Abstract: An apparatus includes two multi-bank memory devices for storing duplicate data in each memory bank in an embodiment of the invention. The two memory devices are able to replace a more expensive fast-cycle, fixed latency single memory device. In an embodiment of the invention, a memory controller includes controller logic and a plurality of write buffers for interleaving write transactions to each memory bank in the two memory devices. A memory controller also includes tag memory for identifying valid data in the memory banks. In another embodiment of the invention, a game console includes the apparatus and executes game software that requires fixed latency in a mode of operation. In yet another embodiment of the invention, each memory device is coupled to respective write channels. Write data is simultaneously written to two memory banks in respective sets of memory banks in a memory device in an embodiment of the present invention.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device with at least one switch element. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. A switch element is positioned on or off a memory module and includes two transistors in embodiments of the invention. One or more switch elements are coupled to one or more channels to allow for upgrades of memory modules in a memory system. An asymmetrical switch topology allows for increasing the number of memory modules to more than two memory modules without adding switch elements serially on each channel. Switch elements allow for increasing the number of ranks of memory modules in a system, while also achieving many of the benefits associated with point-to-point topology.

Abstract: A memory module includes a plurality of signal paths that provide data to a memory module connector interface from a plurality of respective integrated circuit buffer devices that access data from an associated plurality of integrated circuit memory devices. The memory module forms a plurality of “data slices” or a plurality of portions of the memory module data bus that is coupled to the respective integrated circuit buffer devices. Each integrated circuit buffer device is also coupled to a bus that provides control information that specifies an access to at least one integrated circuit memory devices. According to an embodiment, a SPD device stores information regarding configuration information of the memory module. In embodiments, at least one integrated circuit buffer devices access information stored in the SPD device. In a package embodiment, a package houses an integrated circuit buffer die and a plurality of integrated circuit memory dies.

Abstract: A system comprises a controller device, an integrated circuit buffer device and a first and second memory device. A first plurality of signal lines is coupled to the controller device. A second plurality of signal lines is coupled to the first memory device and the integrated circuit buffer device. The second plurality of signal lines carries first address information from the integrated circuit buffer device to the first memory device. A third plurality of signal lines is coupled to the first memory device and the integrated circuit buffer device. The third plurality of signal lines carries first control information from the integrated circuit buffer device to the first memory device. A first signal line is coupled to the first memory device and the integrated circuit buffer device. The first signal line carries a first signal from the integrated circuit buffer device to the first memory device.

Abstract: A clock distribution network locks a local clock signal to a reference clock signal using a first feedback loop associated with a synchronization circuit (e.g., a PLL or a DLL). The local clock signal can then be selectively distributed to a plurality of clock destination nodes via a clock network. Clock distribution may be disabled as needed to save power. The first feedback loop is active irrespective of whether clock distribution is enabled. The delay through the clock network may drift due to temperature and supply-voltage fluctuations, which introduces phase errors in the distributed clock signals. A second feedback loop is activated when clock distribution is enabled to compensate for this drift.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered module having a configurable width buffer device. The configurable width buffer device is coupled to at least one memory device on the configurable width memory module. The configurable width buffer device includes an interface and a configurable serialization circuit capable of varying a data path width or a number of contacts used at the interface of the configurable width buffer device in accessing the at least one memory device. In an alternate embodiment of the present invention, a multiplexer/demultiplexer circuit is provided. A state storage provides a data width for the configurable width buffer and a SPD provides the configurable width buffer and/or module capabilities to the memory system.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device with at least one bypass circuit. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. The configurable width buffer device is coupled to at least one memory device (by way of an internal channel), entry pin and exit pin on the memory module. The configurable width buffer device includes a multiplexer/demultiplexer circuit coupled to the entry pin and the internal channel for accessing the memory device. A bypass circuit is coupled to the entry pin and the exit pin in order to allow information to be transferred through the memory module to another coupled memory module in the memory system by way of an external channel.

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered module having a configurable width buffer device. The configurable width buffer device is coupled to at least one memory device on the configurable width memory module. The configurable width buffer device includes an interface and a configurable serialization circuit capable of varying a data path width or a number of contacts used at the interface of the configurable width buffer device in accessing the at least one memory device. In an alternate embodiment of the present invention, a multiplexer/demultiplexer circuit is provided. A state storage provides a data width for the configurable width buffer and a SPD provides the configurable width buffer and/or module capabilities to the memory system.

Abstract: A system comprises a controller device, an integrated circuit buffer device and a first and second memory device. A first plurality of signal lines is coupled to the controller device. A second plurality of signal lines is coupled to the first memory device and the integrated circuit buffer device. The second plurality of signal lines carries first address information from the integrated circuit buffer device to the first memory device. A third plurality of signal lines is coupled to the first memory device and the integrated circuit buffer device. The third plurality of signal lines carries first control information from the integrated circuit buffer device to the first memory device. A first signal line is coupled to the first memory device and the integrated circuit buffer device. The first signal line carries a first signal from the integrated circuit buffer device to the first memory device.

