Abstract: An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.

Abstract: An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.

Abstract: A display device including: a first conductive pattern group including: a scan line and a gate electrode spaced from the scan line, a driving semiconductor pattern below the first conductive pattern group and including: a channel region overlapping the gate electrode; a source region; and a drain region, the channel region between the source region and the drain region; a second conductive pattern group on the first conductive pattern group and including: a data line crossing the scan line; a drain electrode coupled to the drain region; a pixel electrode extending from the drain electrode; a first coupling pattern coupled to the gate electrode; and a driving voltage line coupled to the source region; and a capacitor coupled to the first coupling pattern and the driving voltage line and overlapping the pixel electrode.

Abstract: An organic light emitting diode display device includes a substrate including a pixel portion and a peripheral portion, a semiconductor layer including a pixel switching semiconductor layer and a driving semiconductor layer formed on the pixel portion, and a peripheral switching semiconductor layer formed on the peripheral portion. A first gate insulating layer is formed on the semiconductor layer. A peripheral switching gate electrode is formed on the first gate insulating layer of the peripheral portion, and a pixel switching gate electrode and a driving gate electrode are formed on the first gate insulating layer of the pixel portion. A length of a peripheral switching low concentration doping region formed in the peripheral switching semiconductor layer may be larger than a length of a pixel switching low concentration doping region and a driving low concentration doping region formed in the pixel switching semiconductor layer and the driving semiconductor layer, respectively.

Abstract: A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.

Abstract: A liquid crystal display device is disclosed.

Abstract: A liquid crystal display device is disclosed. The device includes: a first substrate, a thin film transistor formed in a first, non-transmissive region on the first substrate, including a gate electrode, a source electrode and a drain electrode, and a storage capacitor formed in a second, transmissive region on the first substrate, where a first electrode and a second electrode of the storage capacitor are made of a transparent conductive material.

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract: A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract: A method of driving a display panel includes sequentially applying a gate signal to a plurality of gate lines of the display panel during each frame period of a plurality of frame periods, applying data voltages to a plurality of data lines of the display panel, and applying a common voltage to the display panel, a polarity of the common voltage being inverted periodically and asynchronously with a frame period of the frame periods.

Abstract: A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.

Abstract: An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.

Abstract: An organic light emitting diode display device includes a substrate including a pixel portion and a peripheral portion, a semiconductor layer including a pixel switching semiconductor layer and a driving semiconductor layer formed on the pixel portion, and a peripheral switching semiconductor layer formed on the peripheral portion. A first gate insulating layer is formed on the semiconductor layer. A peripheral switching gate electrode is formed on the first gate insulating layer of the peripheral portion, and a pixel switching gate electrode and a driving gate electrode are formed on the first gate insulating layer of the pixel portion. A length of a peripheral switching low concentration doping region formed in the peripheral switching semiconductor layer may be larger than a length of a pixel switching low concentration doping region and a driving low concentration doping region formed in the pixel switching semiconductor layer and the driving semiconductor layer, respectively.

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract: A color filter display plate includes a substrate, a light blocking member on the substrate, a color filter on the substrate, a covering layer covering the light blocking member and the color filter, a common electrode on the covering layer, a plurality of support members on the common electrode at locations corresponding to the light blocking member, and a main column spacer, a middle column spacer, and an auxiliary column spacer, each of which is on a corresponding one of the support members, the column spacers having different heights and area ratios.

Abstract: A display device includes a gate line, a switching device, a first electrode, an organic light emitting structure and a second electrode. The gate line may include a first conductive layer pattern and a second conductive layer pattern. The first conductive layer pattern may extend along a first direction and the second conductive layer pattern may extend along a second direction. The switching device may be connected to the gate line. The first electrode may be electrically connected to the switching device. The organic light emitting structure may be disposed on the first electrode. The second electrode may be disposed on the organic light emitting structure.

Abstract: A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.

Abstract: A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.

Abstract: A method of driving a display panel includes sequentially applying a gate signal to a plurality of gate lines of the display panel during each frame period of a plurality of frame periods, applying data voltages to a plurality of data lines of the display panel, and applying a common voltage to the display panel, a polarity of the common voltage being inverted periodically and asynchronously with a frame period of the frame periods.