Abstract: A memory integrated circuit device is provided. The device includes a plurality of regular address inputs and at least one spare address input configured for a selected mode or an unselected mode. The device includes a plurality of control inputs, a plurality of data inputs, and a plurality of data outputs. The device has a plurality of memory arrays. Each of the memory arrays comprises a plurality of memory cells. Each of the plurality of memory cells is coupled to a data input/output. The device has a spare group of memory cells comprising a plurality of spare memory cells. Each of the plurality of spare memory cells is externally (or internally) addressable using the address match table and configured with the spare address input; whereupon the spare address input is coupled to the address match table to access the spare memory cells.

Abstract: A memory interface device has an address input(s) configured to receive address information from an address stream of a host controller; an address output(s) configured to drive address information, and is coupled to a plurality of memory devices; an address match table comprising at least a revised address corresponding to a spare memory location; a control module configured to determine address information from an address stream from an address command bus coupled to a host controller during a run time operation; and a multiplexer coupled to the address input and coupled to the address output.

Abstract: An apparatus and method are provided for communicating with a plurality of physical memory circuits. In use, at least one virtual memory circuit is simulated where at least one aspect (e.g. power-related aspect, etc.) of such virtual memory circuit(s) is different from at least one aspect of at least one of the physical memory circuits. Further, in various embodiments, such simulation may be carried out by a system (or component thereof), an interface circuit, etc.

Abstract: A memory integrated circuit device is provided. The device includes a plurality of regular address inputs and at least one spare address input configured for a selected mode or an unselected mode. The device includes a plurality of control inputs, a plurality of data inputs, and a plurality of data outputs. The device has a plurality of memory arrays. Each of the memory arrays comprises a plurality of memory cells. Each of the plurality of memory cells is coupled to a data input/output. The device has a spare group of memory cells comprising a plurality of spare memory cells. Each of the plurality of spare memory cells is externally (or internally) addressable using the address match table and configured with the spare address input; whereupon the spare address input is coupled to the address match table to access the spare memory cells.

Abstract: A system and method are provided for simulating an aspect of a memory circuit. Included is an interface circuit that is in communication with a plurality of memory circuits and a system. Such interface circuit is operable to interface the memory circuits and the system for simulating at least one memory circuit with at least one aspect that is different from at least one aspect of at least one of the plurality of memory circuits. In accordance with various embodiments, such aspect may include a signal, a capacity, a timing, and/or a logical interface.

Abstract: An integrated circuit device. The device includes an address input(s) configured to receive address information from an address stream from an address command bus coupled to a host controller and an address output(s) configured to drive address information, and is coupled to a plurality of memory (DRAM) devices provided on a DIMM. The device has an address match table comprising a non-volatile memory device configured to store at least a revised address corresponding to a spare memory location and a bad address of at least one of the plurality of memory (DRAM) devices. The device has a control module configured to process and determine whether each address matches with a stored address in the address match table to identify the bad address and configured to replace the bad address with the revised address of the spare memory location.

Abstract: A memory integrated circuit device is provided. The device includes a plurality of regular address inputs and at least one spare address input configured for a selected mode or an unselected mode. The device includes a plurality of control inputs, a plurality of data inputs, and a plurality of data outputs. The device has a plurality of memory arrays. Each of the memory arrays comprises a plurality of memory cells. Each of the plurality of memory cells is coupled to a data input/output. The device has a spare group of memory cells comprising a plurality of spare memory cells. Each of the plurality of spare memory cells is externally (or internally) addressable using the address match table and configured with the spare address input; whereupon the spare address input is coupled to the address match table to access the spare memory cells.

Abstract: A method for operating a memory module device. The method can include transferring a chip select, command, and address information from a host memory controller. The host memory controller can be coupled to a memory interface device, which can be coupled to a memory module. The memory module can comprise a plurality of memory devices. The chip select, command and address information can be received at the memory interface using a command-and-address-latency (CAL) mode. Control logic can be used to initiate a power state transition from a first power state to a second power state of an input termination circuit in the memory interface device.

Abstract: A method includes presenting multiple memory circuits to a system as a virtual memory circuit having at least one characteristic that is different from a corresponding characteristic of one of the physical memory circuits; receiving, at an interface circuit, a first command issued from the system to the virtual memory circuit; and in response to receiving the first command, 1) directing a copy of the first command to a first physical memory circuit of the multiple physical memory circuits, and 2) performing a power-saving operation on at least one other physical memory circuit of the multiple physical memory circuits.

