Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and damping are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A first free magnetic layer is disposed above the dielectric layer. A second free magnetic layer is magnetically coupled with the first free magnetic layer.

Abstract: An insulating layer is deposited over a transistor structure. The transistor structure comprises a gate electrode over a device layer on a substrate. The transistor structure comprises a first contact region and a second contact region on the device layer at opposite sides of the gate electrode. A trench is formed in the first insulating layer over the first contact region. A metal-insulator phase transition material layer with a S-shaped IV characteristic is deposited in the trench or in the via of the metallization layer above on the source side.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.

Abstract: Thermal isolation in memory cells is described herein. A number of embodiments include a storage element, a selector device formed in series with the storage element, and an electrode between the storage element and the selector device, wherein the electrode comprises an electrode material having a thermal conductivity of less than 0.15 Watts per Kelvin-centimeter (W/K-cm).

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.

Abstract: Techniques, materials, and circuitry are disclosed which enable low-voltage, embedded memory applications. In one example embodiment, an embedded memory is configured with a bitcell having a memory element and a selector element serially connected between an intersection of a wordline and bitline. The selector element can be implemented, for instance, with any number of crystalline materials that exhibit an S-shaped current-voltage (IV) curve, or that otherwise enables a snapback in the selector voltage after the threshold criteria is exceeded. The snapback of the selector is effectively exploited to accommodate the ON-state voltage of the selector under a given maximum supply voltage, wherein without the snapback, the ON-state voltage would exceed that maximum supply voltage. In some example embodiments, the maximum supply voltage is less than 1 volt (e.g., 0.9 volts or less).

Abstract: A magnetic memory having memory elements each with two magnetic tunneling junction (MTJ) devices is disclosed. The devices in each element are differentially programmed with complementary data. The devices for each element are stacked one above the other so that the element requires no more substrate area than a single MTJ device.

Abstract: Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

Abstract: Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

Abstract: Spin transfer torque memory (STTM) devices incorporating a field plate for application of an electric field to reduce a critical current required for transfer torque induced magnetization switching. Embodiments utilize not only current-induced magnetic filed or spin transfer torque, but also electric field induced manipulation of magnetic dipole orientation to set states in a magnetic device element (e.g., to write to a memory element). An electric field generated by a voltage differential between an MTJ electrode and the field plate applies an electric field to a free magnetic layer of a magnetic tunneling junction (MTJ) to modulate one or more magnetic properties over at least a portion of the free magnetic layer.

Abstract: A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper surface and into the opening.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: Thermal isolation in memory cells is described herein. A number of embodiments include a storage element, a selector device formed in series with the storage element, and an electrode between the storage element and the selector device, wherein the electrode comprises an electrode material having a thermal conductivity of less than 0.15 Watts per Kelvin-centimeter (W/K-cm).

Abstract: Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer.