Patents by Inventor Eric Yakobson
Eric Yakobson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230407467Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: ApplicationFiled: September 6, 2023Publication date: December 21, 2023Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Patent number: 11846018Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: GrantFiled: February 7, 2022Date of Patent: December 19, 2023Assignee: MacDermid Enthone Inc.Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Publication number: 20220259724Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: ApplicationFiled: February 7, 2022Publication date: August 18, 2022Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Patent number: 11401618Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: GrantFiled: April 5, 2021Date of Patent: August 2, 2022Assignee: MacDermid Enthone Inc.Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, Jr., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
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Publication number: 20220064811Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.Type: ApplicationFiled: January 31, 2020Publication date: March 3, 2022Inventors: Eric Yakobson, Shaopeng Sun, Elie Najjar, Thomas Richardson, Vincent Paneccasio, Jr., Wenbo Shao, Kyle Whitten
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Publication number: 20210332491Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: ApplicationFiled: April 5, 2021Publication date: October 28, 2021Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, JR., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
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Patent number: 11035048Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: GrantFiled: July 5, 2017Date of Patent: June 15, 2021Assignee: MacDermid Enthone Inc.Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, Jr., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
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Publication number: 20190010624Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: ApplicationFiled: July 5, 2017Publication date: January 10, 2019Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, JR., Shaopeng Sun, Eric Yakobson
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Patent number: 9040117Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.Type: GrantFiled: March 27, 2012Date of Patent: May 26, 2015Assignee: Enthone Inc.Inventors: Abayomi I. Owei, Hiep X. Nguyen, Eric Yakobson
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Publication number: 20140256083Abstract: A copper electrolyte comprising a copper nitrate salt is described. The electrolyte is suitable for use in a light induced plating process for metallizing contacts in a photovoltaic solar cell. A method of metallizing an electrical contact in a photovoltaic solar cell using the copper electrolyte is also described.Type: ApplicationFiled: March 6, 2013Publication date: September 11, 2014Applicant: MACDERMID ACUMEN, INC.Inventors: Eric Yakobson, Adam Letize, Kenneth Crouse
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Publication number: 20130078367Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.Type: ApplicationFiled: March 27, 2012Publication date: March 28, 2013Applicant: ENTHONE INC.Inventors: Abayomi I. Owei, Hiep X. Nguyen, Eric Yakobson
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Patent number: 8142840Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.Type: GrantFiled: June 7, 2007Date of Patent: March 27, 2012Assignee: Enthone Inc.Inventors: Abayomi I. Owei, Hiep X. Nguyen, Eric Yakobson
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Patent number: 7682432Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.Type: GrantFiled: June 7, 2007Date of Patent: March 23, 2010Assignee: Enthone Inc.Inventors: Abayomi I. Owei, Hiep X. Nguyen, Eric Yakobson
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Patent number: 7393781Abstract: A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.Type: GrantFiled: September 10, 2007Date of Patent: July 1, 2008Assignee: Enthone Inc.Inventors: Eric Yakobson, Richard Hurtubise, Christian Witt, Qingyun Chen
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Patent number: 7332193Abstract: An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.Type: GrantFiled: March 21, 2005Date of Patent: February 19, 2008Assignee: Enthone, Inc.Inventors: Charles Valverde, Nicolai Petrov, Eric Yakobson, Qingyun Chen, Vincent Paneccasio, Jr., Richard Hurtubise, Christian Witt
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Publication number: 20070298609Abstract: A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.Type: ApplicationFiled: September 10, 2007Publication date: December 27, 2007Applicant: ENTHONE INC.Inventors: Eric Yakobson, Richard Hurtubise, Christian Witt, Qingyun Chen
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Publication number: 20070228333Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.Type: ApplicationFiled: June 7, 2007Publication date: October 4, 2007Applicant: ENTHONE, INC.Inventors: Abayomi Owei, Hiep Nguyen, Eric Yakobson
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Patent number: RE45297Abstract: A method for enhancing the solderability of a metallic surface is disclosed where the metallic surface is plated with an immersion silver plate prior to soldering, which immersion silver plate is treated with an additive selected from the group consisting of fatty amines, fatty amides, quaternary salts, amphateric salts, resinous amines, resinous amides, fatty acids, resinous acids, ethoxylated derivatives of any of the foregoing, and mixtures of any of the foregoing. The immersion silver deposits created are resistant to electromigration.Type: GrantFiled: February 13, 2012Date of Patent: December 23, 2014Inventors: Ronald Redline, David Sawoska, Peter Kukanskis, Donald Ferrier, Eric Yakobson
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Patent number: RE45842Abstract: A method for enhancing the solderability of a metallic surface is disclosed where the metallic surface is plated with an immersion silver plate prior to soldering, which immersion silver plate is treated with an additive selected from the group consisting of fatty amines, fatty amides, quaternary salts, amphateric salts, resinous amines, resinous amides, fatty acids, resinous acids, ethoxylated derivatives of any of the foregoing, and mixtures of any of the foregoing. The immersion silver deposits created are resistant to electromigration.Type: GrantFiled: May 3, 2012Date of Patent: January 12, 2016Inventors: Ronald Redline, David Sawoska, Peter Kukanskis, Donald Ferrier, Eric Yakobson
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Patent number: RE45881Abstract: A method for enhancing the solderability of a metallic surface is disclosed where the metallic surface is plated with an immersion silver plate prior to soldering, which immersion silver plate is treated with an additive selected from the group consisting of fatty amines, fatty amides, quaternary salts, amphateric salts, resinous amines, resinous amides, fatty acids, resinous acids, ethoxylated derivatives of any of the foregoing, and mixtures of any of the foregoing. The immersion silver deposits created are resistant electromigration.Type: GrantFiled: May 3, 2012Date of Patent: February 9, 2016Inventors: Ronald Redline, David Sawoska, Peter Kukanskis, Donald Ferrier, Eric Yakobson