Abstract: It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 ?m and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 ? or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

Abstract: The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.