Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: A memory including an array of memory cells and a control circuit. The control circuit is configured to control partial array self refreshes and to switch from one partial array self refresh to another partial array self refresh. Data in memory cells that are refreshed via the one partial array self refresh and refreshed via the other partial array self refresh is retained in the memory cells from before a first switch from the one partial array self refresh to the other partial array self refresh to after the first switch.

Abstract: A memory including an array of memory cells and a control circuit. The control circuit is configured to control partial array self refreshes and to switch from one partial array self refresh to another partial array self refresh. Data in memory cells that are refreshed via the one partial array self refresh and refreshed via the other partial array self refresh is retained in the memory cells from before a first switch from the one partial array self refresh to the other partial array self refresh to after the first switch.

Abstract: A memory includes a circuit having a set terminal for receiving an input signal indicating a request to exit a power-down mode. The circuit is configured to provide an output signal to enable exiting the power-down mode in response to the input signal before the input signal is latched.

Abstract: One embodiment provides a memory device including a first receiver and a second receiver. The first receiver is configured to receive a single ended clock signal and provide a first clock signal based on the single ended clock signal to provide a memory function. The second receiver is configured to receive a differential clock signal and provide a second clock signal based on the differential clock signal to provide the memory function. Only one of the first receiver and the second receiver is selected to provide the memory function.

Abstract: One embodiment provides a memory including a first receiver, a second receiver, a circuit, a first buffer, and a second buffer. The first receiver is situated on one side of the memory and configured to receive a first clock signal and provide a first clock tree signal. The second receiver is situated on another side of the memory and configured to receive a second clock signal and provide a second clock tree signal. The circuit is configured to receive the first clock tree signal and provide a distributed clock signal. The first buffer is configured to selectively provide one of the first clock tree signal and the distributed clock signal to the one side of the memory and the second buffer is configured to selectively provide one of the second clock tree signal and the distributed clock signal to the other side of the memory.

Abstract: One embodiment provides a memory device including a memory bank, a first receiver, and a second receiver. The memory bank includes memory cells. The first receiver is configured to receive a clock signal and provide a data clock signal based on the clock signal. The second receiver is configured to receive the clock signal and provide a command/address clock signal based on the clock signal. The first receiver provides the data clock signal to output read data from the memory cells. The second receiver provides the command/address clock signal to execute commands.

Abstract: A memory component includes at least one memory bank array, a first and a second region, a clock tree, and a clock control circuit. The memory component is configured in a semiconductor wafer. The at least one memory bank array is configured such that data is read out of it during a read operation. The clock tree is coupled between the first and second regions and is configured for driving data during the read operation. The clock control circuit is configured within one of the first and second regions and is responsive to read control signals in order to prevent driving the clock tree outside of the read operation.

Abstract: A method of temperature compensating an off chip driver (OCD) circuit having a plurality of transistor fingers comprising rendering active a normally inactive transistor finger in the circuit when a predetermined temperature condition occurs. A temperature compensated off chip driver (OCD) circuit utilizing such method.