Abstract: Integrated circuit access times are reduced by an input structure in which input signals are routed through a low resistance path from the input pad directly to the interior of the integrated circuit without using an input driver.

Abstract: A circuit improves the reliability of antifuses in certain types of systems by substantially eliminating the continuous undesirable applications of voltages across antifuse terminals. To accomplish this, an antifuse has applied across its two terminals a "reading" or "evaluation" voltage as required by the system operation for a single read or evaluation clock period (typically 5 ns to 30 ns in duration). The signal describing the state of the antifuse is then stored in a latch, register, or other suitable structure for subsequent sampling. In this manner, a low read current flows in the antifuse in response to the standard chip operating voltage for only a short period of time such as a single clock cycle. Thus, continuous voltages across the two terminals of the antifuse are avoided and an unprogrammed antifuse is not inadvertently programmed and a programmed antifuse is not inadvertently converted back to its high impedance state (i.e. "unprogrammed").

Abstract: An antifuse redundancy circuit operates with transparency to external circuitry and users. In one embodiment, an antifuse redundancy circuit incorporates two antifuses rather than one. The circuit is arranged so that both antifuses may be simultaneously programmed and read. If a single antifuse is programmed without programming the other antifuse, the antifuse redundancy circuit will register a programmed antifuse. Additionally, if a single programmed antifuse is unintentionally deprogrammed after both antifuses in the redundancy circuit have been programmed, the antifuse redundancy circuit will continue to register a programmed antifuse. The result is both an increase in manufacturing yield and an increase in the reliability of integrated circuits utilizing antifuses.

Abstract: A redundancy circuit for a semiconductor memory device utilizes a fuse ladder comprising alternating programmable resistive fuses and signal restorers connected to one another in series. The signal restorers coupled between the fuses prevent the formation of a high impedance resistive line with a floating node when one of the fuses in the ladder is blown.

Abstract: A redundancy circuit for a semiconductor memory device utilizes a fuse ladder comprising alternating programmable resistive fuses and signal restorers connected to one another in series. The signal restorers coupled between the fuses prevent the formation of a high impedance resistive line with a floating node when one of the fuses in the ladder is blown.

Abstract: A high resolution sense amplifier and method for sensing the state of antifuses in an integrated circuit is capable of correctly reading even a defectively programmed antifuse having a resistance of up to 20 K.OMEGA. as being programmed. The sense amplifier reads two antifuses at each programmable location, and correctly reads that location as being programmed if either or both of the antifuses at that location have been blown.

Abstract: A redundancy circuit for a semiconductor memory device utilizes a fuse ladder comprising alternating programmable resistive fuses and signal restorers connected to one another in series. The signal restorers coupled between the fuses prevent the formation of a high impedance resistive line with a floating node when one of the fuses in the ladder is blown.

Abstract: A sense amplifier for a static memory includes two pull-up transistors. The gate of each transistor is coupled to the drain of the other transistor. A circuitry is provided for precharging the drains of both pull-up transistors to a selected voltage such that by the start of the tracking stage of the amplifier, both pull-up transistors are off. If the tracking stage is long enough, one pull-up transistor turns on while the other one remains off, so that before the start of the sensing stage both pull-up transistors reach their final ON/OFF states. Hence the amplifier is fast and power efficient. The memory bit lines are precharged to VCC before the tracking stage, improving the read-disturb immunity and hence allowing a wider range of voltages on the bit lines and the sense amplifier inputs. The noise immunity and tolerance to temperature process variations are improved as a result. The high noise immunity make the amplifier and the memory suitable for integration with noisy circuits such as CPUs.

Abstract: A redundancy system for a random access memory circuit includes a plurality of groups, each having first and second multiplexers on opposite sides thereof, each group being made up of two squads each containing four columns. Pairs of columns from one group are interlaced with pairs of columns of the other group.

Abstract: An amplifier of the present invention is suitable for use as sense amplifier in memories. Some embodiments of the amplifier are simple, fast and consume little power. A memory using the amplifier is also provided.

Abstract: For enabling a static, random-access-memory (500) bit lines (556 and 558) pre-charging circuit (518), employed is an address-change-detection circuit (510) having a plurality of address-change-detectors (570 and 572) each for detecting a change in an associated SRAM addressing signal and, driven by the address-change detectors (570 and 572), a pulse generator (700) driving the pre-charging circuit (518).