Abstract: Redistributed Chip Packaging with Thermal Contact to Device Backside An integrated circuit assembly includes a panel including an semiconductor device at least partially surrounded by an encapsulant. A panel upper surface and a device active surface are substantially coplanar. The assembly further includes one or more interconnect layers overlying the panel upper surface. Each of the interconnect layers includes an insulating film having contacts formed therein an interconnect metallization formed thereon. A lower surface of the panel is substantially coplanar with either a backside of the device or a lower surface of a thermally and electrically conductive slab that has an upper surface in thermal contact with the device backside. The assembly may also include a set of panel vias.

Abstract: An electronic component includes a substrate (210, 1510), a device (221, 222) supported by the substrate and including a first bond pad (223, 224, 225, 226), and a cap (231, 232, 631, 731, 732, 1531, 1532) overlying the substrate. The cap includes a second bond pad (241, 242, 243, 244) at an outside surface of the cap, a third bond pad (245, 246, 247, 248) at an inside surface of the cap and electrically coupled to the first bond pad, and an electrically conductive via (251, 252, 254, 751, 752, 753, 754) extending through the cap and electrically coupling together the second and third bond pads.

Abstract: A thermal fuse, preferably for a high-temperature battery, comprising leads and a body therebetween having a melting point between approximately 400.degree. C. and 500.degree. C. The body is preferably an alloy of Ag--Mg, Ag--Sb, Al--Ge, Au--In, Bi--Te, Cd--Sb, Cu--Mg, In--Sb, Mg--Pb, Pb--Pd, Sb--Zn, Sn--Te, or Mg--Al.

Abstract: An apparatus and process for jetting molten solder in the form of balls directly onto all the metallized interconnects lands for a ball grid array package in one step with no solder paste required. Molten solder is jetted out of a grid of holes using a piston attached to a piezoelectric crystal. When voltage is applied to the crystal it expands forcing the piston to extrude a desired volume of solder through holes in the aperture plate. When the voltage is decreased the piston reverses motion creating an instability in the molten solder at the aperture plate surface and thereby forming spherical solder balls that fall onto a metallized substrate. The molten solder balls land on the substrate and form a metallurgical bond with the metallized lands. The size of the solder balls is determined by a combination of the size of the holes in the aperture plate, the duration of the piston pulse, and the displacement of the piston. The layout of the balls is dictated by the location of the hooks in the grid.

Abstract: A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries.