Abstract: An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are integrated in a common housing. The receiver module has a voltage source that has a number N of partial voltage sources mutually connected in series and constructed as semiconductor diodes. Each of the partial voltage sources has a semiconductor diode having a p-n junction, and the partial source voltages of the individual partial voltage sources each deviate by less than 20% from one another. Between each two successive partial voltage sources, a tunnel diode is formed and the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack having a top surface and a bottom surface, and the number N of the partial voltage sources is greater than or equal to three.

Abstract: A light-emitting diode having a stack-like structure, whereby the stack-like structure comprises a substrate layer and a mirror layer and an n-doped bottom cladding layer and an active layer, producing electromagnetic radiation, and a p-doped top cladding layer and an n-doped current spreading layer, and the aforementioned layers are arranged in the indicated sequence. The active layer comprises a quantum well structure. A tunnel diode is situated between the top cladding layer and the current spreading layer, whereby the current spreading layer is formed predominantly of an n-doped Ga-containing layer, having a Ga content >1%.

Abstract: A scalable voltage source having a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, wherein each of the partial voltage sources has a semiconductor diode with a p-n junction. A tunnel diode is formed between sequential pairs of partial voltage sources, wherein the tunnel diode has multiple semiconductor layers with a larger band gap than the band gap of the p/n absorption layers and the semiconductor layers with the larger band gap are each made of a material with modified stoichiometry and/or a different elemental composition than the p/n absorption layers of the semiconductor diode. The partial voltage sources and the tunnel diodes are monolithically integrated together, and jointly form a first stack with a top and a bottom, and the number N of partial voltage sources is greater than or equal to two.

Abstract: A semifinished product of a multi-junction solar cell includes a first semiconductor body that is designed as a first partial solar cell and has a first band gap, a second semiconductor body that is designed as a second partial solar cell and has a second band gap. The first semiconductor body and the second semiconductor body form a bonded connection to a tunnel diode and the first band gap is different from the second band gap. A first substrate material is adapted as a substrate layer, wherein a sacrificial layer is formed between the first substrate material and the first partial solar cell and the first substrate material is removed from the first semiconductor body, the sacrificial layer being destroyed in the process.

Abstract: A scalable voltage source having a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, wherein each of the partial voltage sources has a semiconductor diode with a p-n junction. A tunnel diode is formed between sequential pairs of partial voltage sources, wherein the tunnel diode has multiple semiconductor layers with a larger band gap than the band gap of the p/n absorption layers and the semiconductor layers with the larger band gap are each made of a material with modified stoichiometry and/or a different elemental composition than the p/n absorption layers of the semiconductor diode. The partial voltage sources and the tunnel diodes are monolithically integrated together, and jointly form a first stack with a top and a bottom, and the number N of partial voltage sources is greater than or equal to two.

Abstract: An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are integrated in a common housing. The receiver module has a voltage source that has a number N of partial voltage sources mutually connected in series and constructed as semiconductor diodes. Each of the partial voltage sources has a semiconductor diode having a p-n junction, and the partial source voltages of the individual partial voltage sources each deviate by less than 20% from one another. Between each two successive partial voltage sources, a tunnel diode is formed and the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack having a top surface and a bottom surface, and the number N of the partial voltage sources is greater than or equal to three.

Abstract: A scalable voltage source having a number N of mutually series-connected partial voltage sources designed as semiconductor diodes, wherein each of the partial voltage sources comprises a p-n junction of a semiconductor diode, and each semiconductor diode has a p-doped absorption layer, wherein the p-absorption layer is passivated by a p-doped passivation layer with a wider band gap than the band gap of the p-absorption layer and the semiconductor diode has an n-absorption layer, wherein the n-absorption layer is passivated by an n-doped passivation layer with a wider band gap than the band gap of the n-absorption layer, and the partial source voltages of the individual partial voltage sources deviate by less than 20%, and between in each case two successive partial voltage sources, a tunnel diode is arranged.

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.