Abstract: An integrated circuit device. The device includes an address input(s) configured to receive address information from an address stream from an address command bus coupled to a host controller and an address output(s) configured to drive address information, and is coupled to a plurality of memory (DRAM) devices provided on a DIMM. The device has an address match table comprising a non-volatile memory device configured to store at least a revised address corresponding to a spare memory location and a bad address of at least one of the plurality of memory (DRAM) devices. The device has a control module configured to process and determine whether each address matches with a stored address in the address match table to identify the bad address and configured to replace the bad address with the revised address of the spare memory location.

Abstract: An interface circuit that is configured to receive a first read command from a memory controller to read first data stored in a first memory circuit and a second read command to read second data that is stored in a second memory circuit, and transmit the first data and the second data to the memory controller across a data bus without a delay on the data bus between the first data and the second data.

Abstract: Large capacity memory systems are constructed using multiple groups of memory integrated circuits or chips. The memory system includes one or more interface circuits for interfacing between the multiple groups of memory integrated circuits and a memory controller. The interface circuit may detect and/or recover failed data using error-checking information stored in a memory integrated circuit.

Abstract: A memory module, which includes at least one memory stack, comprises a plurality of DRAM integrated circuits and an interface circuit. The interface circuit interfaces the memory stack to a host system so as to operate the memory stack as a single DRAM integrated circuit. In other embodiments, a memory module includes at least one memory stack and a buffer integrated circuit. The buffer integrated circuit, coupled to a host system, interfaces the memory stack to the host system so to operate the memory stack as at least two DRAM integrated circuits. In yet other embodiments, the buffer circuit interfaces the memory stack to the host system for transforming one or more physical parameters between the DRAM integrated circuits and the host system.

Abstract: A memory circuit system and method are provided in the context of various embodiments. In one embodiment, an interface circuit remains in communication with a plurality of memory circuits and a system. The interface circuit is operable to interface the memory circuits and the system for performing various functionality (e.g. power management, simulation/emulation, etc.).

Abstract: An apparatus includes multiple first memory circuits, in which the multiple first memory circuits are positioned on at least one dual in-line memory module (DIMM). The apparatus includes an interface circuit operable to interface the first memory circuits with a system; present the first memory circuits to the system as one or more simulated second memory circuits; transmit, in response to receiving a first refresh control signal sent from the system to the one or more simulated memory circuits, multiple second refresh control signals to the first memory circuits; and apply a respective delay to each second refresh control signal transmitted to a corresponding first memory circuit. Each simulated second memory circuit has a corresponding second memory capacity that is greater than a first memory capacity of at least one of the first memory circuits.

Abstract: One embodiment of the present invention sets forth an interface circuit configured to combine time staggered data bursts returned by multiple memory devices into a larger contiguous data burst. As a result, an accurate timing reference for data transmission that retains the use of data (DQ) and data strobe (DQS) signals in an infrastructure-compatible system while eliminating the cost of the idle cycles required for data bus turnarounds to switch from reading from one memory device to reading from another memory device, or from writing to one memory device to writing to another memory device may be obtained, thereby increasing memory system bandwidth relative to the prior art approaches.

Abstract: A method for operating a memory module device. The method can include transferring a chip select, command, and address information from a host memory controller. The host memory controller can be coupled to a memory interface device, which can be coupled to a memory module. The memory module can comprise a plurality of memory devices. The chip select, command and address information can be received at the memory interface using a command-and-address-latency (CAL) mode. Control logic can be used to initiate a power state transition from a first power state to a second power state of an input termination circuit in the memory interface device.

Abstract: An apparatus includes multiple first memory circuits, each first memory circuit being associated with a first memory standard, where the first memory standard defines a first set of control signals that each first memory circuit circuits is operable to accept. The apparatus also includes an interface circuit coupled to the first memory circuits, in which the interface circuit is operable to emulate at least one second memory circuit, each second memory circuit being associated with a second different memory standard.

Abstract: Systems, methods, and apparatus, including computer program products, for providing termination resistance in a memory module are provided. An apparatus is provided that includes a plurality of memory circuits; an interface circuit operable to communicate with the plurality of memory circuits and to communicate with a memory controller; and a transmission line electrically coupling the interface circuit to a memory controller, wherein the interface circuit is operable to terminate the transmission line with a single termination resistance that is selected based on a plurality of resistance-setting commands received from the memory controller.

Abstract: A memory interface circuit device comprising a data structure configured to match and substitute an address in a run-time.