Abstract: A flowmeter is provided that comprises a leadframe assembly (140) and a body (144) disposed at least partially around the leadframe assembly (140). The body (144) has a flow passage therethrough that comprises a first channel (178) having a first port (166), a second channel (180) having a second port (168), and a flow altering element (182) disposed within the second channel (180). First and second pressure sensors (174 and 176) are disposed within the body (144) and coupled to the leadframe assembly (140) for measuring a first pressure within the first channel (178) and a second pressure within the second channel (180), respectively. An integrated circuit (155), which is coupled to the leadframe assembly (140), to the first pressure sensor (174), and to the second pressure sensor (176), is configured to determine the rate of flow through the flow passage from the first pressure and the second pressure.

Abstract: A transducer package 20 includes a substrate 32 having a first axis of symmetry 36 and a second axis of symmetry 38 arranged orthogonal to the first axis of symmetry 36. At least a first sensor 50 and a second sensor 52 each of which are symmetrically arranged on the substrate 32 relative to one of the first and second axes of symmetry 36 and 38. The first and second sensors 50 and 52 are adapted to detect movement parallel to the other of the first and second axes of symmetry 36 and 38. The first sensor 50 is adapted to detect movement over a first sensing range and the second sensor 52 is adapted to detect movement over a second sensing range, the second sensing range differing from the first sensing range.

Abstract: A flowmeter is provided that comprises a leadframe assembly (140) and a body (144) disposed at least partially around the leadframe assembly (140). The body (144) has a flow passage therethrough that comprises a first channel (178) having a first port (166), a second channel (180) having a second port (168), and a flow altering element (182) disposed within the second channel (180). First and second pressure sensors (174 and 176) are disposed within the body (144) and coupled to the leadframe assembly (140) for measuring a first pressure within the first channel (178) and a second pressure within the second channel (180), respectively. An integrated circuit (155), which is coupled to the leadframe assembly (140), to the first pressure sensor (174), and to the second pressure sensor (176), is configured to determine the rate of flow through the flow passage from the first pressure and the second pressure.

Abstract: A structure that reduces signal cross-talk through the semiconductor substrate for System-On-Chip (SOC) (2) applications, thereby facilitating the integration of digital circuit blocks (6) and analog circuit blocks (8) onto a single IC. Cross-circuit interaction through a substrate (4) is reduced by strategically positioning the various digital circuit blocks (6) and analog circuit blocks (8) in an isolated wells (10), (12), (16) and (20) over a resistive substrate (4). These well structures (10), (12), (16), and (20) are then surrounded with a patterned low resistivity layer (22) and optional trench region (24). The patterned low resistivity region (22) is formed below wells (10) and (12) and functions as a low resistance AC ground plane. This low resistivity region (22) collects noise signals that propagate between digital circuit blocks (6) and analog circuit blocks (8).

Abstract: A method for creating a MEMS structure is provided. In accordance with the method, a substrate (53) is provided having a sacrificial layer (55) disposed thereon and having a layer of silicon (57) disposed over the sacrificial layer. A first trench (59) is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region (61) enclosed by the first trench and a second region (63) exterior to the first trench. A first material (65) is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench (71) is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer.

Abstract: A component includes a housing (110, 1110) at least partially defining a cavity (125, 1125), a sensor element (105) located in the cavity, and a support member (340, 1140) located over the cavity, located over at least a portion of the housing, and having a hole (341, 1141) over the cavity. The component also includes a filter (345, 700, 800, 1045) located over the support member and located over the hole in the support member.

Abstract: A structure that reduces signal cross-talk through the semiconductor substrate for System-On-Chip (SOC) (2) applications, thereby facilitating the integration of digital circuit blocks (6) and analog circuit blocks (8) onto a single IC. Cross-circuit interaction through a substrate (4) is reduced by strategically positioning the various digital circuit blocks (6) and analog circuit blocks (8) in an isolated wells (10), (12), (16) and (20) over a resistive substrate (4). These well structures (10), (12), (16), and (20) are then surrounded with a patterned low resistivity layer (22) and optional trench region (24). The patterned low resistivity region (22) is formed below wells (10) and (12) and functions as a low resistance AC ground plane. This low resistivity region (22) collects noise signals that propagate between digital circuit blocks (6) and analog circuit blocks (8).

Abstract: A method for creating a MEMS structure is provided. In accordance with the method, a substrate (53) is provided having a sacrificial layer (55) disposed thereon and having a layer of silicon (57) disposed over the sacrificial layer. A first trench (59) is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region (61) enclosed by the first trench and a second region (63) exterior to the first trench. A first material (65) is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench (71) is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer.

Abstract: A method for processing data from dual sensor receivers to produce a combined seismic trace. A first seismic trace is received from a geophone and second seismic trance from a hydrophone in a dual sensor receiver. This first and second seismic traces are transformed into a first and second seismic spectrum. The seismic spectrums are deghosted to obtain deghosted spectrums. The seismic spectra may be added to obtain a deghosted third spectrum. An inverse power is computed for each of the deghosted spectra. The inverse powers for each deghosted spectra are divided by sums of the deghosted spectra to obtain diversity filters. The first and third diversity filters are applied to the first seismic spectrum to obtain a scaled first seismic spectrum. The other scaled spectra are formed in a like manner. The diversity scaled seismic spectrum is inversely transformed to obtain the combined seismic trace.

Abstract: A method for processing data from dual sensor receivers to produce a combined seismic trace. A first seismic trace is received from a geophone and second seismic trance from a hydrophone in a dual sensor receiver. This first and second seismic traces are transformed into a first and second seismic spectrum. The seismic spectrums are deghosted to obtain deghosted spectrums. The seismic spectra may be added to obtain a deghosted third spectrum. An inverse power is computed for each of the deghosted spectra. The inverse powers for each deghosted spectra are divided by sums of the deghosted spectra to obtain diversity filters. The first and third diversity filters are applied to the first seismic spectrum to obtain a scaled first seismic spectrum. The other scaled spectra are formed in a like manner. The diversity scaled seismic spectrum is inversely transformed to obtain the combined seismic trace.

Abstract: A component includes a housing (110, 1110) at least partially defining a cavity (125, 1125), a sensor element (105) located in the cavity, and a support member (340, 1140) located over the cavity, located over at least a portion of the housing, and having a hole (341, 1141) over the cavity. The component also includes a filter (345, 700, 800, 1045) located over the support member and located over the hole in the support member.

Abstract: A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11).

Abstract: A semiconductor component comprises a substrate (101), a two flexible pressure sensor diaphragms (106, 303) supported by the substrate (101), and a fixed electrode (203) between the two diaphragms (106, 303). The two diaphragms (106, 303) and the fixed electrode (203) are electrodes of two differential capacitors. The substrate (101) has a hole (601) extending from one surface (107) of the substrate (101) to an opposite surface (108) of the substrate (101). The hole (601) is located underneath the two diaphragms (106, 303), and the hole (601) at the opposite surfaces (107, 108) of the substrate (101) is preferably larger than the hole (601) at an interior portion of the substrate (101).

Abstract: A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11).

Abstract: Selective encapsulation of a micro electro-mechanical pressure sensor provides for protection of the wire bands (140) through encapsulation while permitting the pressure sensor diaphragm (121) to be exposed to ambient pressure without encumbrance or obstruction. Selective encapsulation is made possible by the construction of a protective dam (150) around the outer perimeter of a pressure sensor diaphragm (121) to form a wire bond cavity region between the protective dam (150) and the device housing (105). The wire bond cavity may be encapsulated with an encapsulation gel (160) or by a vent cap (170). Alternatively, the protective dam (150) may be formed by a glass frit pattern (152) bonding a cap wafer (151) to a device wafer (125) and then dicing the two-wafer combination into individual dies with protective dams attached.

Abstract: A physical sensor component includes a housing (110) having a cavity (112), a pressure sensor device (120) mounted in the cavity of the housing, and a chemically selective and physically selective filter (153) overlying the cavity of the housing and separated from the pressure sensor device.

Abstract: Disclosed is an optical component packaging assembly including a rectangular plastic box with an upper half and a lower half. In the lower half, a thermal plastic vacuum formed insert is positioned within the lower half. The lower insert has a recess. The recess has opposed convex ends and central finger recesses. The opposed convex ends prevent the end faces of the optical component from being brought into contact with the insert. The convex ends may be v-shaped or semi-circular. The finger recesses provide convenient access to the laser rod so that the person unpackaging the laser rod from the optical component packaging is most likely to engage the laser rod at a center portion thereof rather than grasping the laser rod at the end faces thereof, thereby inadvertently damaging the optical surfaces of the laser rod.

Abstract: A method of manufacturing a sensor includes forming a first electrode (120, 1120), forming a sacrificial layer (520) over the first electrode, and forming a layer (130) over the sacrificial layer where a second electrode (131, 831) is located in the layer. The method further includes removing the sacrificial layer after forming the layer to form a cavity (140) between the first and second electrodes and then sealing the cavity between the first and second electrodes. The layer is supported over the first electrode by a post (133, 833) in the cavity, and the second electrode is movable relative to the first electrode and is movable in response to a pressure external to the cavity.

Abstract: A method is disclosed for processing of dual sensor OBC data that corrects for angular incidence angle, corrects for estimated reflectivity, and combines the corrected sensor traces using an optimal diversity scaling technique. In one embodiment, the disclosed method takes seismic traces from a geophone and a hydrophone, corrects the geophone trace for the incidence angle, determines diversity filters for optimally combining the geophone and hydrophone traces, applies the diversity filters, estimates a reflectivity coefficient for the ocean bottom (potentially for different angles of reflection), scales the geophone data according to the reflectivity, and re-applies the diversity filters to obtain a combined trace. The combined trace is expected to have various artifacts eliminated, including ghosting and reverberation, and is expected to have an optimally determined signal-to-noise ratio.

Abstract: A semiconductor component comprises a substrate (101), a two flexible pressure sensor diaphragms (106, 303) supported by the substrate (101), and a fixed electrode (203) between the two diaphragms (106, 303). The two diaphragms (106, 303) and the fixed electrode (203) are electrodes of two differential capacitors. The substrate (101) has a hole (601) extending from one surface (107) of the substrate (101) to an opposite surface (108) of the substrate (101). The hole (601) is located underneath the two diaphragms (106, 303), and the hole (601) at the opposite surfaces (107, 108) of the substrate (101) is preferably larger than the hole (601) at an interior portion of the substrate (101).