Abstract: In various embodiments, a time-delay-and-integrate (TDI) image sensor includes (i) a plurality of integrating CCDs (ICCDs), arranged in parallel, that accumulate photocharge in response to exposure to light, (ii) electrically coupled to the plurality of ICCDs, a readout CCD (RCCD) for receiving photocharge from the plurality of ICCDs, and (iii) electrically coupled to the RCCD, readout circuitry for converting charge received from the RCCD into voltage.

Abstract: An integrated circuit includes a device identification circuit and a temperature sensor diode connected in parallel from a common node. The device identification circuit includes a resistor connected to a diode-connected transistor. The device identification circuit and the temperature sensor diode are adapted to not be simultaneously operating in an ON state. A first voltage is applied to the common node to place the device identification circuit in an ON state and place the temperature sensor diode in an OFF state to identify the integrated circuit. A second voltage is applied to the common node to place the device identification circuit in an OFF state and place the temperature sensor diode in an ON state to determine a temperature of the integrated circuit.

Abstract: An integrated circuit includes a device identification circuit and a temperature sensor diode connected in parallel from a common node. The device identification circuit includes a resistor connected to a diode-connected transistor. The device identification circuit and the temperature sensor diode are adapted to not be simultaneously operating in an ON state. A first voltage is applied to the common node to place the device identification circuit in an ON state and place the temperature sensor diode in an OFF state to identify the integrated circuit. A second voltage is applied to the common node to place the device identification circuit in an OFF state and place the temperature sensor diode in an ON state to determine a temperature of the integrated circuit.

Abstract: In various embodiments, image sensors include photosensitive pixels, associated vertical CCDs, sense nodes each accepting charge from one or more of the vertical CCDs, and readout circuitry accepting signals from the sense nodes.

Abstract: In various embodiments, a time-delay-and-integrate (TDI) image sensor includes (i) a plurality of integrating CCDs (ICCDs), arranged in parallel, that accumulate photocharge in response to exposure to light, (ii) electrically coupled to the plurality of ICCDs, a readout CCD (RCCD) for receiving photocharge from the plurality of ICCDs, and (iii) electrically coupled to the RCCD, readout circuitry for converting charge received from the RCCD into voltage.

Abstract: A system for managing voice and data communications for at least one user is coupled to at least one wide area telecommunications network and includes at least a processor and data storage resources. A first bus is adapted to couple video data between the system and a video unit coupled to the system under control of the processor. A second bus is adapted to couple audio data between the system and a microphone unit coupled to the system under control of the processor, and audio data are coupled to a TDM bus in the system operating under control of the processor. A digital transmission link of the wide area telecommunications network couples the video and audio data from the system, under control of the processor. A user participates in a video call with the video data, while concurrently the user participates in a telephone call with the audio data.

Abstract: A Charge-Coupled Device (CCD) image sensor includes a linear array of photodetectors. The photodetectors in the linear array are arranged into distinct sub-arrays with each sub-array including two or more photodetectors. An output channel is connected to each sub-array of photodetectors. Each output channel includes a horizontal CCD shift register and an output structure connected to an end of the horizontal CCD shift register in a linear arrangement with respect to each other. Each successive output channel is disposed on an alternate side of the linear array. Every other output channel is disposed on an alternate side of the linear array. One or more dark reference pixels can be connected to one or more additional shift register elements in the horizontal CCD shift registers.

Abstract: A Charge-Coupled Device (CCD) image sensor includes a linear array of photodetectors. The photodetectors in the linear array are arranged into distinct sub-arrays with each sub-array including two or more photodetectors. An output channel is connected to each sub-array of photodetectors. Each output channel includes a horizontal CCD shift register and an output structure connected to an end of the horizontal CCD shift register in a linear arrangement with respect to each other. Each successive output channel is disposed on an alternate side of the linear array. Every other output channel is disposed on an alternate side of the linear array. One or more dark reference pixels can be connected to one or more additional shift register elements in the horizontal CCD shift registers.

Abstract: An integrated circuit includes a device identification circuit and a temperature sensor diode connected in parallel from a common node. The device identification circuit includes a resistor connected to a diode-connected transistor. The device identification circuit and the temperature sensor diode are adapted to not be simultaneously operating in an ON state. A first voltage is applied to the common node to place the device identification circuit in an ON state and place the temperature sensor diode in an OFF state to identify the integrated circuit. A second voltage is applied to the common node to place the device identification circuit in an OFF state and place the temperature sensor diode in an ON state to determine a temperature of the integrated circuit.

Abstract: An integrated circuit includes a device identification circuit and a temperature sensor diode connected in parallel from a common node. The device identification circuit includes a resistor connected to a diode-connected transistor. The device identification circuit and the temperature sensor diode are adapted to not be simultaneously operating in an ON state. A first voltage is applied to the common node to place the device identification circuit in an ON state and place the temperature sensor diode in an OFF state to identify the integrated circuit. A second voltage is applied to the common node to place the device identification circuit in an OFF state and place the temperature sensor diode in an ON state to determine a temperature of the integrated circuit.

Abstract: In various embodiments, image sensors include photosensitive pixels, associated vertical CCDs, sense nodes each accepting charge from one or more of the vertical CCDs, and readout circuitry accepting signals from the sense nodes.

Abstract: A system for managing voice and data communications for at least one user is coupled to at least one wide area telecommunications network and includes at least a processor and data storage resources. A first bus is adapted to couple video data between the system and a video unit coupled to the system under control of the processor. A second bus is adapted to couple audio data between the system and a microphone unit coupled to the system under control of the processor, and audio data are coupled to a TDM bus in the system operating under control of the processor. A digital transmission link of the wide area telecommunications network couples the video and audio data from the system, under control of the processor. A user participates in a video call with the video data, while concurrently the user participates in a telephone call with the audio data.

Abstract: A Charge-Coupled Device (CCD) image sensor includes a linear array of photodetectors. The photodetectors in the linear array are arranged into distinct sub-arrays with each sub-array including two or more photodetectors. An output channel is connected to each sub-array of photodetectors. Each output channel includes a horizontal CCD shift register and an output structure connected to an end of the horizontal CCD shift register in a linear arrangement with respect to each other. Each successive output channel is disposed on an alternate side of the linear array. Every other output channel is disposed on an alternate side of the linear array. One or more dark reference pixels can be connected to one or more additional shift register elements in the horizontal CCD shift registers.

Abstract: A system for managing voice and data communications coupled to a wide area telecommunications network. Video data is coupled between the system and a video unit under control of a processor. Audio data is coupled between the system and a microphone unit under control of the processor. The audio data are coupled to a TDM bus in the system operating under control of the processor. The video and audio data are coupled to a digital transmission link of the wide area telecommunications network. A user participates in a video call with the video data, while concurrently the user participates in a telephone call with the audio data. Voice communications of the telephone call that stay in a circuit-switched form are provided via the TDM bus. The video call and the telephone call provide a conference call.

Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.

Abstract: A Charge-Coupled Device (CCD) image sensor includes a linear array of photodetectors. The photodetectors in the linear array are arranged into distinct sub-arrays with each sub-array including two or more photodetectors. An output channel is connected to each sub-array of photodetectors. Each output channel includes a horizontal CCD shift register and an output structure connected to an end of the horizontal CCD shift register in a linear arrangement with respect to each other. Each successive output channel is disposed on an alternate side of the linear array. Every other output channel is disposed on an alternate side of the linear array. One or more dark reference pixels can be connected to one or more additional shift register elements in the horizontal CCD shift registers.

Abstract: A Charge-Coupled Device (CCD) image sensor includes a linear array of photodetectors. The photodetectors in the linear array are arranged into distinct sub-arrays with each sub-array including two or more photodetectors. An output channel is connected to each sub-array of photodetectors. Each output channel includes a horizontal CCD shift register and an output structure connected to an end of the horizontal CCD shift register in a linear arrangement with respect to each other. Each successive output channel is disposed on an alternate side of the linear array. Every other output channel is disposed on an alternate side of the linear array. One or more dark reference pixels can be connected to one or more additional shift register elements in the horizontal CCD shift registers.

Abstract: A method for lowering dark current in an image sensor pixel, the method includes the steps of providing a photosensitive area for receiving incident light which is converted into a charge; providing a gate for transferring charge from the photosensitive area; wherein the gate is held at a voltage which will accumulate majority carriers at a semiconductor-dielectric interface during integration for the photosensitive area. Alternatively, a potential profile can be provided under the gate to drain the dark current away from the photogeneration diffusion.

Abstract: Systems and methods by which voice/data communications may occur in multiple modes/protocols are disclosed. In particular, systems and methods are provided for multiple native mode/protocol voice and data transmissions and receptions with a computing system having a multi-bus structure, including, for example, a TDM bus and a packet bus, and multi-protocol framing engines. Such systems preferably include subsystem functions such as PBX, voice mail and other telephony functions, LAN hub and data router. In preferred embodiments, a TDM bus and a packet bus are intelligently bridged and managed, thereby enabling such multiple mode/protocol voice and data transmissions to be intelligently managed and controlled with a single, integrated system. A computer or other processor includes a local area network controller, which provides routing and hub(s) for one or more packet networks. The computer also is coupled to a buffer/framer, which serves to frame/deframe data to/from the computer from TDM bus.

Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.