Abstract: A method for determining an optimized write pattern for low write error rate operation of a spin torque magnetic random access memory. The method provides a way to optimize the write error rate without affecting the memory speed. The method comprises one or more write pulses. The pulses may be independent in amplitude, duration and shape. Various exemplary embodiments adjust the write pattern based on the memory operating conditions, for example, operating temperature.

Abstract: The invention relates to a radiofrequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6) for generating an oscillating signal at an oscillation frequency on an output terminal (10), and a terminal (18) for controlling the frequency or amplitude of the oscillating signal, and a feedback loop (44) comprising an amplifier (46) provided with: an input connected to the output terminal (10) of the magnetoresistive device (6) so as to amplify the portion of an oscillating signal detected at the output terminal, and an output connected to the control terminal (18) so as to inject onto said control terminal the amplified portion of the oscillating signal which is phase-related to the oscillating signal generated at the output terminal.

Abstract: The invention relates to a radio frequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6), a terminal (18) for controlling the frequency or amplitude of the oscillating signal, a servo loop (34) connected between the output terminal and the control terminal for applying a control signal to the control terminal in order to slave a characteristic of the oscillating signal to a reference value, the servo loop (34) comprising: a sensor (36) of the amplitude of the oscillating signal oscillations, and a comparator (38) capable of generating the control signal according to the measured amplitude and the reference value.

Abstract: A radiofrequency oscillator comprises: a free layer (4), a current injector (6) for injecting spin-polarized current into the free layer, this injector having a spin-polarized current injection face (16) directly in contact with the free layer, a magnetoresistive contact (8) having a measurement face (26) directly in contact with the free layer, in order to form, in combination with the free layer, a tunnel junction for measuring the precession of the magnetization of the free layer, a conducting pad (30) directly in contact with the free layer in order to make an electrical current flow through the injector without passing through the magnetoresistive contact. At least part of the measurement face (26) and part of the injection face (16) are placed facing each other on each side of the free layer (4).

Abstract: A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic, layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.