Abstract: A cold welding technique for securing a fiber optic cable (10) to a ferrule (26). The fiber optic cable (10) is inserted into a sleeve (12). The fiber cable and sleeve assembly is then slid into a sleeve bore (24) through one end of the ferrule (26) so that the fiber (14) extends out of an opposite end (40) of the ferrule (26). The sleeve (12) is then retracted from the ferrule (26). A cold electroplating process is performed so that a layer (50) of a suitable plating material is deposited over the end (40) of the ferrule (26) through which the fiber (14) extends so that the fiber cable (10) is held within the ferrule (26) and the ferrule opening is hermetically sealed. The sleeve (12) is then slid back into the ferrule (26) and is soldered to a fiber jacket (10) of the cable (10) to hold it in the desired location.

Abstract: A cold welding technique for securing a fiber optic cable (10) to a ferrule (26). The fiber optic cable (10) is inserted into a sleeve (12). The fiber cable and sleeve assembly is then slid into a sleeve bore (24) through one end of the ferrule (26) so that the fiber (14) extends out of an opposite end (40) of the ferrule (26). The sleeve (12) is then retracted from the ferrule (26). A cold electroplating process is performed so that a layer (50) of a suitable plating material is deposited over the end (40) of the ferrule (26) through which the fiber (14) extends so that the fiber cable (10) is held within the ferrule (26) and the ferrule opening is hermetically sealed. The sleeve (12) is then slid back into the ferrule (26) and is soldered to the ferrule to hold it in the desired location.

Abstract: A device and a process for integrating light energy transmit and/or receive functions with active devices such as GaAs or InP devices or light emitting devices, such as lasers. The device and process includes forming a passivation layer on top of the active device and forming a silicon photodetector on top of the passivation layer. The photodetector may be formed utilizing a standard solar cell growth process and may be formed as a mesa on top of the active or light-emitting device, thus forming a relatively less complicated semiconductor with an integrated monitoring device.

Abstract: A method and system for an integrated singulation process for electrically testing semiconductor devices in a strip, singulating the semiconductor devices and inspecting the semiconductor devices. An electrical tester marks a code on the semiconductor devices indicating whether each semiconductor device passed an electrical test. An optical code reader reads the code and stores the test results in memory. A singulation machine singulates the semiconductor devices into individual semiconductor devices and a sorter discards the semiconductor devices which failed the electrical tests. An inspection machine inspects the dimensions of each semiconductor device and a sorter discards the semiconductor devices which failed the inspection. The inspection machine outputs the semiconductor devices which passed both the electrical test and inspection.

Abstract: The accuracy of electrical tests on semiconductor packages is increased and package damage avoided by providing vacuum sensing means to determine proper seating of the package in the testing socket. Embodiments include linking operation of the testing plunger to the vacuum sensor so that the plunger is activated upon proper seating of the semiconductor package in the testing socket.

Abstract: Quality control during semiconductor package testing is improved and package damage in the testing apparatus is avoided by employing a camera to monitor seating of the semiconductor package in the test socket. Embodiments include linking operation of the plunger to the camera so that the plunger is activated upon proper seating of the semiconductor package in the test socket and recording semiconductor package data captured by the camera.

Abstract: A solar cell comprises a superstrate formed from a material that is transparent to light, a first layer formed of delta doped silicon, a plurality of layers formed from semiconductor materials, each characterized by multi-quantum wells and multiple band gaps, a first semiconductor layer having a band gap energy state that is the smallest, the last semiconductor layer having-a band gap that is the largest, and the intermediate semiconductor layers having band gaps transitioning from the smallest to the largest, a second layer overlying the semiconductor layers and formed of delta doped silicon, an n-cap layer formed on the second delta doped layer, and a metal layer formed on the n-cap layer and serving to reflect light into the semiconductor.

