Abstract: Disclosed in the present invention is hyperspectral image classification method based on context-rich networks. The method comprises a training stage and a prediction stage, wherein the training stage comprises image pre-processing, sample selection and network training. Firstly, performing normalization on a hyperspectral image, and then randomly selecting an appropriate proportion of marked samples from each category to generate a label map, and performing training by using the designed network; in the prediction stage, directly inputting the whole image into the trained network and obtaining a final classification result. By means of the present invention, data pre-processing, feature extraction, the process of context-rich information capturing, and classification are taken into comprehensive consideration in the whole flow; and the classification of a hyperspectral image is realized by means of constructing an end-to-end network.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: A CO2 gas-liquid phase transition-based multistage compression energy storage apparatus for converting thermal energy into mechanical energy, including: a gas storage; a liquid storage tank; an energy storage assembly, which includes compressors and energy storage heat exchangers; an energy release assembly (400), which includes energy release heat exchangers and expanders; a heat exchange assembly the energy generated by the energy storage assembly, and the energy release heat exchangers being capable of receiving the energy temporarily stored by the heat exchange assembly; and a driving assembly, which includes an energy input member and a first driving member, the energy input member absorbing external thermal energy to drive the first driving member to work, and the first driving member being used for driving the compressors to work.

Abstract: A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tunnel junction includes from top to bottom: a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Nucleation centers are provided at two ends of the ferromagnetic free layer to generate a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, and when a write pulse is applied, an electron spin current is generated and drives the magnetic domain wall through a spin-orbit torque to move; a plurality of local magnetic domain wall pinning centers are provided at an interface between the spin-orbit coupling layer and the ferromagnetic free layer to enhance a strength of a DM interaction constant between interfaces.

Abstract: Disclosed are a dynamic error measurement apparatus, system, and method for an electricity meter. The measurement apparatus includes a test signal generation unit configured to generate a voltage test signal and two-circuit current test signals, output the voltage test signal to a measurement unit, and output the two-circuit current test signals to the measurement unit and a current summation unit; the measurement unit configured to determine two-circuit electric energy values based on the voltage test signal and the two-circuit current test signals, and output the two-circuit electric energy values to a calculation control unit; the current summation unit configured to determine a combined current signal based on the two-circuit current test signals; and the calculation control unit configured to determine a total electric energy value based on the two-circuit electric energy values. The system includes a standard meter and a measurement apparatus.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: The disclosure relates to the technical field of batteries, and discloses a cathode material and a preparation method thereof, a cathode plate and an O3-type layered sodium ion battery. The chemical formula of the cathode material is NaM1-x-y-zNixFeyMnzO2, wherein M comprises a first metal element, and the first metal element has at least one f electron orbital. Ni, Fe and Mn elements in the cathode material are elements containing a d electron orbital. By doping the element M, on the one hand, the f electron orbital and the d electron orbitals are mutually entangled, properties of the cathode material are synergistically improved, so that the structure and air stability of the material are improved; and on the other hand, interaction of all elements in the material can be facilitated, so that ions can move away from original positions to generate vacancies, ion diffusion channels of sodium ions are enlarged, and the rate capability of the material is improved.

Abstract: This disclosure relates to a battery assembly of an electrified vehicle, and in particular to a battery pack with a vent gas passageway. An example battery assembly includes a battery array having a plurality of battery cells. Each of the battery cells includes a vent configured to release vent gas from a respective one of the battery cells. Further, the battery assembly includes an enclosure assembly surrounding the battery array, and a vent gas passageway within the enclosure assembly. The vent gas passageway includes a plurality of inlet ports, and each of the inlet ports is substantially aligned with a respective one of the vents.

Abstract: This application relates to a patterning material, a patterning composition, and a pattern forming method. The patterning material in this application includes a metal-oxygen cluster framework, a radiation-sensitive organic ligand, and a second ligand. The radiation-sensitive organic ligand coordinates with a metal M through a coordination atom. The coordination atom is at least one of: an oxygen atom, a sulfur atom, a selenium atom, a nitrogen atom, or a phosphorus atom. The radiation-sensitive organic ligand is a monodentate ligand or a polydentate ligand with a denticity of two or more. The second ligand is an inorganic ion or a coordination group.

Abstract: A memory device includes a semiconductor substrate, a first continuous floating gate structure, a dielectric layer, and a control gate electrode. The semiconductor substrate has a first active region. The first continuous floating gate structure is over the first active region of the semiconductor substrate, wherein the first continuous floating gate structure has first and second inner sidewalls facing each other. The dielectric layer has a first portion extending along the first inner sidewall of the first continuous floating gate structure and a second portion extending along the second inner sidewall of the first continuous floating gate structure. The control gate electrode is over the dielectric layer. The control gate electrode is in contact with the first and second portions of the dielectric layer.

