Abstract: A memory interface circuit has a first differential receiver having a first input coupled to a first reference voltage source, a second differential receiver configured to receive a differential data strobe signal in a pair of complementary signals, a third differential receiver having a first input coupled to a second reference voltage source and a second input configured to receive one of the pair of complementary signals, a clock generation circuit configured to generate a read clock signal based on an output of the second differential receiver and using a qualifying signal output by the third differential receiver to qualify one or more edges in the read clock signal and a data capture circuit clocked by the read clock signal and configured to capture data from the output of the first differential receiver using the one or more edges in the read clock signal.

Abstract: Methods and apparatuses for improve clocking scheme to reduce power consumption are presented. The apparatus includes a host configured to communicate with a memory via a link. The host is further configured to receive a first clock from the memory; to receive, based on the first clock, data from the memory, in a first mode of a read operation; to generate a second clock, the second clock being generated independent of the first clock; and to receive, based on the second clock, data from the memory, in a second mode of the read operation.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Methods and apparatuses for improve clocking scheme to reduce power consumption are presented. The apparatus includes a host configured to communicate with a memory via a link. The host is further configured to receive a first clock from the memory; to receive, based on the first clock, data from the memory, in a first mode of a read operation; to generate a second clock, the second clock being generated independent of the first clock; and to receive, based on the second clock, data from the memory, in a second mode of the read operation.

Abstract: Signal timing drift in a synchronous dynamic random access memory (SDRAM) system may be compensated for by performing write signal timing training using a multi-purpose command (MPC) first-in-first-out (FIFO) write and MPC FIFO read at periodic intervals interspersed with mission-mode SDRAM traffic. The test result samples obtained from the write signal timing training may be analyzed independently of mission-mode SDRAM traffic. The mission-mode timing of the SDRAM data bit signals relative to the SDRAM write clock signal may be adjusted based on the analysis.

Abstract: Signal timing drift in a synchronous dynamic random access memory (SDRAM) system may be compensated for by performing write signal timing training using a multi-purpose command (MPC) first-in-first-out (FIFO) write and MPC FIFO read at periodic intervals interspersed with mission-mode SDRAM traffic. The test result samples obtained from the write signal timing training may be analyzed independently of mission-mode SDRAM traffic. The mission-mode timing of the SDRAM data bit signals relative to the SDRAM write clock signal may be adjusted based on the analysis.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Micro-idle power in a subsystem of a portable computing device may be actively managed based on client voting. Each client vote may include a client activity status indication and a client latency tolerance indication. Votes are aggregated to provide an aggregate client latency tolerance, which may be used to obtain a set of micro-idle time values. Micro-idle timers in the subsystem may be set to associated micro-idle time values. The micro-idle timers determine whether one or more of the micro-idle time values have elapsed. A power management policy associated with each micro-idle time value determined to have elapsed may be applied to a portion of the subsystem.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Micro-idle power in a subsystem of a portable computing device may be actively managed based on client voting. Each client vote may include a client activity status indication and a client latency tolerance indication. Votes are aggregated to provide an aggregate client latency tolerance, which may be used to obtain a set of micro-idle time values. Micro-idle timers in the subsystem may be set to associated micro-idle time values. The micro-idle timers determine whether one or more of the micro-idle time values have elapsed. A power management policy associated with each micro-idle time value determined to have elapsed may be applied to a portion of the subsystem.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Systems and methods are disclosed for configuring dynamic random access memory (DRAM) in a personal computing device (PCD). An exemplary method includes providing a shared command access (CA) bus in communication with a first DRAM and a second DRAM. A first command from a system on a chip (SoC) is received at the first DRAM and the second DRAM. A decoder of the first DRAM determines whether to mask a mode register write (MRW) in response to the received first command. A second command containing configuration information is received vie the shared CA bus at the first DRAM and the second DRAM. Responsive to the determination by the decoder of the first DRAM, the received. MRW is either ignored or implemented by the first DRAM.

Abstract: Systems and methods are disclosed for configuring dynamic random access memory (DRAM) in a personal computing device (PCD). An exemplary method includes providing a shared command access (CA) bus in communication with a first DRAM and a second DRAM. A first command from a system on a chip (SoC) is received at the first DRAM and the second DRAM. A decoder of the first DRAM determines whether to mask a mode register write (MRW) in response to the received first command. A second command containing configuration information is received vie the shared CA bus at the first DRAM and the second DRAM. Responsive to the determination by the decoder of the first DRAM, the received MRW is either ignored or implemented by the first DRAM.

Abstract: Systems and methods are disclosed for configuring dynamic random access memory (DRAM) in a personal computing device (PCD). An exemplary method includes providing a shared command access (CA) bus in communication with a first DRAM and a second DRAM. A first command from a system on a chip (SoC) is received at the first DRAM and the second DRAM. A decoder of the first DRAM determines whether to mask a mode register write (MRW) in response to the received first command. A second command containing configuration information is received vie the shared CA bus at the first DRAM and the second DRAM. Responsive to the determination by the decoder of the first DRAM, the received MRW is either ignored or implemented by the first DRAM.

Abstract: Systems and methods are disclosed for configuring dynamic random access memory (DRAM) in a personal computing device (PCD). An exemplary method includes providing a shared command access (CA) bus in communication with a first DRAM and a second DRAM. A first command from a system on a chip (SoC) is received at the first DRAM and the second DRAM. A decoder of the first DRAM determines whether to mask a mode register write (MRW) in response to the received first command. A second command containing configuration information is received vie the shared CA bus at the first DRAM and the second DRAM. Responsive to the determination by the decoder of the first DRAM, the received MRW is either ignored or implemented by the first DRAM.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.