Abstract: A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.

Abstract: This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

Abstract: According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.

Abstract: A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.

Abstract: A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.

Abstract: A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

Abstract: A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

Abstract: A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.

Abstract: A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.

Abstract: A template having a first recess pattern is brought into contact with a mask material formed on a substrate. The mask material with which the first recess pattern is filled is cured. A mask material pattern is formed on the substrate by releasing the template from the mask material. A resist pattern is formed to cover a part of the mask material pattern by forming a resist on the mask material pattern and selectively irradiating radiation onto the resist and thereafter developing the resist. The substrate is processed by using the mask material pattern and the resist pattern as a mask.

Abstract: An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

Abstract: A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.

Abstract: According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.

Abstract: Provided is a method of forming a resist pattern capable of forming a resist pattern, whose dimensional variations and defects are reduced as far as possible, with a high throughput. The invention provides a method of forming a resist pattern involving the following: forming a resist film on a substrate; subjecting the resist film to exposure treatment in a pressure-reduced condition after performing pressure-reducing treatment; performing reduced-pressure releasing treatment that releases the resist film from a pressure-reduced condition while humidifying the resist film by introducing a humidity-adjusted gas into the pressure-reduced environment; performing bake treatment that heats the resist film after the reduced-pressure releasing treatment; and developing the resist film.

Abstract: A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.

Abstract: In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.

Abstract: A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.