Abstract: An extended universal serial bus (USB) card reader device is described herein. In one embodiment, a card reader includes a first extended USB (EUSB) connector to be coupled to an external host system, multiple flash memory card sockets capable of receiving multiple flash memory cards inserted therein, multiple flash controllers coupled to the plurality of flash memory card sockets respectively. The card reader further includes a memory for storing executable code, a processor coupled to each of the flash controllers for executing the executable code to control each of the plurality of flash controllers in order to access the corresponding flash memory card inserted therein. The card reader further includes a second EUSB connector to be coupled to an external EUSB device using the extended USB protocols, which is one of an EUSB slave device and an EUSB hub device. Other methods and apparatuses are also described.

Abstract: High performance flash memory devices (FMD) are described. According to one exemplary embodiment of the invention, a high performance FMD includes an I/O interface, a FMD controller, and at least one non-volatile memory module along with corresponding at least one channel controller. The I/O interface is configured to connect the high performance FMD to a host computing device The FMD contoller is configured to control data transfer (e.g., data reading, data writing/programming, and data erasing) operations between the host computing device and the non-volatile memory module. The at least one non-volatile memory module, comprising one or more non-volatile memory chips, is configured as a secondary storage for the host computing device. The at least one channel controller is configured to ensure proper and efficient data transfer between a set of data buffers located in the FMD controller and the at least one non-volatile memory module.

Abstract: A high volume testing/formatting process is provided for Universal Serial Bus-based (USB-based) electronic data flash cards (USB devices) that meets the increasing demand for USB electronic data flash cards (USB devices). A test host is simultaneously coupled to the multiple USB devices (e.g., using a multi-port card reader or a probe fixture), a controller endpoint value is read from each of the USB devices and verified with a known good value, and then testing/formatting is performed on each of the USB devices by writing predetermined data into each USB device in a pipelined manner, then reading out and testing the predetermined data. In one embodiment, the test host implements a special USB driver that blocks standard USB registration procedures upon detecting the plurality of USB devices. Control and/or boot code data are written onto the flash memory device (i.e., instead of being provided on a controller ROM).

Abstract: A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The boot code includes an initial boot loader, boot code and a control program that are executed by the flash microcontroller, and an operating system OS image and an external-host control program that are executed by an external host. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A first-reset-read address from the external host is captured by the microcontroller during its boot sequence and stored in a mapping table along with a physical address of the block in the SRAM buffer with the operating system OS image and the external-host control program. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory.

Abstract: An extended Universal-Serial Bus (EUSB) host has reduced loading by using radio frequency (RF) transceivers or direct wiring traces rather than a pair of legacy USB cables. The reduced loading opens the eye pattern. The EUSB device transfers internal data using chained Direct-Memory Access (DMA). Registers in a DMA controller point to a vector table that has vector entries, each pointing to a destination and a source. The source is a memory table for a memory group. The memory table has entries for several memory segments. Each memory-table entry has a pointer to a memory segment and a byte count for the segment. Once all bytes in the segment are transferred, a flag in the entry indicates when another memory segment follows within the memory group. When an END flag is read, then vector table is advanced to the next vector entry, and another memory group of memory segments processed.

Abstract: A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The SRAM buffer also operates as a cache of flash data after booting is complete. Cache read and write hits use the SRAM cache rather than flash memory, while old cache lines and read misses access the flash memory. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory. The flash microcontroller uses a differential interface to the external host, with a differential transceiver and a differential serial interface. Frame, packet, and encoded clock processing is also performed by the serial interface.

Abstract: An electronic data flash card is accessible by a host system, and includes a flash memory controller and at least one flash memory device coupled to the flash controller. The boot code and control code for the flash memory system (flash card) are stored in the flash memory device during a programming procedure. The flash controller transfers the boot code and control code to a volatile main memory (e.g., random access memory or RAM) at start up or reset making a RAM-based memory system. Boot code and control code are selectively overwritten during a code updating operation. A single flash controller thus supports multiple brands and types of flash memory to eliminate stocking issues.

