Abstract: The present invention provides apparatus and a method for determining the occurrence of a QRS complex in ECG data. According to an aspect of the present invention, an apparatus is proposed for determining the occurrence of a QRS complex in ECG data by utilizing a first, second and third set of ECG data that are acquired by respectively electrode leads II, V4 and V5 and by determining whether a QRS complex has been detected within the predefined temporal window in at least two of the first, second and third sets of ECG data. According to another aspect of the present invention, an apparatus is proposed for determining the occurrence of a QRS complex in ECG data by utilizing three sets of ECG data whose signal quality values V are the smallest three of the first to twelfth sets of ECG data that are acquired by respectively the standard 12 electrode leads and by determining whether a QRS complex has been detected within the predefined temporal window in at least two of the three sets of ECG data.

Abstract: A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a nano-scale semiconductor structure.

Abstract: A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure is a nano-scale semiconductor structure.

Abstract: A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and an n-type carbon nanotube thin film transistor stacked on one another. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: The present invention provides apparatus and a method for determining the occurrence of a QRS complex in ECG data. According to an aspect of the present invention, an apparatus is proposed for determining the occurrence of a QRS complex in ECG data by utilizing a first, second and third set of ECG data that are acquired by respectively electrode leads II, V4 and V5 and by determining whether a QRS complex has been detected within the predefined temporal window in at least two of the first, second and third sets of ECG data. According to another aspect of the present invention, an apparatus is proposed for determining the occurrence of a QRS complex in ECG data by utilizing three sets of ECG data whose signal quality values V are the smallest three of the first to twelfth sets of ECG data that are acquired by respectively the standard 12 electrode leads and by determining whether a QRS complex has been detected within the predefined temporal window in at least two of the three sets of ECG data.

Abstract: The present disclosure provides methods and apparatuses for predicting road conditions based on big data. One exemplary method comprises: collecting driving data associated with a road section; comparing the collected driving data with a normal observation sample to determine whether the driving data is abnormal data, putting the abnormal data and the road section into an abnormality database in response to the driving data being abnormal data, and continuously recording driving data of this road section; determining whether the road section is an abnormal road section according to the number of occurrences of abnormal data associated with the road section; and predicting a reason for the abnormality of the road section determined as the abnormal road section, according to a preset model. The technical solutions provided by the present disclosure can help accurately predict road conditions by analyzing big data, thereby saving manpower and material resources.

Abstract: A system includes a database that stores information associated with a medication located in a base station. The information includes an indication of whether a container of the medication was returned to the base station subsequent to the medication being administered. A control module communicates with the base station, determines when the medication is retrieved from the base station, determines whether the container of the medication is returned to the base station, and updates the information stored in the database when the container of the medication is returned to the base station.

Abstract: There provides an apparatus for recognizing a head region in a CT lateral image of a subject, comprising: a deriving unit for deriving a first image representing a bone of the subject from the CT lateral image; an extracting unit for extracting a boundary curve indicating an outer contour of a region comprising at least part of the occipital bone and at least part of the cervical vertebra of the subject in the first image; and a determining unit for determining a first pixel position indicating a bottommost point of the head region of the subject, based on a shape feature parameter of the boundary curve.

Abstract: The present invention provides apparatus and methods for determining the occurrence of a QRS complex in ECG data. According to an aspect of the present invention, an apparatus is proposed for determining the occurrence of a QRS complex in ECG data by utilizing a first, second and third set of ECG data that are acquired by respectively electrode leads II, V4 and V5 and by determining whether a QRS complex has been detected within the predefined temporal window in at least two of the first, second and third sets of ECG data. According to another aspect of the present invention, an apparatus is proposed for determining the occurrence of a QRS complex in ECG data by utilizing three sets of ECG data whose signal quality values V are the smallest three of the first to twelfth sets of ECG data that are acquired by respectively the standard 12 electrode leads and by determining whether a QRS complex has been detected within the predefined temporal window in at least two of the three sets of ECG data.

Abstract: A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and an n-type carbon nanotube thin film transistor stacked on one another. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure is a nano-scale semiconductor structure.

Abstract: A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.