Abstract: A lighting device includes a heat sink including a first heat radiation part and a second heat radiation part; a light source module including a substrate disposed on the first heat radiation part, and a light emitting device disposed on the substrate; and a power supply unit which is disposed within the second heat radiation part and supplies power to the light source module. The second heat radiation part includes an inner portion receiving the power supply unit therewithin, an outer portion enclosing the inner portion, and a first receiver disposed between the inner portion and the outer portion. The first heat radiation part includes an upper portion which is disposed on the inner portion of the second heat radiation part and on which the substrate of the light source module is disposed, and a lower portion disposed in the first receiver of the second heat radiation part.

Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

Abstract: There is provided a red phosphor including a compound represented by an empirical formula Az(Sr,M)2(Si,Al)O4-xNy:R(0<x<3, y=2x/3, and 0.0001?z<0.1), and has a grain size distribution corresponding to 6.9 ?m?D50?13.9 ?m, wherein M and Al are optional, A is at least one element selected from a group consisting of lithium (Li), potassium (K) and sodium (Na), and M is at least one element selected from a group consisting of Barium (Ba), magnesium (Mg) and calcium (Ca).

Abstract: An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.

Abstract: An image sensor includes a light receiving section suitable for generating photocharges corresponding to incident light, a first driving section suitable for transferring a first output voltage corresponding to a first voltage to a first column line based on the photocharges, a second driving section suitable for transferring a second output voltage corresponding to a second voltage to a second column line based on the photocharges, and an output section suitable for outputting an image signal based on the first and second output voltages.

Abstract: A multimodal sensor includes first conductive electrodes that are arranged in parallel with one another, being spaced from one another by a certain distance, an insulating layer that is formed on the first conductive electrodes, second conductive electrodes that are formed on the insulating layer, crossing the first conductive electrodes, and are arranged in parallel with one another, being spaced from one another, and a controller that applies voltages to the first and second conductive electrodes. The controller detects capacitance formed between the first and second conductive electrodes, and senses an external temperature, intensity of a pressure or a position, to which a pressure is applied, in response to a variation of the capacitance.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: A lighting device may be provided to include a heat sink which includes a receiving recess and a top surface including a hole; a light source module which includes a substrate disposed on the heat sink, a light emitting device disposed on the substrate and a pad disposed on the substrate; a power supplier which is disposed in the receiving recess of the heat sink and includes a projection outputting a power signal for driving the light source module; and a connector which is coupled to the hole of the heat sink, includes a contacting part electrically connected to the pad of the light source module, and is electrically connected to the projection of the power supplier.

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Abstract: A lighting device may be provided to include a heat sink which includes a receiving recess and a top surface including a hole; a light source module which includes a substrate disposed on the heat sink, a light emitting device disposed on the substrate and a pad disposed on the substrate; a power supplier which is disposed in the receiving recess of the heat sink and includes a projection outputting a power signal for driving the light source module; and a connector which is coupled to the hole of the heat sink, includes a contacting part electrically connected to the pad of the light source module, and is electrically connected to the projection of the power supplier.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: An image sensor includes a photoelectric conversion element suitable for generating photocharges corresponding to incident light, a transfer transistor suitable for transferring the generated photocharges to a floating diffusion node based on a transfer signal, and a reset transistor suitable for resetting the floating diffusion node based on a reset signal and including a memory gate.

Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.

Abstract: An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.

Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.

Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.

Abstract: An image sensor includes a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer which is formed over the active pixel array, and including a hafnium oxide layer with a high transmittance; and a second anti-reflective layer which is formed over the optical black pixel array, and including a hafnium oxide layer with a low transmittance.

Abstract: A cooling system for a bus may include a heat dissipating plate mounted on a roof panel of a top of a bus and cooling heated fluid with wind, and an actuator connected to an air tank, selectively actuating the heat dissipating plate and adjusting an inclination angle between the heat dissipating plate and the roof panel.