Patents by Inventor Eric S. Moyer
Eric S. Moyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11938584Abstract: A chemical mechanical polishing pad includes a surface portion of a first material. The surface portion includes a plurality of grooves. A first portion of the grooves are exposed grooves located at a surface of the chemical mechanical polishing pad. A second portion of the grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad, such that, during use of the chemical mechanical polishing pad, one or more of the buried grooves are exposed at the surface.Type: GrantFiled: May 7, 2020Date of Patent: March 26, 2024Assignee: CMC MATERIALS LLCInventors: Paul Andre Lefevre, Devin Schmitt, Jaeseok Lee, Eric S. Moyer, Holland Hodges
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Patent number: 11845157Abstract: A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.Type: GrantFiled: May 7, 2020Date of Patent: December 19, 2023Assignee: CMC MATERIALS, INC.Inventors: Eric S. Moyer, Lin Fu, William Michael Spitzig, Chen-Chih Tsai, Ping Huang, Justin Stewart, Carlos Barros
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Patent number: 11807710Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.Type: GrantFiled: October 18, 2021Date of Patent: November 7, 2023Assignee: CMC Materials, Inc.Inventors: Chen-Chih Tsai, Eric S. Moyer, Ping Huang
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Publication number: 20220119586Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.Type: ApplicationFiled: October 18, 2021Publication date: April 21, 2022Inventors: Chen-Chih TSAI, Eric S. Moyer, Ping Huang
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Publication number: 20200353586Abstract: A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.Type: ApplicationFiled: May 7, 2020Publication date: November 12, 2020Inventors: Eric S. MOYER, Lin FU, William Michael SPITZIG, Chen-Chih TSAI, Ping HUANG, Justin STEWART, Carlos BARROS
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Publication number: 20200353588Abstract: A chemical mechanical polishing pad includes a surface portion of a first material. The surface portion includes a plurality of grooves. A first portion of the grooves are exposed grooves located at a surface of the chemical mechanical polishing pad. A second portion of the grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad, such that, during use of the chemical mechanical polishing pad, one or more of the buried grooves are exposed at the surface.Type: ApplicationFiled: May 7, 2020Publication date: November 12, 2020Inventors: Paul Andre LEFEVRE, Devin SCHMITT, Jaeseok LEE, Eric S. MOYER, Holland HODGES
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Patent number: 9086626Abstract: A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.Type: GrantFiled: March 28, 2012Date of Patent: July 21, 2015Assignee: DOW CORNING CORPORATIONInventors: Peng-Fei Fu, Eric S. Moyer, Jason Suhr
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Patent number: 9029269Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.Type: GrantFiled: February 24, 2012Date of Patent: May 12, 2015Assignee: Dow Corning CorporationInventors: Michael Bourbina, Jeffrey N. Bremmer, Eric S. Moyer, Sheng Wang, Craig R. Yeakle
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Publication number: 20140342292Abstract: A method of preparing a DIABS-based silsesquioxane resin for use in an antireflective hard-mask coating for photolithography is provided. Methods of preparing an antireflective coating from the DIABS-based silsesquioxane resin and using said antireflective coating in photolithography is alternatively presented. The DIABS-based silsequioxane resin has structural units formed from the hydrolysis and condensation of silane monomers including di-t-butoxydiacetoxysilane (DIABS) and at least one selected from the group of R1 SiX3, R2SiX3, R3SiX3, and SiX4 with water; wherein R1 is H or an alkyl group, X is a halide or an alkoxy group, R2 is a chromophore moiety, and R3 is a reactive site or crosslinking site. The DIABS-based silsesqioxane resin is characterized by the presence of at least one tetra-functional SiO4/2 unit formed via the hydrolysis of di-t-butoxydiacetoxysilane (DIABS).Type: ApplicationFiled: January 8, 2013Publication date: November 20, 2014Inventors: Peng-Fei Fu, Eric S. Moyer, Jason Suhr
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Publication number: 20140057450Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.Type: ApplicationFiled: February 24, 2012Publication date: February 27, 2014Inventors: Michael Bourbina, Jeffrey N. Bremmer, Eric S. Moyer, Sheng Wang, Craig R. Yeakle
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Publication number: 20140051804Abstract: Polysilanesiloxane copolymers or resins and method of making are provided. The present disclosure further provides a method of applying the polysilanesiloxane copolymers onto a substrate to form a polysilanesiloxane film for use in photolithography (193 nm).Type: ApplicationFiled: March 8, 2012Publication date: February 20, 2014Inventors: Xiaobing Zhou, Eric S. Moyer
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Publication number: 20140023970Abstract: A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.Type: ApplicationFiled: March 28, 2012Publication date: January 23, 2014Applicant: DOW CORNING CORPORATIONInventors: Peng-Fei Fu, Eric S. Moyer, Jason Suhr