Abstract: Disclosed are hydrogen gettering structure (11) and use of such structure and methods of forming such structure. The hydrogen gettering structure (11) includes a titanium member (1) and a silver-doped palladium layer (3) on the titanium member (1), the silver assisting palladium to increase the hydrogen gettering. The silver-doped palladium can be deposited on the titanium member by sputtering. The hydrogen gettering structure (11) can be attached to a semiconductor module component (7) and incorporated in a semiconductor module (10) to increase hydrogen gettering, or can be included in other structure (e.g., nuclear reactor structure) where absorption or gettering of hydrogen is necessary or desired.

Abstract: A method of solar cell external interconnection and a solar cell panel (1) made thereby are disclosed. An assembly (2) including a solar cell module (4), a flexible lead frame (5) to which the solar cell module is to be interconnected and a solder located between the solar cell module and the flexible lead frame, is provided. The solder is heated by directing a hot gas (42) into the area of the solder to melt the solder and form a soldered connection (6) between the solar cell module and the lead frame. The soldered assembly is attached to a module carrier panel (3) by embedding a portion of the assembly in a first, flexible adhesive (32) and another portion of the assembly in a second, thermally curable adhesive (33) which is then cured to anchor the assembly on the module carrier panel.

Abstract: An angle cavity resonant photodetector assembly (8), which uses multiple reflections of light within a photodetector (14) to convert input light into an electrical signal. The photodetector (14) has a combination of generally planar semiconductor layers including semiconductor active layers (20) where light is converted into an electrical output. The photodetector (14) is positioned relative to a waveguide (10), where the waveguide (10) has a waveguide active layer (22) located between a pair of waveguide cladding layers (24) and (26) and includes a first end (28) for receiving light and a second end (30) for transmitting the light to the photodetector (14). The photodetector (14) has a first reflector (12) and second reflector (16) that provides for multiple reflections across the semiconductor active layers (20).

Abstract: A method of making a micro-miniature switch device (10), which has at least one member (68) movable relative to a substrate (12) upon which the device is provided, includes providing a layer of sacrificial non-photolithography material upon a stratum connected to the substrate. A template is provided via photolithographing step that uses a photoresist material upon a stratum connected to the substrate. A layer is provided to include at least a portion of the movable member. The photoresist material and the sacrificial non-photolithography material are removed using photoresist developer. Preferably, at least two photolithography process steps utilize a single photolithographic mask. Also preferably, substrate material is removed to create a recess and at least one channel into the substrate, wherein the channel intersects the recess. At least a portion of the movable member is provided at a location within the recess and at least a portion of the movable member is provided at a location within the channel.

Abstract: A resonant photodetector assembly (10) which uses multiple reflections of light within a photodetector (20) to convert input light into an electrical signal. The photodetector (20) includes a combination of generally planar semiconductor layers including a photodetector active layer (36) where light is converted into an electrical output. The photodetector (20) further includes a first outer electrical contact layer (34) and a second outer electrical contact layer (42). A waveguide (22) is positioned on the photodetector (20) and has a waveguide active layer (26) positioned between a pair of waveguide cladding layers (24, 28), a first end (30) for receiving input light and a second end (50) for reflecting the light. A reflector (32) is positioned on the second end (50) of the waveguide (22) at an angle relative to a line parallel to the substrate (14), where the reflector (32) reflects the light received by the first end (30) of the waveguide active layer (26) towards the photodetector (20).

Abstract: A resonant photodetector assembly (10) which uses multiple reflections of light within a photodetector (20) to convert input light into an electrical signal. The photodetector (20) includes a combination of generally planar semiconductor layers including a photodetector active layer (36) where light is converted into an electrical output. The photodetector (20) further includes a first outer electrical contact layer (34) and a second outer electrical contact layer (42). A waveguide (22) is positioned on the photodetector (20) and has a waveguide active layer (26) positioned between a pair of waveguide cladding layers (24, 28), a first end (30) for receiving input light and a second end (50) for reflecting the light. A reflector (32) is positioned on the second end (50) of the waveguide (22) at an angle relative to a line parallel to the substrate (14), where the reflector (32) reflects the light received by the first end (30) of the waveguide active layer (26) towards the photodetector (20).

