Abstract: This disclosure provides circuits and methods for resetting a movable element, such as a mirror of an interferometric modulator (IMOD), to a consistent starting point or reset position. In one example, a circuit may include three electrodes with a capacitor coupled between two of the electrodes. Additionally, the polarity of one of the electrodes may be configured to switch and reverse in polarity relative to another electrode. Accordingly, the movable element may be moved to a reset position.

Abstract: This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.

Abstract: This disclosure provides systems, methods, and apparatus for an electromechanical systems (EMS) device with one or more protrusions connected to a surface of the EMS device. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, and a movable electrode over the stationary electrode. The movable electrode is configured to move to three or more positions across a gap by electrostatic actuation between the movable electrode and the stationary electrode. When the protrusions contact any surface of the EMS device at one of the positions across the gap, the protrusions change the stiffness of the EMS device. At least one of the surfaces in contact with the one or more protrusions is non-rigid. In some implementations, the protrusions have a height greater than about 20 nm.

Abstract: This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.

Abstract: This disclosure provides systems, methods and apparatus for an electromechanical systems display device. In one aspect, a grey scale electromechanical systems display device may include a reflector assembly disposed on a support dielectric layer, a substrate, and an absorber assembly. The absorber assembly may include a metal layer. The absorber assembly may be configured to move to a first position defining a first cavity between the absorber assembly and the substrate such that the device reflects a white light. The absorber assembly also may be configured to move to a second position defining a second cavity between the absorber assembly and the reflector assembly such that the device substantially does not reflect light.

Abstract: A layer of optically active material overlaps the mode filed of a single mode optical waveguide and has regions to which electric fields can be applied by way of respective electrodes so as to vary the refractive index of the layer in those regions. The regions are spaced apart longitudinally of the waveguide, and the fields are so arranged that they extend at different angles to an interface between the waveguide and the layer and act sequentially upon different polarisation components of radiation propagating along the waveguide. In one arrangement, the fields are orthogonal to one another. In an alternative arrangement, the third field can be applied to a further longitudinally-spaced region of the layer and the three fields are arranged at 120 degrees to one another.