Patents by Inventor Eller Y. Juco
Eller Y. Juco has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984298Abstract: An apparatus for providing signals to a device may include one or more radio frequency signal generators, and electrically-small transmission line, which coupled signals from the one or more RF signal generators to a fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.Type: GrantFiled: December 2, 2020Date of Patent: May 14, 2024Assignee: Lam Research CorporationInventors: Eller Y. Juco, Thomas Lee Frederick, Karl Frederick Leeser, Paul Konkola
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Publication number: 20230245853Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.Type: ApplicationFiled: February 24, 2023Publication date: August 3, 2023Inventors: Eller Y. Juco, Karl Frederick Leeser, David French, Sunil Kapoor, Aaron Bingham, David Alan Metz, Brett Herzig, Jacob L. Hiester, Brian Knight
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Patent number: 11594397Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.Type: GrantFiled: March 17, 2021Date of Patent: February 28, 2023Assignee: Lam Research CorporationInventors: Eller Y. Juco, Karl Frederick Leeser, David French, Sunil Kapoor, Aaron Bingham, David Alan Metz, Brett Herzig, Jacob L. Hiester, Brian Knight
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Patent number: 11557460Abstract: A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.Type: GrantFiled: July 8, 2019Date of Patent: January 17, 2023Assignee: Lam Research CorporationInventors: Eller Y. Juco, Karl Frederick Leeser, Huatan Qiu
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Publication number: 20220415616Abstract: An apparatus for providing signals to a device may include one or more radiofrequency signal generators, and electrically-small transmission line, which couples signals from the one or more RF signal generators to the fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.Type: ApplicationFiled: December 2, 2020Publication date: December 29, 2022Applicant: Lam Research CorporationInventors: Eller Y. Juco, Thomas Lee Frederick, Karl Frederick Leeser, Paul Konkola
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Publication number: 20220190854Abstract: An apparatus and method for performing closed-loop multiple-output control of radio frequency (RF) matching for a semiconductor wafer fabrication process is provided. An apparatus for providing signals to a station of a process chamber performs semiconductor fabrication processes. A plurality of signal generators generates signals having first and second frequencies. A measurement circuit measures a voltage standing wave ratio (VSWR). A match reflection optimizer has a reactive component configured to be adjusted responsive to an output signal from the measurement circuit.Type: ApplicationFiled: April 30, 2020Publication date: June 16, 2022Inventors: Eller Y. Juco, Karl Frederick Leeser
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Publication number: 20210257188Abstract: A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.Type: ApplicationFiled: July 8, 2019Publication date: August 19, 2021Inventors: Eller Y. JUCO, Karl Frederick LEESER, Huatan QIU
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Publication number: 20210202208Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.Type: ApplicationFiled: March 17, 2021Publication date: July 1, 2021Inventors: Eller Y. Juco, Karl Frederick Leeser, David French, Sunil Kapoor, Aaron Bingham, David Alan Metz, Brett Herzig, Jacob L. Hiester, Brian Knight
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Patent number: 10991550Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.Type: GrantFiled: September 4, 2018Date of Patent: April 27, 2021Assignee: Lam Research CorporationInventors: Eller Y. Juco, Karl Frederick Leeser, David French, Sunil Kapoor, Aaron Bingham, David Alan Metz, Brett Herzig, Jacob L. Hiester, Brian Knight
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Patent number: 10774423Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.Type: GrantFiled: November 24, 2014Date of Patent: September 15, 2020Assignee: Applied Materials, Inc.Inventors: Karthik Janakiraman, Thomas Nowak, Juan Carlos Rocha-Alvarez, Mark A. Fodor, Dale R. Du Bois, Amit Bansal, Mohamad Ayoub, Eller Y. Juco, Visweswaren Sivaramakrishnan, Hichem M'Saad
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Publication number: 20200075289Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.Type: ApplicationFiled: September 4, 2018Publication date: March 5, 2020Inventors: Eller Y. Juco, Karl Frederick Leeser, David French, Sunil Kapoor, Aaron Bingham, David Alan Metz, Brett Herzig, Jacob L. Hiester, Brian Knight