Abstract: Provided is a spintronic device, a memory cell, a memory array, and a read and write circuit applied in a field of integration technology. The spintronic device includes: a bottom electrode; a spin orbit coupling layer, arranged on the bottom electrode; at least one pair of magnetic tunnel junctions, arranged on the spin orbit coupling layer, wherein each of the magnetic tunnel junctions includes a free layer, a tunneling layer, and a reference layer arranged sequentially from bottom to top, and wherein magnetization directions of reference layers of two magnetic tunnel junctions of each pair of the magnetic tunnel junctions are opposite; and a top electrode, arranged on a reference layer of each of the magnetic tunnel junctions.

Abstract: The present disclosure provides a displacement detection circuit of a maglev rotor system and a displacement self-sensing system thereof.

Abstract: A tunable-liquid-crystal-grating-based holographic true 3D display system comprises a laser, a filter, a beam expander, a semi-transparent semi-reflective mirror, a spatial light modulator, a lens I, a diaphragm, a tunable liquid crystal grating, a polaroid, a signal controller, a lens II and a receiving screen. The laser, the filter and the beam expander are used for generating collimated incident light. The spatial light modulator is loaded with a hologram of a 3D object. The diaphragm is positioned behind the lens I for eliminating a high-order diffracted light in the holographic true 3D display. The tunable liquid crystal grating is located on the back focal plane of the lens I and on the front focal plane of the lens II, and the signal controller is used for synchronously controlling the voltage of the tunable liquid crystal grating and the generation and loading of the hologram.

Abstract: Systems and methods include connecting to and authenticating a plurality of user devices; utilizing a plurality of RESTful (Representational State Transfer web service) endpoints to communicate with the plurality of user devices; providing any of policy and configuration to the plurality of user devices utilizing version number via a RESTful endpoint; caching the any of policy and configuration for each device of the plurality of user devices; and receiving metrics based on measurements at the plurality of user devices according to corresponding policy and configuration, via a RESTful endpoint.

Abstract: A method for training a three-dimensional face reconstruction model includes inputting an acquired sample face image into a three-dimensional face reconstruction model to obtain a coordinate transformation parameter and a face parameter of the sample face image; determining the three-dimensional stylized face image of the sample face image according to the face parameter of the sample face image and the acquired stylized face map of the sample face image; transforming the three-dimensional stylized face image of the sample face image into a camera coordinate system based on the coordinate transformation parameter, and rendering the transformed three-dimensional stylized face image to obtain a rendered map; and training the three-dimensional face reconstruction model according to the rendered map and the stylized face map of the sample face image.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack structure and a contact structure. The stack structure comprises interleaved gate layers and insulating layers. The contact structure comprises a conductive structure and one or more insulating structures. The conductive structure can extend through the stack structure and form a conductive connection with one of the gate layers. The one or more insulating structures surround the conductive structure and electrically isolate the conductive structure from remaining ones of the gate layers. The one or more insulating structures further include one or more first insulating structures. Each of the one or more first insulating structures is disposed between an adjacent pair of the insulating layers, and the one or more first insulating structures are disposed on a first side of the one of the gate layers.

Abstract: A three-dimensional (3D) memory device includes a plurality of memory planes and a separation block. Each memory plane includes a plurality of memory blocks. Each memory block includes a memory stack including interleaved conductive layers and first dielectric layers, and a plurality of channel structures each extending through the memory stack. The separation block extending laterally to separate each two adjacent memory planes. Each separation block includes a dielectric stack including interleaved second dielectric layers and the first dielectric layers. The first dielectric layers extend across the memory blocks and the separation block, and the second dielectric layers separate the conductive layers of two adjacent memory blocks.

Abstract: A three-dimensional (3D) memory device includes interleaved conductive layers and dielectric layers. Edges of the conductive layers and dielectric layers define a plurality of stairs. The 3D memory device also includes a plurality of landing structures each over a respective conductive layer at a respective stair. Each of the landing structures includes a first layer having a first material and a second layer having a second material, the first layer being over the second layer.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a stack structure, and a slit structure extending. The stack structure includes interleaved conductive layers and dielectric layers. Edges of the interleaved conductive layers and dielectric layers define a staircase structure. Each one of the conductive layers has a thickened portion in the staircase structure. The thickened portion extends along a first direction. The slit structure extends through the stack structure and along a second direction perpendicular to the first direction, such that the slit structure cuts off at least one, but not all, of the thickened portions of the conductive layers.

Abstract: Techniques for video manipulation using a product card within a short-form video environment are disclosed. Display is accomplished using a video stream interface that can be executed on an electronic device associated with a user. The video stream, such as a short-form video or livestream video, can include one or more products. The display shows product cards associated with the products within the video. The product cards originate from a repository, a third-party website, or some other source. The product information includes text, video, and/or audio content. The user is provided an option to purchase one or more of the products presented within the video by selecting the product card. The viewer selects product cards displayed in front of the video to learn more about the products and/or purchase the products.