Abstract: An interspinous process spacer is generally rectangular and may have an upper face that generally opposes a lower face, front and back sides that generally oppose each other, an end side, and a nose that generally opposes the end side. The spacer preferably has rounded edges between the upper face and the front, end, and back sides and between the lower face and the front, end, and back sides. The nose of the spacer is preferably asymmetrical and tapers integrally, distally, and inwardly from the first and second faces to form a generally pointed or rounded distal tip. A spacer may be inserted laterally into the interspinous space through a small, posterior midline incision, allowing the preservation of the supraspinous ligament. One or more spacers may be placed between spinous processes of adjacent vertebrae, and result in distraction of the spinous processes which may limit extension of the spine.

Abstract: Example implementations are directed to a system that can be used to monitor the state of an occupant of a structure, such as a bed or a mattress. The states that can be monitored include whether or not the occupant is present, the position of the occupant, entry or exit of the occupant, and other signs that can be detected via movement, such as activity level, breathing, epileptic seizures, and heart rate. Example implementations involve one or more accelerometers disposed on the structure, such that the movement or changes in position by the occupant is transferred to the accelerometers, and a computing system to process the data from the accelerometers.

Abstract: In a method of notifying a user of an option to participate in a meta game, a presence of a player of a computer-implemented game at a location is detected. An association between a computer-implemented meta-game and the location is identified. The player of the computer-implemented game is presented with an option to participate in the computer-implemented meta-game. An indication of an acceptance of the option to participate in the computer-implemented meta game is received from the player of the computer-implemented game. A performance of an action within the computer-implemented game by the player of the computer-implemented game is reflected within the computer-implemented meta game.

Abstract: A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.

Abstract: A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

Abstract: Material layer structures that have high mobility, a high conduction band barrier and materials that can be implanted to enable higher performance FET device. The structures contain a quantum well layer disposed between two barriers and disposed above a buffer layer and a substrate.

Abstract: Facet fusion implants with various body geometries are provided. The bodies of the facet fusion implants can be configured to minimize migration of the implants when the implants are inserted into facet joints. Surgical methods and accompanying surgical instrumentation for inserting the facet fusion implants into facet joints are provided.

Abstract: Intervertebral implant system for intervertebral implantation, are disclosed. An intervertebral implant system according to the present disclosure includes a frame having a peripheral wall defining a space therein, and a settable material introducible into the space of the frame. The settable material is a biocompatible load bearing material including and not limited to bone, composites, polymers of bone growth material, collagen, and insoluble collagen derivatives. The settable material is injectable into the space defined by the frame. The settable material may have an initial fluid condition wherein the fluid settable material cures to a hardened condition.

Abstract: A plurality of differently configured bone spinal implants for insertion in a spine have a cylindrical bore for receiving an insertion head stud. A plurality of instruments are disclosed each of which have a first connection element which is either a male or female member such as e.g., a ball and socket, a cylinder and socket and so on for forming either a stationary or articulating interchangeable joint for a plurality of disc processing heads or implant insertion heads. The plurality of disc space processing heads or implant insertion heads have a complementary second joint member for interchangeable attachment to the first connection element. The implant insertion heads or disc processing heads have different configurations for different shaped implants.

Abstract: A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.

Abstract: A chisel with U.V-shaped, saw tooth or other shaped opposing blades is used to form channels in adjacent vertebrae. The chisel has a projection extending from at least one of the top and bottom surfaces to limit depth of penetration into the vertebrae. A guide member may be attached to the forward tip of the chisel to guide the chisel into the disc space to uniformly chisel both adjacent vertebrae simultaneously to form a channel in the vertebrae. The so formed channels serve as sa guide for a second chisel having no guide member. The second chisel, which may be a box chisel, is used to complete the channels to the desired depth to receive an associated implant, typically of cortical bone. Other embodiments are disclosed in which a two step box chisel has a retractable guide member for initially guiding the chisel as it forms partial channels in the vertebrae disc space. The guide member is then retracted and the channels formed to the desired depth.

Abstract: An allograft interspinous spacer for implantation into an interspinous space located between spinous process of adjacent vertebrae. The spacer preferably includes a body, a core and a plurality of deployable retainers. The body may be operatively associated with the plurality of deployable retainers. In use, after the body has been inserted into the interspinous space, the plurality of retainers is deployed so that they prevent migration of the spacer. The core is preferably sized and configured to be inserted and/or moved into operatively engagement with the body to deploy the plurality of retainers.

Abstract: A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

Abstract: The present invention is directed to an inflated interspinous spacer. The interspinous spacer is inserted into the interspinous space between adjacent spinous process in a deflated or unexpanded state, and is inflated or expanded with an injectable filler material. Upon inflation, the spacer preferably distracts the spinous processes and assumes a shape that retains the spacer in position and preferably mechanically locks with the spinous processes. The spacer includes two separate balloons configured to have different compressive modulus so that one balloon is softer and more deformable than the other balloon.

Abstract: A bone fastener for stabilizing bone fragments includes a single or multiple components coupleable with one another and displaceable to a locked position of the bone fastener.

Abstract: A bone fastener for stabilizing bone fragments includes a single or multiple components coupleable with one another and displaceable to a locked position of the bone fastener.

Abstract: A trial implant assembly is provided that includes a threaded shaft having exterior threading adjacent a distal end and a trial implant that includes a trial base having an interiorly threaded through hole couplable to the distal end of the shaft and a trial head having a superior endplate and an inferior endplate and a support connecting the superior endplate to the inferior endplate. A variety of visualization windows are provided through the trial implant as well as a variety of mechanically adjustable stops to prevent over insertion of the trial head within the intervertebral disc space.

Abstract: A fuel cell system that employs a diode electrically coupled between bipolar plates in a fuel cell of a fuel cell stack for preventing the fuel cell between the plates from reversing its polarity. The diode is a thin-sheet p-n diode including doped semiconductor layers and has a thickness relative to the thickness of the MEA in the fuel cell so that the overall stack thickness does not increase. When the fuel cell is operating properly the diode does not conduct and all of the current through the fuel cell goes through the MEA. If the electric load on the stack increases to a level beyond the capability of the fuel cell, where the potential across the fuel cell goes significantly below zero, the diode will begin to conduct so that any current that cannot travel through the MEA with the cell voltage less than one negative forward diode voltage drop is able to go around the MEA through the diode.

Abstract: An interspinous process spacer is generally rectangular and may have an upper face that generally opposes a lower face, front and back sides that generally oppose each other, an end side, and a nose that generally opposes the end side. The spacer preferably has rounded edges between the upper face and the front, end, and back sides and between the lower face and the front, end, and back sides. The nose of the spacer is preferably asymmetrical and tapers integrally, distally, and inwardly from the first and second faces to form a generally pointed or rounded distal tip. A spacer may be inserted laterally into the interspinous space through a small, posterior midline incision, allowing the preservation of the supraspinous ligament. One or more spacers may be placed between spinous processes of adjacent vertebrae, and result in distraction of the spinous processes which may limit extension of the spine.