deviation ratio of neighboring threshold voltage distributions of at least the target data.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprising: a treating vessel including an outer cup and an inner cup placed in an inner side of the outer cup, the inner cup and the outer cup in combination defining a recollecting route for a recollecting a liquid; a rotatable spin head placed within the treating vessel on which a cleaning jig is placed; wherein the treating vessel comprises a first protrusion protruding from an inner side surface of the outer cup to direct a cleaning liquid scattering from the cleaning jig toward a surface of the inner cup.

Abstract: Disclosed is a degassing apparatus. The degassing apparatus includes a dissolved gas extracting nozzle that extracts dissolved gases in a form of bubbles from a treatment solution including the dissolved gases, a first tank that separates the bubbles extracted while passing through the dissolved gas extracting nozzle from the treatment solution, and a second tank having a stabilization space, in which the treatment solution, from which the bubbles have been separated, is stored from the first tank and is stabilized. The dissolved gas extracting nozzle is configured such that a diameter of an outlet is smaller than a diameter of an intermediate passage such that the dissolved gases in the treatment solution are extracted in the form of the bubbles through a cavitation phenomenon.

Abstract: Provided are a mixture of compounds used as a phosphorescent host material in an organic electronic element, an organic electronic element comprising the compounds to achieve high light-emitting efficiency, low driving voltage, and significantly improved lifespan, and an electronic device comprising the element.

Abstract: Use of a mixture of compounds according to the present invention as a phosphorescent host material can achieve a high light emitting efficiency and a low driving voltage in an organic electric element. In addition, an organic electric element having a greatly improved lifespan, and an electronic device comprising the same are provided.

Abstract: A memory system may include a memory device and a memory controller. The memory device may include memory cells. The memory controller may estimate and use an read voltage to distinguish one or more memory cells corresponding to a first threshold voltage distribution from one or more memory cells corresponding to a second threshold voltage distribution, the read voltage being estimated based on standard deviations and average threshold voltages of the first and the second threshold voltage distributions and probability density functions corresponding to the first and the second threshold voltage distributions, respectively. The memory controller may be structured and operable to calculate the standard deviation of the first threshold voltage distribution, based on a first probability area distinguished by a first target read voltage, a second probability area distinguished by a second target read voltage, and inverse Q-function values corresponding to the first and the second probability areas.

Abstract: Provided are an organic electric element comprising as a phosphorescent host material, a mixture of the compounds of Formula (1) and Formula (2), and an organic electronic device or apparatus thereof for achieving a high luminous efficiency, a low driving voltage, and an improved lifespan.

Abstract: Disclosed herein is a wireless microphone system including a multifunctional Bluetooth microphone with a touch screen and a two-channel UHF (Ultra high frequency) Bluetooth microphone receiver receives a voice signal by performing a short-distance communication with the multifunctional Bluetooth microphone with a touch screen to transmit the voice signal to a third device for playback.