Abstract: An optical voltage source and decoupling device is provided, wherein the optical voltage source has a number N of series-connected semiconductor diodes, each having a p-n junction, the semiconductor diodes are monolithically integrated and together form a first stack with an upper side and an underside, and the number N of the semiconductor diodes of the first stack is greater than or equal to two, the decoupling device has a further semiconductor diode. The further semiconductor diode has a pin junction and, the further semiconductor diode is anti-serially connected with the semiconductor diodes of the first stack. An underside of the further semiconductor diode is materially connected with the upper side of the first stack and the further semiconductor diode forms a total stack together with the first stack.

Abstract: A device for interior illumination for a vehicle includes an array formed by multiple light sources, with which an ambient illumination and a reading illumination can be generated inside the vehicle, an additional lamp unit with which exclusively an ambient illumination can be generated inside the vehicle, and a control unit for controlling the light sources and the additional lamp unit in three modes. The control unit is designed and configured in such a way that in the first mode the light sources are controlled in such a way that exclusively a reading illumination is generated inside the vehicle; in the second mode the light sources and the additional lamp unit are controlled in such a way that exclusively an ambient illumination is generated inside the vehicle; and in the third mode the control unit simultaneously activates the first and second modes for simultaneously generating an ambient illumination and a reading illumination.

Abstract: A receiver component having a number of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that the number of partial voltage sources generate a source voltage, and each of the partial voltage sources has a semiconductor diode with a p-n junction, and the semiconductor diode has a p-doped absorption layer. The p absorption layer is passivated by a p-doped passivation layer with a larger band gap than the band gap of the p absorption layer, and the semiconductor diode has an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than the band gap of the n absorption layer. The partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another, and a tunnel diode is formed between each sequential pair of partial voltage sources.

Abstract: A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.

Abstract: Methods, apparatuses, and a computer program product allow additional features of a software package to be enabled by downloading and activating a corresponding license. More particularly, the methods, apparatuses and computer program product enable a network element, such as transmission equipment of an operator, to request a corresponding license from a server, such as a device management server of a communications provider, via a remote connection, even after a transition period in which all of the software features corresponding to a software package were provided to the operator. The transmission equipment can transmit a request for the corresponding license(s) to the device management server at a time later than the transition period, so that a remote management deadlock situation does not occur.

Abstract: An optical voltage source and decoupling device is provided, wherein the optical voltage source has a number N of series-connected semiconductor diodes, each having a p-n junction, the semiconductor diodes are monolithically integrated and together form a first stack with an upper side and an underside, and the number N of the semiconductor diodes of the first stack is greater than or equal to two, the decoupling device has a further semiconductor diode. The further semiconductor diode has a pin junction and, the further semiconductor diode is anti-serially connected with the semiconductor diodes of the first stack. An underside of the further semiconductor diode is materially connected with the upper side of the first stack and the further semiconductor diode forms a total stack together with the first stack.

Abstract: A device for interior illumination for a vehicle includes an array formed by multiple light sources, with which an ambient illumination and a reading illumination can be generated inside the vehicle, an additional lamp unit with which exclusively an ambient illumination can be generated inside the vehicle, and a control unit for controlling the light sources and the additional lamp unit in three modes. The control unit is designed and configured in such a way that in the first mode the light sources are controlled in such a way that exclusively a reading illumination is generated inside the vehicle; in the second mode the light sources and the additional lamp unit are controlled in such a way that exclusively an ambient illumination is generated inside the vehicle; and in the third mode the control unit simultaneously activates the first and second modes for simultaneously generating an ambient illumination and a reading illumination.

Abstract: A method for feedback of a temperature setting of an air-conditioning device involves adjusting a light color of at least one lighting element for the display of a set temperature. The adjusted light color corresponds to a temperature setting of an airflow zone in a motor vehicle.

Abstract: A device for controlling an interior lighting system of a vehicle to produce ambient lighting and/or reading lighting involves the interior lighting system having an array of a plurality of light sources. The device includes a control unit, by means of which the light sources of the array can be individually controlled in order to produce the ambient lighting and/or the reading lighting, and an input unit that can be connected to the control unit. The input unit has a touch-sensitive screen for inputting a current set of control information for the control unit. The control unit controls the light sources on the basis of the current set of control information. Furthermore, the input unit, on the basis of the current set of control information, displays associated ambient lighting and/or reading lighting for an illuminable region in the vehicle interior on the screen.

Abstract: A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.

Abstract: An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for generating infrared radiation, an upper cladding layer, a current distribution layer and an upper contact layer. The layers being preferably disposed in the specified order. A first tunnel diode is disposed between the upper cladding layer and the current distribution layer, and the current distribution layer predominantly including an n-doped, Ga-containing layer having a Ga content>1%.

