Abstract: A method for making a semiconductor device is described. That method comprises forming a carbon doped oxide containing layer and a dielectric layer on a substrate, such that at least part of the dielectric layer is located above at least part of the carbon doped oxide containing layer. A chemical mechanical polishing process is then applied to remove the part of the dielectric layer that is located above the part of the carbon doped oxide containing layer, such that it removes the dielectric layer at a significantly faster rate than it can remove the carbon doped oxide containing layer.

Abstract: A method of forming a semiconductor device is described. In that method, a masking layer is formed on a substrate. A layer of photoresist is then deposited and patterned on that layer to expose a first part of the masking layer while covering a second part of the masking layer. After the exposed part of that layer is etched, the resulting device is exposed to a plasma generated from a forming gas. Part of the second part of the masking layer is then removed by exposing the resulting device to a solution, while part of the second part of the masking layer is retained.

Abstract: A low dielectric constant material having a first fluorine concentration in a near-surface portion and a second fluorine concentration in an interior portion provides an insulator suitable for use in integrated circuits. In a further aspect of the present invention, fluorine is depleted from a near-surface portion of a fluorine containing dielectric material by a reducing plasma. Fluorine in fluorinated low-k dielectric materials, such as SiOF, amorphous fluorinated carbon (a-F:C) and parylene-AF4, can react with surrounding materials such as metals and Si3N4, causing blisters and delamination. Treatment of these fluorinated low-k dielectric materials in a reducing plasma, which may be produced from precursor gases such as H2 or NH3, depletes the surface region of fluorine and hence reduces reaction with surrounding materials and F outgassing. By selecting an appropriate point in the integration flow, specific interfaces which are most susceptible to F-attack can be targeted for depletion.

Abstract: A method of forming a semiconductor device is described comprising forming a first patterned conductive layer on a dielectric on a substrate. A first barrier layer comprising silicon nitride is formed on the surface of the first patterned conductive layer, followed by forming a second barrier layer comprising silicon carbide on the surface of the first barrier layer. Using standard lithographic techniques a via and a trench are formed to the surface of the conductive layer.

Abstract: The present invention describes a structure having a multilayer stack of thin films, the thin films being a low-dielectric constant material, the thin films having pores, and a method of forming such a structure.

Abstract: A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

Abstract: Carbon doped oxide (CDO) deposition. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.

Abstract: A method for making a semiconductor device is described. That method comprises forming a carbon doped oxide containing layer and a dielectric layer on a substrate, such that at least part of the dielectric layer is located above at least part of the carbon doped oxide containing layer. A chemical mechanical polishing process is then applied to remove the part of the dielectric layer that is located above the part of the carbon doped oxide containing layer, such that it removes the dielectric layer at a significantly faster rate than it can remove the carbon doped oxide containing layer.

Abstract: A process for forming an interlayer dielectric layer is disclosed. The method comprises first forming a carbon-doped oxide (CDO) layer with a first concentration of carbon dopants therein. Next, the CDO layer is further formed with a second concentration of carbon dopants therein, wherein the first concentration is different than the second concentration.

Abstract: A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

Abstract: A method of forming a semiconductor device is described. In that method, a masking layer is formed on a substrate. A layer of photoresist is then deposited and patterned on that layer to expose a first part of the masking layer while covering a second part of the masking layer. After the exposed part of that layer is etched, the resulting device is exposed to a plasma generated from a forming gas. Part of the second part of the masking layer is then removed by exposing the resulting device to a solution, while part of the second part of the masking layer is retained.

Abstract: A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4-x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.

Abstract: A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4−x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.

Abstract: An improved method of forming a semiconductor device is described. In that method, a dielectric layer that comprises a carbon doped oxide is formed on a substrate. After a first etched region is formed in the dielectric layer, that region is filled with a sacrificial light absorbing material. A layer of photoresist is then deposited and patterned, followed by forming a second etched region by removing part of the sacrificial light absorbing material and a second part of the dielectric layer. Remaining portions of the photoresist are then removed by exposing the resulting device to a plasma generated from a forming gas. The device is then exposed to a solution for removing the remaining portions of the sacrificial light absorbing material.

Abstract: A method of forming an interlayer dielectric on a semiconductor device is disclosed. First, a phosphorous doped oxide layer is deposited on the semiconductor device to fill gaps and provide phosphorous for gettering. Then, an undoped oxide layer is deposited and planarized using chemical mechanical polishing (CMP). The undoped oxide layer is denser than the phosphorous doped oxide layer, so the undoped oxide layer can be polished more uniformly than the phosphorous doped oxide layer and can serve as a polish stop for a subsequent tungsten plug polish. Also, the denser undoped oxide layer serves as a more effective moisture barrier than the doped oxide layer. Overall fabrication process complexity can be reduced by performing both oxide depositions in a single operation with no intervening densification or CMP steps.

Abstract: A dual gate transistor device and method for fabricating the same. First, a doped substrate is prepared with a patterned oxide layer on the doped substrate defining a channel. Next, a silicon layer is deposited to form the channel, with a gate oxide layer then grown adjacent the channel. Subsequently, a plurality of gate electrodes are formed next to the gate oxide layer and a drain is formed on the channel. After the drain is formed, an ILD layer is deposited. This ILD layer is etched to form a source region contact, a drain region contact, a first gate electrode contact, and a second gate electrode contact.

Abstract: A method for modifying the hydrophobicity of the surface of a carbon-doped oxide film is disclosed. Carbon-doped oxide films have exhibited a high hydrophobic nature which inhibits effective cleaning of its surface by conventional techniques. The present invention uses a surface treatment comprising a solution of sulfuric acid and hydrogen peroxide in water to alter the hydrophobicity of the carbon-doped oxide. After treatment by the sulfuric acid and hydrogen peroxide solution, the surface of the carbon-doped oxide becomes hydrophilic. Moreover, the modification of the carbon-doped oxide only occurs at the surface. Therefore, the low k dielectric characteristics of the carbon-doped oxide are retained.

Abstract: An improved semiconductor device and method for making it. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.