Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract: A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.

Abstract: A color filter display plate includes a substrate, a light blocking member on the substrate, a color filter on the substrate, a covering layer covering the light blocking member and the color filter, a common electrode on the covering layer, a plurality of support members on the common electrode at locations corresponding to the light blocking member, and a main column spacer, a middle column spacer, and an auxiliary column spacer, each of which is on a corresponding one of the support members, the column spacers having different heights and area ratios.

Abstract: A liquid crystal display device is disclosed.

Abstract: In a pixel for displays capable of simplifying manufacturing process, a display apparatus having a simplified pixel structure and a method of manufacturing a cost competitive display device, a display pixel includes a channel layer, first to third signal lines, first and second insulating layers and a pixel electrode. The first signal line is formed on the first insulating layer. The first insulating layer insulates the channel layer from the first signal line. The second insulating layer insulates the first signal line from the second and third signal lines, and includes contact holes. The second and third signal lines are connected to the channel layer through the contact holes. The pixel electrode including indium zinc oxide is formed on the identical layer with the first and second signal lines, and disposed on the second insulating layer. Therefore, manufacturing process is simplified and manufacturing time is reduced.

Abstract: In an ion implanting apparatus and a method for implanting ions are provided. The ion implanting apparatus includes an ion source part, a substrate holding part, a beam current adjusting part, a doping quantity measuring part, and an ion beam control part. The ion source part generates an ion beam. The ion beam is irradiated onto the substrate and the ions are implanted into the substrate. The beam current adjusting part is disposed between the ion source part and the substrate holding part, to adjust a beam current. The doping quantity measuring part is disposed on substantially the same surface as the substrate, to measure ion doping quantity. The ion beam control part is connected to the doping quantity measuring part, to control the ion source part and the beam current adjusting part.

Abstract: A thin film transistor (TFT) substrate and a method of manufacturing the same in which the surface of a data pattern is implanted with ions to increase the adhesion force with a passivation layer formed by a subsequent process. The TFT substrate includes: an active layer having a channel region formed of a semiconductor and source and drain regions doped with impurities; a data pattern formed on the active layer and including source and drain electrodes, the surface of which is implanted with ions to increase hydrophobicity and roughness; a passivation layer formed on the data pattern and including a pixel contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode through the pixel contact hole, and a method of manufacturing the same.

Abstract: In an ion implanting apparatus and a method for implanting ions are provided. The ion implanting apparatus includes an ion source part, a substrate holding part, a beam current adjusting part, a doping quantity measuring part, and an ion beam control part. The ion source part generates an ion beam. The ion beam is irradiated onto the substrate and the ions are implanted into the substrate. The beam current adjusting part is disposed between the ion source part and the substrate holding part, to adjust a beam current. The doping quantity measuring part is disposed on substantially the same surface as the substrate, to measure ion doping quantity. The ion beam control part is connected to the doping quantity measuring part, to control the ion source part and the beam current adjusting part.

Abstract: In a pixel for displays capable of simplifying manufacturing process, a display apparatus having a simplified pixel structure and a method of manufacturing a cost competitive display device, a display pixel includes a channel layer, first to third signal lines, first and second insulating layers and a pixel electrode. The first signal line is formed on the first insulating layer. The first insulating layer insulates the channel layer from the first signal line. The second insulating layer insulates the first signal line from the second and third signal lines, and includes contact holes. The second and third signal lines are connected to the channel layer through the contact holes. The pixel electrode including indium zinc oxide is formed on the identical layer with the first and second signal lines, and disposed on the second insulating layer. Therefore, manufacturing process is simplified and manufacturing time is reduced.