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Patent number: 10217610Abstract: Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower electrode within the processing chamber. A power source is provided. A gas mixture is flowed into the processing chamber. A first match arrangement coupled to an upper electrode is adjusted to control current flowing through the upper electrode to change the upper electrode from a grounded state to a floating state. A second match arrangement coupled to a top ring electrode is adjusted to control current flowing through the top ring electrode so as to control plasma formed above a top edge of the substrate. An extension of the upper electrode is lowered during plasma processing so as to minimize a gap between the extension of the upper electrode and the substrate received on the lower electrode, such that the gap is incapable of supporting plasma formed in the processing chamber.Type: GrantFiled: January 8, 2016Date of Patent: February 26, 2019Assignee: Lam Research CorporationInventors: Eller Y. Juco, Neungho Shin, Yunsang Kim, Andrew Bailey
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Publication number: 20180073142Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.Type: ApplicationFiled: November 24, 2014Publication date: March 15, 2018Applicant: Applied Materials, Inc.Inventors: Karthik Janakiraman, Thomas NOWAK, Juan Carlos ROCHA-ALVAREZ, Mark A. FODOR, Dale R. DU BOIS, Amit BANSAL, Mohamad AYOUB, Eller Y. JUCO, Visweswaren SIVARAMAKRISHNAN, Hichem M'SAAD
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Publication number: 20160145742Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.Type: ApplicationFiled: November 24, 2014Publication date: May 26, 2016Applicant: Applied Materials, Inc.Inventors: Karthik Janakiraman, Thomas NOWAK, Juan Carlos ROCHA-ALVAREZ, Mark FODOR, Dale R. DU BOIS, Amit Kumar BANSAL, Mohamad A. AYOUB, Eller Y. JUCO, Visweswaren SIVARAMAKRISHNAN, Hichem M'SAAD
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Patent number: 9337072Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.Type: GrantFiled: November 19, 2010Date of Patent: May 10, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Ganesh Balasubramanian, Amit Bansal, Eller Y. Juco, Mohamad Ayoub, Hyung-Joon Kim, Karthik Janakiraman, Sudha Rathi, Deenesh Padhi, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Amir Al-Bayati, Derek R. Witty, Hichem M'Saad, Anton Baryshnikov, Chiu Chan, Shuang Liu
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Publication number: 20160126070Abstract: Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower electrode within the processing chamber. A power source is provided. A gas mixture is flowed into the processing chamber. A first match arrangement coupled to an upper electrode is adjusted to control current flowing through the upper electrode to change the upper electrode from a grounded state to a floating state. A second match arrangement coupled to a top ring electrode is adjusted to control current flowing through the top ring electrode so as to control plasma formed above a top edge of the substrate. An extension of the upper electrode is lowered during plasma processing so as to minimize a gap between the extension of the upper electrode and the substrate received on the lower electrode, such that the gap is incapable of supporting plasma formed in the processing chamber.Type: ApplicationFiled: January 8, 2016Publication date: May 5, 2016Inventors: Eller Y. Juco, Neungho Shin, Yunsang Kim, Andrew Bailey
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Patent number: 9275838Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.Type: GrantFiled: September 2, 2009Date of Patent: March 1, 2016Assignee: Lam Research CorporationInventors: Eller Y. Juco, Neungho Shin, Yunsang Kim, Andrew Bailey
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Publication number: 20120205046Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.Type: ApplicationFiled: April 26, 2012Publication date: August 16, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Karthik Janakiraman, Thomas Nowak, Juan Carlos Rocha-Alvarez, Mark A. Fodor, Dale R. Du Bois, Amit Bansal, Mohamad A. Ayoub, Eller Y. Juco, Visweswaren Sivaramakrishnan, Hichem M'Saad
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Patent number: D935424Type: GrantFiled: May 6, 2019Date of Patent: November 9, 2021Assignee: Lam Research CorporationInventor: Eller Y. Juco
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Patent number: D962881Type: GrantFiled: May 6, 2019Date of Patent: September 6, 2022Assignee: Lam Research CorporationInventor: Eller Y. Juco