Abstract: An extended Secure-Digital (SD) card has a second interface that uses some of the SD-interface lines. A card-detection routine on a host can initially use the SD interface to detect extended capabilities and command the card to switch to using the second interface. The extended SD card can communicate with legacy SD hosts using just the SD interface, or extended SD cards using the second interface. Also an extended Universal-Serial Bus (EUSB) host enters a suspend mode rather than polling an EUSB device that is busy performing a memory or other operations. Power is saved since polling is avoided. The busy EUSB device sends a not-yet signal back to the EUSB host to instruct the host to enter the suspend mode. When the EUSB device is ready to continue transfer with the host, the EUSB device wakes up the host by sending a ready signal back to the host.

Abstract: A portable universal serial bus (USB) data exchanger device is described herein. In one embodiment, the portable USB data exchanger includes at least one flash memory chip having a multi-level cell (MLC) memory array, a flash memory controller coupled to the at least one flash memory chip, the flash memory controller having a USB on-the-go (OTG) capability and controlling reading and writing of the flash memory chip, a first extended USB (EUSB) connector coupled to the flash memory controller to be coupled to a host, and a second EUSB connector coupled to the flash memory controller to be coupled to a slave USB device. The Portable USB data exchanger can communicate with either a host or a slave USB device without polling. Other methods and apparatuses are also described.

Abstract: A restrictive multi-level-cell (MLC) flash memory prohibits regressive page-writes. When a regressive page-write is requested, an empty block having a low wear-level count is found, and data from the regressive page-write and data from pages stored in the old block are written to the empty block in page order. The old block is erased and recycled. A two-level look-up table is stored in volatile random-access memory (RAM). A logical page address from a host is divided by a modulo divider to generate a quotient and a remainder. The quotient is a logical block address that indexes a first-level look-up table to find a mapping entry with a physical block address that selects a row in a second-level look-up table. The remainder locates a column in the row in the second-level look-up table. If any page-valid bits above the column pointed to by the remainder are set, the write is regressive.

Abstract: Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data and is relatively long. A page-mode caching PCM device has a lookup table (LUT) that caches write data that is later written to an array of PCM banks. Host data is latched into a line FIFO and written into the LUT, reducing write delays to the relatively slow PCM. Host read data can be supplied by the LUT or fetched from the PCM banks. A multi-line page buffer between the PCM banks and LUT allows for larger block transfers using the LUT. Error-correction code (ECC) checking and generation is performed for data in the LUT, hiding ECC delays for data writes into the PCM banks.

Abstract: An extended universal-serial bus (EUSB) bridge to a host computer can have peripheral component interconnect express (PCIE) protocol layers on one side of the bridge, and EUSB layers on the other side of the bridge, with a high-level bridging converter module connecting the upper layers. The PCIE physical, data-link, and transport layers may be eliminated by integrating the bridge with an I/O controller. PCIE requests and data payloads are directly sent to the bridge, rather than low-level PCIE physical signals. The PCIE data payloads are converted to EUSB data payloads by a high-level direct bridging converter module. Then the EUSB data payloads are passed down to an EUSB transaction layer, an EUSB data-link layer, and an EUSB physical layer which drives and senses physical electrical signals on both differential pairs of the EUSB bus.

Abstract: Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data and is relatively long. A page-mode caching PCM device has a lookup table (LUT) that caches write data that is later written to an array of PCM banks. Host data is latched into a line FIFO and written into the LUT, reducing write delays to the relatively slow PCM. Host read data can be supplied by the LUT or fetched from the PCM banks. A multi-line page buffer between the PCM banks and LUT allows for larger block transfers using the LUT. Error-correction code (ECC) checking and generation is performed for data in the LUT, hiding ECC delays for data writes into the PCM banks.