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Patent number: 7368173Abstract: Herein we disclose a composition, comprising a siloxane resin having the formula (HSiO3/2)a. (SiO4/2)b(HSiX3/2)c(SiX4/2)d, wherein each X is independently —O—, —OH, or —O—(CH2)m—Zn, wherein each m is independently an integer from 1 to about 5, Z is an 5 aromatic moiety, and each n is independently an integer from 1 to about 6; 0<a<1, 0<b<1, 0<c<1, 0<d<1, and a+b+c+d=1. We also disclose methods for preparing the siloxane resin composition and a method of preparing an anti-reflective coating on a substrate, wherein the anti-reflective coating is derived from the siloxane resin composition.Type: GrantFiled: May 20, 2004Date of Patent: May 6, 2008Assignee: Dow Corning CorporationInventors: Bianxiao Zhong, Eric S. Moyer
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Patent number: 6727038Abstract: A photodefineable mixture comprising oligomeric divinyltetramethyldisiloxane bisbenzocyclobutene as its major resin component dissolved in mesitylene and at least 2,6-bis(4-azidobenzylidene)-4-ethylcyclohexanone as a photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation is disclosed. These polymer compositions are useful as thin film dielectrics in electronic applications such as multichip modules, integrated circuits and printed circuit boards.Type: GrantFiled: July 20, 2001Date of Patent: April 27, 2004Assignee: Dow Global Technologies Inc.Inventors: Ying Hung So, Cheryl L. Murlick, Daniel M. Scheck, Gregory S. Becker, Eric S. Moyer
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Publication number: 20030175535Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma cured coating having a first dielectric constant and having a first elastic modulus is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, and plasma curing the porous network coating to reduce an amount of Si—H bonds. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. Accordingly, an SiO2-containing plasma cured coating is also provided, the coating being formed by annealing the plasma cured coating to produce an annealed, plasma cured coating having a second dielectric constant which is less than the first dielectric constant and having a second elastic modulus which is comparable to the first elastic modulus. The annealed, SiO2-containing plasma cured coating can have a dielectric constant between about 1.1 and about 3.Type: ApplicationFiled: March 7, 2003Publication date: September 18, 2003Inventors: Ivan L. Berry, Todd Bridgewater, Wei Chen, Qingyuan Han, Eric S. Moyer, Michael J. Spaulding, Carlo Waldfried
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Patent number: 6558755Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.Type: GrantFiled: March 19, 2001Date of Patent: May 6, 2003Assignees: Dow Corning Corporation, Axcelis Technologies, Inc.Inventors: Ivan L. Berry, III, Todd Bridgewater, Wei Chen, Qingyuan Han, Eric S. Moyer, Michael J. Spaulding, Carlo Waldfried
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Publication number: 20010038919Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically less than about 475° C., and the annealing time is typically no more than about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.Type: ApplicationFiled: March 19, 2001Publication date: November 8, 2001Inventors: Ivan L. Berry, Todd Bridgewater, Wei Chen, Qingyuan Han, Eric S. Moyer, Michael J. Spaulding, Carlo Waldfried
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Patent number: 6083661Abstract: Photodefineable cyclobutarene compositions are disclosed. These polymer compositions are useful in composites, laminates, membranes, films, adhesives, coatings, and electronic applications such as multichip modules and printed circuit boards. An example of such photodefineable cyclobutarene compositions is a mixture of a photosensitive agent such as 2,6-bis(4-azidobenzylidene)-4-methylcyclohexanone and a cyclobutarene such as oligomeric divinyltetramethyldisiloxane bisbenzocyclobutane.Type: GrantFiled: August 15, 1994Date of Patent: July 4, 2000Assignee: The Dow Chemical CompanyInventors: Frank L. Oaks, Eric S. Moyer, Edward W. Rutter, Jr., Robert F. Harris
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Patent number: 5882836Abstract: A photocurable formulation containing a partially polymerized DVS resin formed by heating DVS monomer (1,3-bis(2-bicyclo?4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane) in a solvent at an initial concentration of DVS monomer in the solvent of from about 12 to about 32 weight percent. This photocurable formulation may be used as an interlayer dielectric to fabricate thin film multichip modules.Type: GrantFiled: June 5, 1995Date of Patent: March 16, 1999Assignee: The Dow Chemical CompanyInventors: Pamela S. Foster, Ernest L. Ecker, Edward W. Rutter, Jr., Eric S. Moyer
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Patent number: 5854302Abstract: A process for forming a partially polymerized DVS resin comprising heating DVS monomer (1,3-bis(2-bicyclo?4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane) in a solvent at a concentration of DVS monomer in the solvent such that:(a) the DVS resin, when applied and polymerized in a thin layer on a solid substrate does not craze; and(b) the DVS resin, is rendered photocurable by the addition of at least one photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation and the film retention upon development with a solvent is at least 50 percent. The DVS resin may be used as an interlayer dielectric to fabricate thin film multichip modules.Type: GrantFiled: April 14, 1994Date of Patent: December 29, 1998Assignee: The Dow Chemical CompanyInventors: Pamela S. Foster, Ernest L. Ecker, Edward W. Rutter, Jr., Eric S. Moyer