Abstract: An interconnected apparatus for producing a low loss, reproducible electrical interconnection between a semiconductor device and a substrate includes a rod and rod receptor. The rod, generally cylindrically shaped, is attached to the semiconductor device and includes an outer circumferential wall which comes into contact with the rod receptor during a bonding process. A lip portion is formed on one end of the rod receptor for interlocking engagement with the rod. The rod receptor is plated on the substrate and includes a generally circularly shaped body which forms a centrally disposed well for receiving the rod. A lip portion is formed on one end or mouth of the rod receptor for interlocking engagement with the rod. When the rod and corresponding receptor are aligned and brought together, the rod deforms and interlocks with its corresponding rod receptor. A thermo-compression bonding process is utilized to bond the rod to the rod receptor, thereby producing a strong interlocking bond.

Abstract: An interconnected apparatus for producing a low loss, reproducible electrical interconnection between a semiconductor device and a substrate includes a rod and rod receptor. The rod, generally cylindrically shaped, is attached to the semiconductor device and includes an outer circumferential wall which comes into contact with the rod receptor during a bonding process. A lip portion is formed on one end of the rod receptor for interlocking engagement with the rod. The rod receptor is plated on the substrate and includes a generally circularly shaped body which forms a centrally disposed well for receiving the rod. A lip portion is formed on one end or mouth of the rod receptor for interlocking engagement with the rod. When the rod and corresponding receptor are aligned and brought together, the rod deforms and interlocks with its corresponding rod receptor. A thermo-compression bonding process is utilized to bond the rod to the rod receptor, thereby producing a strong interlocking bond.

Abstract: The invention relates to an optical integrated alignment device for accurately aligning optical fiber and waveguides to efficiently couple energy between optical devices. This is accomplished by using the anisotropic etch characteristics of III-V semiconductor materials. One orthogonal etch direction serves to provide a channel for precise fiber-positioning; the other direction, which is also orthogonal provides a reflecting surface for directing the optical energy between optical devices; and finally, a non-selective etch to form a micro-optical lens to focus optical energy to an optical device.

Abstract: A method for fabricating a monolithic micro-optical component. The construction of the micro-optical components is accomplished by using standard semiconductor fabrication techniques. The method comprises the steps of depositing an etch stop layer (44) onto a semiconductor substrate (42); depositing an optical component layer (46) onto the etch stop layer (44); coating the entire surface of the optical component layer with a photoresist material; applying a photoresist mask (50) to the photoresist material on the optical component layer (46); selectively etching away the optical component layer (46) to form at least one optical column (52); forming a pedestal (54) for each of the optical columns (52) by selectively etching away the etch stop layer (44); and finally polishing each of the optical columns (52), thereby forming monolithic optical components (56).

Abstract: A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.

Abstract: A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.

Abstract: The invention relates to a method for fabricating III-V semiconductor micro-optical lenses for hybrid integration with micro-optical devices, where a micro-optical lens is formed from a semiconductor wafer by selectively etching a surface of the semiconductor wafer and a lens arm is formed from the semiconductor wafer on a surface opposite the surface by selectively etching the surface of the semiconductor wafer. The lens and lens arm are then cleaved from the substrate wafer and directly mounted to a micro-optical device. As a result of using III-V semiconductor material to form micro-optical lenses for hybrid integration to micro-optical devices of the same semiconductor material, thermal expansion stability is increased and efficient transfer of light between micro-optical lenses and micro-optical devices is achieved.