Patents by Inventor Edward Sargent
Edward Sargent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8274126Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 19, 2011Date of Patent: September 25, 2012Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8269302Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 22, 2011Date of Patent: September 18, 2012Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8269260Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 22, 2011Date of Patent: September 18, 2012Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120208315Abstract: Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.Type: ApplicationFiled: February 8, 2012Publication date: August 16, 2012Applicant: InVisage Technologies, Inc.Inventors: Edward Sargent, Steve McDonald, Shiquo Zhang, Larissa Levina, Gerasimos Konstantatos, Paul Cyr
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Patent number: 8213212Abstract: In an example embodiment, an optical device includes an integrated circuit, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region. In another example embodiment, a method of forming a nanocrystalline film includes fabricating nanocrystals having a plurality of first ligands attached to their outer surfaces, exchanging the first ligands for second ligands of a different chemical composition, forming a film of the ligand-exchanged nanocrystals, removing the second ligands, and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. In another example embodiment, a film includes a network of fused nanocrystals with at least portions of the fused nanocrystals being in direct physical contact with adjacent nanocrystals, the film having substantially no defect states in regions where cores of the nanocrystals are fused.Type: GrantFiled: September 23, 2011Date of Patent: July 3, 2012Assignee: InVisage Technologies, Inc.Inventors: Edward Sargent, Gerasimos Konstantatos, Larissa Levina, Ian Howard, Ethan J. D. Klem, Jason Clifford
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Publication number: 20120145884Abstract: Various embodiments include apparatuses including optical and optoelectronic devices and methods of making same. One such device includes an image sensor having an integrated circuit with a number of pixel electrodes, a substantially-continuous optically-sensitive layer, and at least one counter-electrode. The substantially continuous optically sensitive layer is in electrical communication with both the number of pixel electrodes and also the counter-electrode. Additional apparatuses and methods are disclosed.Type: ApplicationFiled: December 12, 2011Publication date: June 14, 2012Inventors: Edward Sargent, Jason Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J.D. Klem, Larissa Levina
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Publication number: 20120100699Abstract: In an example embodiment, an optical device includes an integrated circuit, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region. In another example embodiment, a method of forming a nanocrystalline film includes fabricating nanocrystals having a plurality of first ligands attached to their outer surfaces, exchanging the first ligands for second ligands of a different chemical composition, forming a film of the ligand-exchanged nanocrystals, removing the second ligands, and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. In another example embodiment, a film includes a network of fused nanocrystals with at least portions of the fused nanocrystals being in direct physical contact with adjacent nanocrystals, the film having substantially no defect states in regions where cores of the nanocrystals are fused.Type: ApplicationFiled: September 23, 2011Publication date: April 26, 2012Applicant: InVisage Technologies, Inc.Inventors: Edward Sargent, Gerasimos Konstantatos, Larissa Levina, Ian Howard, Ethan J.D. Klem, Jason Clifford
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Publication number: 20120056289Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 25, 2011Publication date: March 8, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120056075Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 25, 2011Publication date: March 8, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120056160Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 26, 2011Publication date: March 8, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120056074Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 22, 2011Publication date: March 8, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120056076Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 26, 2011Publication date: March 8, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120049311Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 26, 2011Publication date: March 1, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120049045Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 24, 2011Publication date: March 1, 2012Inventors: Hui Tian, Edward Sargent
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Publication number: 20120043455Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 24, 2011Publication date: February 23, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120037789Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 12, 2011Publication date: February 16, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20120037887Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: August 22, 2011Publication date: February 16, 2012Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8115232Abstract: The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional bicontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer.Type: GrantFiled: January 9, 2006Date of Patent: February 14, 2012Assignee: InVisage Technologies, Inc.Inventors: Edward Sargent, Steve McDonald, Shiguo Zhang, Larissa Levina, Gerasimos Konstantatos, Paul Cyr
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Patent number: 8102693Abstract: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals.Type: GrantFiled: August 6, 2010Date of Patent: January 24, 2012Assignee: InVisage Technologies, Inc.Inventors: Edward Sargent, Jason Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina
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Publication number: 20110315959Abstract: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals.Type: ApplicationFiled: September 7, 2011Publication date: December 29, 2011Applicant: InVisage Technologies, Inc.Inventors: Edward Sargent, Gerasimos Konstantatos, Larissa Levina, Ian Howard, Ethan J.D. Klem, Jason Clifford