Abstract: Disclosed are devices and methods related to radio-frequency (RF) shielding of RF modules. In some embodiments, tuned shielding can be achieved by utilizing different structures and/or arrangements of shielding-wirebonds to increase shielding in areas where needed, and to decrease shielding where not needed. Such tuning of shielding requirements can be obtained by measuring RF power levels at different locations of a module having a given design. Such tuned RF shielding configurations can improve the overall effectiveness of shielding, and can also be more cost effective to implement.

Abstract: A radio frequency (RF) module comprises RF-shielding structure for providing three-dimensional electromagnetic interference shielding with respect to one or more RF devices disposed on the module. The RF-shielding may comprise wirebond structures disposed adjacent to or surrounding an RF device. Two or more intramodule devices may have wirebond structures configured to at least partially block certain types of RF signals disposed between the devices, thereby reducing effects of cross-talk between the devices.

Abstract: A radio frequency (RF) module comprises a conductive top layer configured to improve RF interference-shielding functionality with respect to one or more RF devices disposed on the module. The conductive top layer may be segmented as to form one or more segments of the top layer that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated, top conductive layers correspond to different devices of the module. The top layer may be etched or cut to achieve such segmentation.

Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace with a first edge substantially parallel to a second edge and substantially equal in length to the second edge. The first trace includes a third edge substantially parallel to a fourth edge. The fourth edge is divided into three segments. The outer segments are a first distance from the third edge. The middle segment is a second distance from the third edge. Further, the coupler includes a second trace, which includes a first edge substantially parallel to a second edge and substantially equal in length to the second edge. The second trace includes a third edge substantially parallel to a fourth edge. The fourth edge is divided into three segments. The outer segments are a first distance from the third edge. The middle segment is a second distance from the third edge.

Abstract: Disclosed are devices and methods related to radio-frequency (RF) shielding of RF modules. In some embodiments, tuned shielding can be achieved by utilizing different structures and/or arrangements of shielding-wirebonds to increase shielding in areas where needed, and to decrease shielding where not needed. Such tuning of shielding requirements can be obtained by measuring RF power levels at different locations of a module having a given design. Such tuned RF shielding configurations can improve the overall effectiveness of shielding, and can also be more cost effective to implement.

Abstract: This disclosure relates to a harmonic termination circuit that is separate from a load line. In one embodiment, the load line is configured to match an impedance at the power amplifier output at a fundamental frequency of the power amplifier output and the harmonic termination circuit is configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. According to certain embodiments, the load line and the harmonic termination circuit can be electrically coupled to the power amplifier output external to a power amplifier die via different output pins of the power amplifier die.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: This disclosure relates to a harmonic termination circuit that is separate from a load line. In one embodiment, the load line is configured to match an impedance at the power amplifier output at a fundamental frequency of the power amplifier output and the harmonic termination circuit is configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. According to certain embodiments, the load line and the harmonic termination circuit can be electrically coupled to the power amplifier output external to a power amplifier die via different output pins of the power amplifier die.

Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: A radio frequency (RF) module comprises a conductive top layer configured to improve RF interference-shielding functionality with respect to one or more RF devices disposed on the module. The conductive top layer may be segmented as to form one or more segments of the top layer that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated, top conductive layers correspond to different devices of the module. The top layer may be etched or cut to achieve such segmentation.

Abstract: A radio frequency (RF) module comprises RF-shielding structure for providing three-dimensional electromagnetic interference shielding with respect to one or more RF devices disposed on the module. The RF-shielding may comprise wirebond structures disposed adjacent to or surrounding an RF device. Two or more intramodule devices may have wirebond structures configured to at least partially block certain types of RF signals disposed between the devices, thereby reducing effects of cross-talk between the devices.

Abstract: Disclosed are systems, devices and methods related to scanners that can be utilized for multiple electrical and/or magnetic field measurements at different locations of a radio-frequency (RF) module. In some embodiments, a scanning system can include a miniature probe such as a magnetic probe, a fixture system configured to hold a device under test (DUT) such as an RF module, an operating system configured to operate the DUT, and a measurement system configured to obtain field strength measurements through the miniature probe at different locations of the DUT. Such measurements can yield a near-field distribution over a plurality of selected areas of the DUT, with each of the selected areas being smaller than an overall lateral area of the DUT. In some implementations, such a scanning system can be utilized to facilitate applications such as electromagnetic (EM) shielding designs.

Abstract: Disclosed are systems, devices and methods related to miniature probes that can be utilized for electrical and/or magnetic field strength measurements for areas that are smaller than an area of a radio-frequency (RF) module. In some embodiments, an electrical probe can be configured to include an unshielded inner conductor at an end of a coaxial assembly to allow an electrical field to induce differential-mode currents in the coaxial assembly. In some embodiments, a magnetic probe can be configured to include a loop connected to inner and outer conductors of a coaxial assembly to induce a common mode current by a change in magnetic field flux through the loop. In some implementations, such probes can be utilized to obtain near-field measurements to facilitate applications such as electromagnetic (EM) shielding designs.

Abstract: Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of an RF isolation structure of a packaged module and the resulting RF isolation structures. Locations of where the racetrack can be adjusted (for example, narrowed) and/or removed without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, a portion of the racetrack can be removed to create a break and/or a portion of the racetrack can be narrowed in a selected area.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.