Abstract: A device having a multi-junction solar cell and a protection diode structure, whereby the multi-junction solar cell and the protection diode structure have a common rear surface and front sides separated by a mesa trench. The common rear surface comprises an electrically conductive layer, and the light enters through the front side into the multi-junction solar cell. The cell includes a stack of a plurality of solar cells, and has a top cell, placed closest to the front side, and a bottom solar cell, placed closest to the rear side, and a tunnel diode is placed between adjacent solar cells. The number of semiconductor layers in the protection diode structure is smaller than the number of semiconductor layers in the multi-junction solar cell. The sequence of the semiconductor layers in the protection diode structure corresponds to the sequence of semiconductor layers of the multi-junction solar cell.

Abstract: A solar cell stack, having a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, and a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 ? smaller than the second lattice constant, and a metamorphic buffer, the metamorphic buffer being formed between the first semiconductor solar cell and the second semiconductor solar cell, and the metamorphic buffer including a series of three layers, and the lattice constant increasing in a series in the direction of the semiconductor solar cell, and the lattice constants of the layers of the metamorphic buffer being bigger than the first lattice constant, two layers of the buffer having a doping, and the difference in the dopant concentration between the two layers being greater than 4E17 cm?3.

Abstract: An LED semiconductor component having an n-doped substrate layer and a first, n-doped cladding layer, wherein the cladding layer is located on the substrate layer, and having an active layer, wherein the active layer comprises a light-emitting layer and is located on the first cladding layer, and having a second, p-doped cladding layer, wherein the second cladding layer is located on the active layer, and having a p-doped current spreading layer, wherein the current spreading layer is located on the second cladding layer, and having a p-doped contact layer, wherein the p-doped contact layer is located on the current spreading layer, wherein the p-doped contact layer is made of an aluminiferous layer and has carbon as dopant.

Abstract: An LED semiconductor component having an n-doped substrate layer and a first, n-doped cladding layer, wherein the cladding layer is located on the substrate layer, and having an active layer, wherein the active layer comprises a light-emitting layer and is located on the first cladding layer, and having a second, p-doped cladding layer, wherein the second cladding layer is located on the active layer, and having a p-doped current spreading layer, wherein the current spreading layer is located on the second cladding layer, and having a p-doped contact layer, wherein the p-doped contact layer is located on the current spreading layer, wherein the p-doped contact layer is made of an aluminiferous layer and has carbon as dopant.

Abstract: A semifinished product of a multi-junction solar cell includes a first semiconductor body that is designed as a first partial solar cell and has a first band gap, a second semiconductor body that is designed as a second partial solar cell and has a second band gap. The first semiconductor body and the second semiconductor body form a bonded connection to a tunnel diode and the first band gap is different from the second band gap. A first substrate material is adapted as a substrate layer, wherein a sacrificial layer is formed between the first substrate material and the first partial solar cell and the first substrate material is removed from the first semiconductor body, the sacrificial layer being destroyed in the process.

Abstract: Methods, apparatuses, and a computer program product allow additional features of a software package to be enabled by downloading and activating a corresponding license. More particularly, the methods, apparatuses and computer program product enable a network element, such as transmission equipment of an operator, to request a corresponding license from a server, such as a device management server of a communications provider, via a remote connection, even after a transition period in which all of the software features corresponding to a software package were provided to the operator. The transmission equipment can transmit a request for the corresponding license(s) to the device management server at a time later than the transition period, so that a remote management deadlock situation does not occur.

Abstract: This invention relates to a method for indicating a status of a configuring of a network element, said method includes checking (300, 301) if all configurations of a pre-defined set of configurations for said network element (3, 3a) have been conducted. The pre-defined set of configurations is smaller than a set of configurations that comprises all possible configurations for said network element (3, 3a). The method also indicates (302) an incomplete configuring of said network element (3) when said checking (300, 301) reveals that not all configurations of said pre-defined set of configurations have been conducted. The invention further relates to a computer program, a computer program product, a device, a network element, and a system.

Abstract: An operating method uses at least one element having at least one license protected system feature, a management tool, a management agent, and a license management element. The method includes a configuration procedure and a license deployment procedure. The configuration procedure includes sending commands for the configuration of the license protected system feature from the management tool to the management agent, and executing the configuration of the license protected system feature by the management agent. The license deployment procedure includes sending command for the download of the license from the management tool to the management agent and downloading it correspondingly. The license protected system feature is enabled only if both the configuration procedure and the license deployment procedure have been duly executed.