Abstract: A simplified method and system for interconnecting solar cell arrays which does not utilize cause damage to the solar cells while at the same time minimizing process steps. In particular, in accordance with the present invention, interconnection between solar cell are made by way of a conductive epoxy, patterned on a substrate. The use of the epoxy eliminates the need for wire bonding as well as eliminates additional processing steps to interconnect the solar cell arrays.

Abstract: A micro-miniature switch apparatus (10) includes a substrate (12) having a surface (14) with first and second channels (16, 18) extending from the surface (14) into the substrate (12). The first and second channels (16, 18) are spaced apart from each other, with a channel axis (20) extending longitudinally through the first and second channels (16, 18). A body (68) that is movable relative to the substrate (12) includes two arms (70, 72). Each of the arms (70, 72) extends into one of the first and second channels (16, 18) to support the body (68) for movement relative to the substrate (12) between first and second electrical conditions of the switch apparatus (10).

Abstract: A method for fabricating a monolithic micro-optical component. The construction of the micro-optical components is accomplished by using standard semiconductor fabrication techniques. The method comprises the steps of depositing an etch stop layer (44) onto a semiconductor substrate (42); depositing an optical component layer (46) onto the etch stop layer (44); coating the entire surface of the optical component layer with a photoresist material; applying a photoresist mask (50) to the photoresist material on the optical component layer (46); selectively etching away the optical component layer (46) to form at least one optical column (52); forming a pedestal (54) for each of the optical columns (52) by selectively etching away the etch stop layer (44); and finally polishing each of the optical columns (52), thereby forming monolithic optical components (56).

Abstract: An angle cavity resonant photodetector assembly (8), which uses multiple reflections of light within a photodetector (14) to convert input light into an electrical signal. The photodetector (14) has a combination of generally planar semiconductor layers including semiconductor active layers (20) where light is converted into an electrical output. The photodetector (14) is positioned relative to a waveguide (10), where the waveguide (10) has a waveguide active layer (22) located between a pair of waveguide cladding layers (24) and (26) and includes a first end (28) for receiving light and a second end (30) for transmitting the light to the photodetector (14). The photodetector (14) has a first reflector (12) and second reflector (16) that provides for multiple reflections across the semiconductor active layers (20).

Abstract: A vacuum chuck (34) for holding thin sheet material, particularly during high-temperature manufacturing processes, and an apparatus (10) for forming a substantially uniform coating of a substance on a thin sheet material. The vacuum chuck includes a chuck body (36) having a gas-permeable support surface (38) for supporting the thin sheet material to define a vacuum chamber (49) having an inlet (54), a valve member (56) for controlling fluid flow through the vacuum chamber inlet, and a locking shim (58) for holding the valve member in the vacuum chamber inlet.

Abstract: The invention relates to an optical integrated circuit microbench system for accurately aligning optical fiber and waveguides to efficiently couple energy between optical devices. This is accomplished by using the anisotropic etch characteristics of III-V semiconductor materials in two orthogonal directions. One etch direction serves to provide a channel for precise fiber-positioning; the other direction, which is orthogonal provides a reflecting surface for directing the optical energy onto optical devices.

Abstract: A micromirror device (10) is provided with a rotatable optical component (22) for use in a digital image processing application. The micromirror device (10) includes a semiconductor wafer (12), having a recess (14) formed therein, and a platform (20) with the optical component (22) deposited thereon that is movably coupled to the side surface of the recess (14). A first magnetic field source (24) is disposed around the periphery of the optical component (22) on the platform (20) and a second magnetic field source (26) is disposed proximate to this first magnetic field source (24), such that these magnetic field sources are selectively activatable to generate an electromagnetic field for rotating the platform (20). More specifically, the second magnetic field source (26) is disposed on the angular side surfaces of the recess (14) or adjacent to the recess (14) on a top surface of the wafer (12).