Patents by Inventor Errol Sanchez

Errol Sanchez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doped silicon deposition process in resistively heated single wafer chamber
    Patent number: 6559039
    Abstract: A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.
    Type: Grant
    Filed: May 15, 2001
    Date of Patent: May 6, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Shulin Wang, Lee Luo, Steven A. Chen, Errol Sanchez, Xianzhi Tao, Zoran Dragojlovic, Li Fu
  • Bi-layer silicon film and method of fabrication
    Publication number: 20030047734
    Abstract: A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.
    Type: Application
    Filed: September 7, 2001
    Publication date: March 13, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Li Fu, Shulin Wang, Luo Lee, Steven A. Chen, Errol Sanchez
  • DOPED SILICON DEPOSITION PROCESS IN RESISTIVELY HEATED SINGLE WAFER CHAMBER
    Publication number: 20020173127
    Abstract: A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.
    Type: Application
    Filed: May 15, 2001
    Publication date: November 21, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Shulin Wang, Lee Luo, Steven A. Chen, Errol Sanchez, Xianzhi Tao, Zoran Dragojlovic, Li Fu