Abstract: A single chip dynamic random access memory has a memory core, including dynamic random access memory cells, and a clock receiver circuit to receive an external clock signal. A delay locked loop circuit is coupled to the clock receiver circuit. In a first power mode, the delay locked loop circuit and the clock receiver circuit are turned on. Power consumption in the first power mode is less than that consumed while in an active mode. In a second power mode, the delay locked loop circuit is turned off. The memory is configured to receive a command that specifies a power down mode, to turn off the delay locked loop circuit in response to the command that specifies the power down mode, and to operate the memory device in a standby power mode. The delay locked loop circuit and the clock receiver circuit are turned on in a standby mode.

Abstract: A memory controller is disclosed. In one particular exemplary embodiment, the memory controller may comprise a first transmitter to output first and second write commands synchronously with respect to a clock signal, a second transmitter to output first data using a first timing offset such that the first data arrives at a first memory device in accordance with a predetermined timing relationship with respect to a first transition of the clock signal, and a third transmitter to output second data suing a second timing offset such that the second data arrives at a second memory device in accordance with a predetermined timing relationship with respect to a second transition of the clock signal.

Abstract: A memory system having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data, associated with a write command, to the first memory device, and a second signal line coupled to the second memory device to provide second data, associated with the write command, to the second memory device. A control signal path is coupled to the first and second memory devices and the termination component such that the write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the termination component. A third signal line is provided to convey a clock signal that indicates when the write command propagating on the control signal path is to be sampled by the first and second memory devices.

Abstract: The point-to-point interconnection system for stacked devices includes a device, a substrate, operational circuitry, at least three electrical contacts and a conductor. The substrate has opposing first and second surfaces. A first electrical contact is mechanically coupled to the first surface of the device and electrically coupled to the operational circuitry. The second electrical contact is mechanically coupled to the first surface. The third electrical contact is mechanically coupled to the second surface opposite the first electrical contact. The conductor electrically couples the second electrical contact to the third electrical contact.

Abstract: A system includes a first bus, a master device coupled to the first bus, and one or more subsystems coupled to the first bus. A respective subsystem includes a second bus, one or more slave devices coupled to the second bus, a write buffer to receive incoming signals from the master device via the first bus and to transmit signals to the one or more slave devices via the second bus in response to the incoming signals, and a read buffer to receive outgoing signals from the one or more slave devices via the second bus and to transmit signals to the master device via the first bus in response to the outgoing signals.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device and at least one flyby element. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. A flyby element is positioned on a memory module and/or in the buffer device and includes conductive element or signal line in embodiments of the invention. One or more flyby elements are coupled to one or more memory modules to allow for upgrades of memory modules in a memory system. An asymmetrical flyby topology allows for increasing the number of memory modules to more than two memory modules without increasing any more delay than is present in with two memory modules.

Abstract: A dynamic random access memory device includes banks of dynamic memory cells. The device performs a refresh operation in response to receiving a self refresh command, by refreshing rows of the memory cells located in each of the banks. Further, a refresh frequency for the refresh operation is selected such that the refresh frequency is minimized to conserve power consumed by the memory device while being sufficient to refresh the rows of the memory cells.

Abstract: A clock distribution network locks a local clock signal to a reference clock signal using a first feedback loop associated with a synchronization circuit (e.g., a PLL or a DLL). The local clock signal can then be selectively distributed to a plurality of clock destination nodes via a clock network. Clock distribution may be disabled as needed to save power. The first feedback loop is active irrespective of whether clock distribution is enabled. The delay through the clock network may drift due to temperature and supply-voltage fluctuations, which introduces phase errors in the distributed clock signals. A second feedback loop is activated when clock distribution is enabled to compensate for this drift.

Abstract: A semiconductor memory device has a memory core that includes at least eight banks of dynamic random access storage cells and an internal data bus coupled to the memory core. The internal data bus receives a plurality of data bits from a selected bank of the memory core. The semiconductor memory device further comprises a first interface to receive a read command from external to the semiconductor memory device and a second interface to output first and second subsets of the plurality of data bits. The first subset is output during a first phase of an external clock signal and the second subset is output during a second phase of the external clock signal. The first phase includes a first edge transition and the second phase includes a second edge transition. The second edge transition is an opposite edge transition with respect to the first edge transition.

Abstract: Various module structures are disclosed which may be used to implement modules having 1 to N channels. Bus systems may be formed by the interconnection of such modules.