Abstract: An optocoupler having a transmitter unit and a receiver unit being electrically isolated from each other and optically coupled with each other and integrated into a shared housing. The receiver unit includes an energy source that has a first electrical contact and a second electrical contact. The transmitter unit includes at least one first transmitter diode having a first optical wavelength and a second transmitter diode having a second optical wavelength. The first optical wavelength differing from the second optical wavelength by a difference wavelength, and the energy source of the receiving unit including two partial sources. The energy source being designed as a current source or as a voltage source, and the first partial source including a first semiconductor diode, and the second partial source including a second semiconductor diode. Each partial source having multiple semiconductor layers for each partial source being arranged in the shape of a stack.

Abstract: A receiver component having a number of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that the number of partial voltage sources generate a source voltage, and each of the partial voltage sources has a semiconductor diode with a p-n junction, and the semiconductor diode has a p-doped absorption layer. The p absorption layer is passivated by a p-doped passivation layer with a larger band gap than the band gap of the p absorption layer, and the semiconductor diode has an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than the band gap of the n absorption layer. The partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another, and a tunnel diode is formed between each sequential pair of partial voltage sources.

Abstract: A light emitting diode with a stacked structure, having a first region and a second region, wherein both regions comprise the following layers in the stated order, a carrier layer and an n-doped lower cladding layer and an electromagnetic radiation-generating active layer. The active layer comprises a quantum well structure and a p-doped upper cladding layer, and the first region additionally comprises a tunnel diode formed on the upper cladding layer from a p+-layer and an n+-layer, and an n-doped current distribution layer, wherein the current distribution layer and the n-doped contact layer are covered with a conductor track layer structure. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode and the current distribution layer are monolithic. The second region has a contact hole with a bottom region, an injection barrier being formed in the bottom region of the contact hole.

Abstract: A light-emitting diode having a stack-like structure, whereby the stack-like structure comprises a substrate layer and a mirror layer and an n-doped bottom cladding layer and an active layer, producing electromagnetic radiation, and a p-doped top cladding layer and an n-doped current spreading layer, and the aforementioned layers are arranged in the indicated sequence. The active layer comprises a quantum well structure. A tunnel diode is situated between the top cladding layer and the current spreading layer, whereby the current spreading layer is formed predominantly of an n-doped Ga-containing layer, having a Ga content >1%.

Abstract: A light emitting diode with a stacked structure, having a first region and a second region, wherein both regions comprise the following layers in the stated order, a carrier layer and an n-doped lower cladding layer and an electromagnetic radiation-generating active layer. The active layer comprises a quantum well structure and a p-doped upper cladding layer, and the first region additionally comprises a tunnel diode formed on the upper cladding layer from a p+-layer and an n+-layer, and an n-doped current distribution layer, wherein the current distribution layer and the n-doped contact layer are covered with a conductor track layer structure. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode and the current distribution layer are monolithic. The second region has a contact hole with a bottom region, an injection barrier being formed in the bottom region of the contact hole.

Abstract: An optical receiver component, wherein the receiver component comprises a first type of partial-voltage source with a first absorption edge and a second type of partial-voltage source with a second absorption edge, and the first absorption edge lies at a higher energy than the second absorption edge. Each partial-voltage source produces a partial voltage, provided a photon flux at a specific wavelength strikes the partial-voltage source, and the two partial-voltage sources are connected in series. A first number of series-connected sub-partial-voltage sources of the first type and a second number of series-connected sub-partial-voltage sources of the second type are provided. The first number and/or the second number are greater than one, and the respective deviation of the source voltages of the sub-partial-voltage sources among themselves is less than 20% in both types. Each sub-partial-voltage source comprises a semiconductor diode with a p-n junction.

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.

Abstract: An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for generating infrared radiation, an upper cladding layer, a current distribution layer and an upper contact layer. The layers being preferably disposed in the specified order. A first tunnel diode is disposed between the upper cladding layer and the current distribution layer, and the current distribution layer predominantly including an n-doped, Ga-containing layer having a Ga content>1%.

Abstract: A stacked semiconductor structure having a number of semiconductor diodes connected to one another in series, wherein each semiconductor diode has a p-n junction, and a tunnel diode is formed between sequential pairs of semiconductor diodes. The semiconductor diodes and the tunnel diodes jointly form a stack with a top and a bottom, and the number of semiconductor diodes is greater than or equal to two. When the stack is illuminated with light, at 300 K the stack has a source voltage of greater than 2 volts, and from the top of the stack to the bottom, a total thickness of the p and n absorption layers of a semiconductor diode increases from the topmost to the bottommost diode. The semiconductor diodes have substantially the same band gap, and the stack is formed on a substrate.