Abstract: A method for testing bipolar transistors in an integrated circuit includes first measuring first conductances of leakage paths between collectors and emitters of a first plurality of bipolar transistors with a known number of defects, calculating a per defect conductance value using the measured first conductances and the known number of defects to derive the linear relation. The method then measures second conductances of leakage path between collectors and emitters of a second plurality of bipolar transistors under test and having an unknown number of defects. Using the measured leakage path current from the second conductances and the linear relation, the number of defects related to the second plurality of bipolar transistors under test may be accurately determined.