Abstract: Techniques for booting a host computer from a portable storage device with customized settings have been described herein. According to one embodiment, in response to detecting a portable storage device inserted into a first host computer having a first operating environment provided by a first operating system (OS) installed in the first host computer, rebooting the first host computer into a second operating environment using a second OS image stored in the portable device. In addition, a personal configuration file stored in the portable device is extracted to configure the second operating environment of the first host computer, such that the user of the portable storage device can operate the second host computer in view of the personal working environment. Other methods and apparatuses are also described.

Abstract: A multi-ring memory controller sends request packets to multiple rings of serial flash-memory chips. Each of the multiple rings has serial flash-memory chips with serial links in a uni-directional ring. Each serial flash-memory chip has a bypassing transceiver with a device ID checker that bypasses serial packets to a clock re-synchronizer and bypass logic for retransmission to the next device in the ring, or extracts the serial packet to the local device when an ID match occurs. Serial packets pass through all devices in the ring during one round-trip transaction from the controller. The average latency of one round is constant for all devices on the ring, reducing data-dependent performance, since the same packet latency occurs regardless of the data location on the ring. The serial links can be a Peripheral Component Interconnect (PCI) Express bus. Packets have modified-PCI-Express headers that define the packet type and data-payload length.

Abstract: Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data. The very long write-1 time may require wait states. To eliminate wait states for sequential accesses, the PCM cells are divided into 16 banks. Each bank has its own bank write latch that stores data locally at the bank while the bank is being written. Data lines to the banks are freed up to transfer data to other banks once the data is written into the local bank write latch, allowing the long set-current pulse to be applied locally to slowly grow crystals in the alloy resistors. External host data are buffered and applied to the data lines by an array data mux.

Abstract: A solid-state disk (SSD) has a smart storage switch with a smart storage transaction manager that re-orders host commands for accessing downstream single-chip flash-memory devices. Each single-chip flash-memory device has a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory blocks in the single-chip flash-memory device. Wear-leveling and bad block remapping are preformed by each single-chip flash-memory device, and at a higher level by a virtual storage processor in the smart storage switch. Virtual storage bridges between the smart storage transaction manager and the single-chip flash-memory devices bridge LBA transactions over LBA buses to the single-chip flash-memory devices.

Abstract: High performance and endurance non-volatile memory (NVM) based storage systems are disclosed. According to one aspect of the present invention, a NVM based storage system comprises at least one intelligent NVM device. Each intelligent NVM device includes a control interface logic and NVM. Logical-to-physical address conversion is performed within the control interface logic, thereby eliminating the need of address conversion in a storage system level controller. In another aspect, a volatile memory buffer together with corresponding volatile memory controller and phase-locked loop circuit is included in a NVM based storage system. The volatile memory buffer is partitioned to two parts: a command queue; and one or more page buffers. The command queue is configured to hold received data transfer commands by the storage protocol interface bridge, while the page buffers are configured to hold data to be transmitted between the host computer and the at least one NVM device.

Abstract: An electronic data flash card is accessible by a host computer, and includes a processing unit connected to a flash memory device that stores a data file, and an input-output interface circuit activated so as to establish a communication with the host computer. In an embodiment, the electronic data flash card uses a USB input/output interface circuit for communication with the host computer. A flash memory controller includes an index for converting logical addresses sent by the host computer into physical addresses associated with sectors of the flash memory device. The index is controlled by arbitration logic referencing to values from various look up tables and valid data stored in the flash memory device. The flash memory controller further includes a first-in-first-out unit (FIFO) for recycling obsolete sectors of the flash memory device in the background process so that they are available for reprogramming.

Abstract: An electronic data flash card is accessible by a host computer, and includes a processing unit connected to a flash memory device that stores a data file, and an input-output interface circuit activated so as to establish a communication with the host computer. In an embodiment, the electronic data flash card uses a USB input/output interface circuit for communication with the host computer. A flash memory controller includes an index for converting logical addresses sent by the host computer into physical addresses associated with sectors of the flash memory device. The index is controlled by arbitration logic referencing to values from various look up tables and valid data stored in the flash memory device. The flash memory controller further includes a first-in-first-out unit (FIFO) for recycling obsolete sectors of the flash memory device in the background process so that they are available for reprogramming.