Patents by Inventor Eishi Shiobara

Eishi Shiobara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a pattern
    Patent number: 6420271
    Abstract: A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.
    Type: Grant
    Filed: March 23, 2001
    Date of Patent: July 16, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiko Sato, Eishi Shiobara, Motoyuki Sato, Yasunobu Onishi, Hiroshi Tomita, Tokuhisa Ohiwa, Junko Ohuchi, Hisataka Hayashi
  • Method of forming a pattern
    Publication number: 20010034131
    Abstract: A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.
    Type: Application
    Filed: March 23, 2001
    Publication date: October 25, 2001
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiko Sato, Eishi Shiobara, Motoyuki Sato, Yasunobu Onishi, Hiroshi Tomita, Tokuhisa Ohiwa, Junko Ohuchi, Hisataka Hayashi
  • Method of forming pattern
    Patent number: 6270948
    Abstract: A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
    Type: Grant
    Filed: June 7, 1999
    Date of Patent: August 7, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiko Sato, Yoshihiko Nakano, Rikako Kani, Shuji Hayase, Yasunobu Onishi, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Masaki Narita, Sawako Yoshikawa