Abstract: A method and apparatus for enhancing image contrast between resist-covered and bare silicon regions of a wafer, applicable to Edge Bead Removal inspection. The wafer is illuminated separately by s-polarized light and p-polarized light impinging at near the Brewster angle of silicon or resist, and an image difference between the reflected s-polarized light and the reflected p-polarized light is derived.

Abstract: An illumination delivery system provides a spatially and angularly uniform shaped beam output with sufficient intensity to illuminate a sample surface for defect inspection. Light is transmitted through a shaped fiber optic bundle, a homogenizer, a diffuser, and an optional focusing optics system.

Abstract: A method for inspecting semiconductor wafers is provided in which a plurality of independent, low-cost, optical-inspection subsystems are packaged and integrated to simultaneously perform parallel inspections of portions of the wafer, the wafer location relative to the inspection being controlled so that the entire wafer is imaged by the system of optical subsystems in a raster-scan mode. A monochromatic coherent-light source illuminates the wafer surface. A darkfield-optical system collects scattered light and filters patterns produced by valid periodic wafer structures using Fourier filtered. The filtered light is processed by general purpose digital-signal processors. Image subtraction methods are used to detect wafer defects, which are reported to a main computer to aid in statistical process control, particularly for manufacturing equipment.

Abstract: Systems and methods for contact image sensor based inspection of specimens are provided. A system configured to inspect a specimen may include a contact image sensor. The contact image sensor may include a light source configured to direct light toward a surface of the specimen and a linear sensor array configured to detect light returned from the surface. The system may further include a processor configured to determine a presence of defects on the surface using the detected light. A method for inspecting the specimen may include directing light from a light source toward a surface of the specimen and detecting light returned from the surface using a linear sensor array. The light source and the linear sensor array may be arranged in a contact image sensor. The method may further include determining a presence of defects on the surface from the detected light.

Abstract: A method for inspecting semiconductor wafers is provided in which a plurality of independent, low-cost, optical-inspection subsystems are packaged and integrated to simultaneously perform parallel inspections of portions of the wafer, the wafer location relative to the inspection being controlled so that the entire wafer is imaged by the system of optical subsystems in a raster-scan mode. A monochromatic coherent-light source illuminates the wafer surface. A darkfield-optical system collects scattered light and filters patterns produced by valid periodic wafer structures using Fourier filtering. The filtered light is processed by general purpose digital-signal processors. Image subtraction methods are used to detect wafer defects, which are reported to a main computer to aid in statistical process control, particularly for manufacturing equipment.

Abstract: A method and apparatus for measuring the temperature profile of a surface exhibiting spatial and/or temporal variations in temperature, e.g., the surface of a machine or a biological system, is disclosed. The inventive method involves forming a layer of chemiluminescent material in thermal contact with the surface. The chemiluminescent activity is selected to be a function of temperature by suitable dye choices. The resulting luminescence is detected.

Abstract: An optical emission microscopy system with a macro optic system having a high numerical aperture for obtaining global views of an integrated circuit Device Under Test (DUT). The DUT is subjected to illumination and stimulation conditions, and images are obtained to form a "global difference" image in which defects, wherever located in the chip, can be discerned by the system operator. The operator can select apparent "defect bright spots" to be further inspected, and zoom in with the higher magnification micro optics system to repeat the image formation steps. "Difference images" are processed to further eliminate noise spots using an improved two-stage filtering operation. The system may be operated under manual or automatic control, and may be interfaced to various data input, storage, and output devices as desired.