Abstract: A lower sheet disposed below a display panel includes a heat radiation layer having a first side and a second side facing the first side. A first film layer is disposed on the first side of the heat radiation layer. A second film layer is disposed on the second side of the heat radiation layer. A first resin layer is disposed between the heat radiation layer and the first film layer. A second resin layer is disposed between the heat radiation layer and the second film layer. A sealing layer is disposed on lateral sides of the heat radiation layer. The sealing layer directly contacts an entirety of the lateral sides of the heat radiation layer, and directly contacts at least a portion of lateral sides of the first resin layer and the second resin layer.

Abstract: An electronic device includes a memory controller having an improved operation speed. The memory controller includes a processor configured to generate commands for accessing data stored in a main memory, a scheduling circuit configured to store the commands and output the commands according to a preset criterion, and a filtering circuit configured to store information on an address of the main memory corresponding to a write command among the commands, provide a pre-completion response for the write command to the scheduling circuit upon receiving the write command, and provide the write command to the main memory.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: An operation method includes buffering data chunks to be programmed in the multi-level cells in a write buffer; backing up at least one backup data chunk of the data chunks to a backup memory; determining a program sequence of the data chunks, the program sequence for programming a non-backup data chunk among the data chunks to the multi-level cells through a second step program operation of the multi-step program operation; and controlling the memory device to program the data chunks in the multi-level cells, based on the program sequence, by performing first and second step program operations of the multi-step program operation in a first page of the multi-level cells, the second step program operation performed in the first page later than another first step program operation performed in a second page subsequent to the first page.

Abstract: A storage device having improved operation speed may include a main memory configured to store first to N-th meta data, a cache memory including first to N-th dedicated areas respectively corresponding to areas in which the first to N-th meta data are stored, and a processor configured to store data accessed according to requests provided from a host among the first to N-th meta data in the first to N-th dedicated areas, respectively. A size of the first to N-th dedicated areas may be determined according to the number of times each of the first to N-th meta data is accessed by the requests.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: The present technology relates to an electronic device. According to the present technology, a storage device having an improved operation speed may include a nonvolatile memory device, a main memory configured to temporarily store data related to controlling the nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device and the main memory under control of an external host. The main memory may aggregate and process a number of write transactions having continuous addresses, among write transactions received from the memory controller, equal to a burst length unit of the main memory.

Abstract: The present technology relates to an electronic device. According to the present technology, a storage device having an improved operation speed may include a nonvolatile memory device, a main memory configured to temporarily store data related to controlling the nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device and the main memory under control of an external host. The main memory may aggregate and process a number of write transactions having continuous addresses, among write transactions received from the memory controller, equal to a burst length unit of the main memory.

Abstract: A memory system includes: a nonvolatile memory device; a processor configured to generate a first map chunk including mapping information for accessing the nonvolatile memory device; a first error correction code (ECC) component configured to generate a first map codeword by adding a first parity bit to the first map chunk; a volatile memory configured to store the first map codeword; a second ECC component configured to generate first map data by performing decoding on the first map codeword that is outputted from the volatile memory and bypasses the first ECC component when the memory system is powered off; and a direct memory access (DMA) component configured to provide the first map data to the nonvolatile memory device.

Abstract: A data storage device includes a storage, a buffer memory, and a controller. The controller is configured to control at least one of an input of data to and an output of data from the storage in response to a request transmitted from a host device. The controller is also configured to receive write data transmitted from the host device and cached in the buffer memory, encrypt the write data, and store the encrypted write data in the storage. The controller is further configured to receive read data read from the storage and cached in the buffer memory, decrypt the read data, and provide the decrypted read data to the host device.

Abstract: Embodiments of the disclosed technology relate to a memory system and an operating method thereof. According to the embodiments of the disclosed technology, the memory system may check N flag sets corresponding to N cache lines configured to cache map data,—Each flag set includes M flags, each flag indicating whether or not a cache hit for indicating a particular piece of data being stored in the map cache has been made for each of the M data units included in a corresponding cache line—may check target map data based on a number of flags indicating the cache hit for a corresponding data unit and included in the first flag set corresponding to the first cache line among the N cache lines.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: The present technology relates to an electronic device. According to the present technology, a storage device having an improved operation speed may include a nonvolatile memory device, a main memory configured to temporarily store data related to controlling the nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device and the main memory under control of an external host. The main memory may aggregate and process a number of write transactions having continuous addresses, among write transactions received from the memory controller, equal to a burst length unit of the main memory.

Abstract: Provided is a gas diffusion layer, in which a microporous layer has an inner wall of through passages and a region adjacent to the through passages containing a greater amount of a water-repellent binder resin than a region not adjacent to the through passages, and thus water formed by an electrochemical reaction is effectively discharged from the gas diffusion layer. When the gas diffusion layer of the present invention is used, an optimal water management may be possible for smooth operation under all humidity conditions including a high humidity condition and a low humidity condition, and thus a fuel cell having improved cell performance may be obtained.

Abstract: Disclosed are a memory system, a memory controller, and a method of operating the memory system. The memory system may configure a plurality of map cache pools for caching map data of different types, respectively, within a map cache in which the map data is cached, configure a timer in a first map cache pool among the plurality of map cache pools, and write map data cached in the first map cache pool in the memory device based on the timer.

Abstract: A controller, a memory system and an operating method thereof are disclosed. The controller controls a nonvolatile memory device and the nonvolatile memory includes a first memory module configured to store a plurality of pieces of map data read from the nonvolatile memory device; and a second memory module configured to cache map data having locality among map data received from the first memory module.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method thereof. According to the embodiments of the present disclosure, the memory system may store target data to be programmed in a memory device in a first memory, selectively store the target data in a second memory, program the target data stored in the first memory into the memory device, and reprogram the target data stored in the first memory or the second memory into the memory device when the programming of the target data stored in the first memory into the memory device fails. The buffer circuit may input the target data input from the memory controller into the second memory or discard the target data.

Abstract: The present technology relates to an electronic device. According to the present technology, a storage device having an improved operation speed may include a nonvolatile memory device, a main memory configured to temporarily store data related to controlling the nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device and the main memory under control of an external host. The main memory may aggregate and process a number of write transactions having continuous addresses, among write transactions received from the memory controller, equal to a burst length unit of the main memory.

Abstract: A controller for controlling a memory device is provided to include: a request receiver configured to receive a request including a logical address from a host; a dependency checker configured to acquire the request from the request receiver and check a dependency of the request; a map manager configured to generate a command including a physical address mapped to the logical address of the request in response to a result of checking that the request has no dependency on the prior incomplete request; and a command submitter configured to provide the memory device with the command generated by the map manager, wherein the request receiver, the dependency checker, the map manager and the command submitter are structured to configure a data pipeline such that operations of the request receiver, the dependency checker, the map manager, and the command submitter deliver are performed in series.

Abstract: A backlight unit includes a light source array including at least one light source which emits light and a circuit board on which the light source is disposed, and a first optical layer disposed on the light source array. The first optical layer includes a first layer which defines at least one concave portion in a bottom of the first layer, where the at least one concave portion is coupled to the light source, a second layer disposed on the first layer, the second layer guiding light incident from the first layer in one direction, a plurality of optical patterns disposed on one surface of the second layer, the plurality of optical patterns selectively emitting light passing through the one surface, and a reflective layer disposed on the bottom of the first layer.