Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A method for controlling an external electronic device of an electronic device, according to various embodiments, comprises the steps of: receiving data information corresponding to at least one function of the external electronic device from an external electronic device connected to the electronic device; displaying a setting window for setting a user interface for controlling the external electronic device using the data information; selecting a control item corresponding to the at least one function included in the setting window according to user input reception; and setting and displaying the user interface corresponding to the selected control item. Other embodiments are possible.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a photopolymerizable compound containing a double bond and a specific photopolymerization initiator, wherein the photopolymerizable compound containing a double bond suppresses the photopolymerization reaction upon exposure to light but causes the photopolymerization reaction at the time of photobleaching after development, thereby controlling the flowability of the composition during thermal curing. Thus, a pattern is readily formed, which makes it possible to maintain excellent sensitivity upon the development and even upon the hard-bake process after the development, and it is possible to provide a cured film that is excellent in film strength and film retention rate.

Abstract: A condensed cyclic compound and an organic light-emitting device including the same, the condensed cyclic compound being represented by Formula 1 below:

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

Abstract: The present invention relates to an EPRS (glutamyl-prolyl-tRNA synthetase) protein or a fragment thereof. The EPRS protein of the present invention or fragment thereof may bind to PCBP2 protein to activate the MAVS signaling pathway, and thus it has anti-RNA viral effects, thereby being effective for preventing or treating a RNA viral infectious disease.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A vertical memory device includes a plurality of stacked structures, at least one inter-structure layer, and a channel structure. The plurality of stacked structures comprises a plurality of gate electrodes and a plurality of insulation film patterns that are alternately and repeatedly stacked on a substrate. At least one inter-structure layer is positioned between the two stacked structures adjacent to each other from among the plurality of stacked structures. A channel structure penetrates the plurality of stacked structures and the at least one inter-structure layer, the channel structure extending in the first direction, the channel structure being connected to the substrate.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: Provided is a method of analyzing microhaplotypes by using a next generation sequencing (NGS). The method of analyzing microhaplotypes by using the NGS includes: (a) performing a multiplex PCR for simultaneously amplifying the microhaplotypes; (b) performing an indexing PCR by using a product of the multiplex PCR; and (c) performing the NGS by using a product of the indexing PCR.

Abstract: An image processing method of a display apparatus is disclosed. The image processing method includes analyzing a plurality of image frames constituting a virtual reality image and determining shake information of a camera which photographs the VR image, calculating a shake correction value of an image corresponding to a viewing area of a user from the VR image based on the shake information of the camera, and adjusting the viewing area based on the shake correction value and displaying an image corresponding to the adjusted viewing area in the VR image.