Patents by Inventor Faruk Gungor
Faruk Gungor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11598003Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.Type: GrantFiled: September 12, 2017Date of Patent: March 7, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Faruk Gungor, Dien-Yeh Wu, Joel M. Huston, Mei Chang, Xiaoxiong Yuan, Kazuya Daito, Avgerinos V. Gelatos, Takashi Kuratomi, Yu Chang, Bin Cao
-
Patent number: 11380557Abstract: Embodiments of an apparatus for gas delivery in a semiconductor processing system use a gas distribution plate that has a plurality of gas passageways where the passageways have surfaces with an average roughness of less than or equal to approximately 10 Ra. In some embodiments, the gas distribution plate has one or more internal fluid passageways that are capable of being fluidly coupled to one or more fluid sources to provide temperature control of the gas distribution plate. In some embodiments, the gas distribution plate has at least one internal cavity with at least one heatsink that may surround at least one of the plurality of gas passageways to provide, at least partial, temperature control of the gas distribution plate.Type: GrantFiled: June 5, 2017Date of Patent: July 5, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Vincent Kirchhoff, Faruk Gungor, Felix Rabinovich, Gary Keppers
-
Patent number: 10770300Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.Type: GrantFiled: September 16, 2019Date of Patent: September 8, 2020Assignee: Applied Materials, Inc.Inventors: Takashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
-
Publication number: 20200013627Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: Takashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
-
Patent number: 10418246Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.Type: GrantFiled: November 2, 2017Date of Patent: September 17, 2019Assignee: Applied Materials, Inc.Inventors: Takashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
-
Patent number: 10407771Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.Type: GrantFiled: October 6, 2014Date of Patent: September 10, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Anqing Cui, Faruk Gungor, Dien-Yeh Wu, Vikas Jangra, Muhammad M. Rasheed, Wei V. Tang, Yixiong Yang, Xiaoxiong Yuan, Kyoung-Ho Bu, Srinivas Gandikota, Yu Chang, William W. Kuang
-
Publication number: 20190078210Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.Type: ApplicationFiled: September 12, 2017Publication date: March 14, 2019Inventors: FARUK GUNGOR, DIEN-YEH WU, JOEL M. HUSTON, MEI CHANG, XIAOXIONG YUAN, KAZUYA DAITO, AVGERINOS V. GELATOS, TAKASHI KURATOMI, YU CHANG, BIN CAO
-
Patent number: 10175093Abstract: Embodiments of apparatus for sensing a level of a processing medium in a chemical delivery apparatus are provided herein. In some embodiments, a chemical delivery apparatus includes: a support structure; a container coupled to the support structure to hold a chemical precursor within an interior of the container; an excitation source configured to cause vibrations in an exterior surface of the container; and a measurement device configured to measure a frequency of the vibrations.Type: GrantFiled: June 10, 2016Date of Patent: January 8, 2019Assignee: APPLIED MATERIALS, INC.Inventor: Faruk Gungor
-
Publication number: 20180350627Abstract: Embodiments of an apparatus for gas delivery in a semiconductor processing system use a gas distribution plate that has a plurality of gas passageways where the passageways have surfaces with an average roughness of less than or equal to approximately 10 Ra. In some embodiments, the gas distribution plate has one or more internal fluid passageways that are capable of being fluidly coupled to one or more fluid sources to provide temperature control of the gas distribution plate. In some embodiments, the gas distribution plate has at least one internal cavity with at least one heatsink that may surround at least one of the plurality of gas passageways to provide, at least partial, temperature control of the gas distribution plate.Type: ApplicationFiled: June 5, 2017Publication date: December 6, 2018Inventors: Vincent Kirchhoff, Faruk Gungor, Felix Rabinovich, Gary Keppers
-
Publication number: 20180122647Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.Type: ApplicationFiled: November 2, 2017Publication date: May 3, 2018Inventors: Takashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
-
Patent number: 9683287Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.Type: GrantFiled: October 21, 2013Date of Patent: June 20, 2017Assignee: Applied Materials, Inc.Inventors: David Thompson, Srinivas Gandikota, Xinliang Lu, Wei Tang, Jing Zhou, Seshadri Ganguli, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Shih Chung Chen
-
Publication number: 20160363478Abstract: Embodiments of apparatus for sensing a level of a processing medium in a chemical delivery apparatus are provided herein. In some embodiments, a chemical delivery apparatus includes: a support structure; a container coupled to the support structure to hold a chemical precursor within an interior of the container; an excitation source configured to cause vibrations in an exterior surface of the container; and a measurement device configured to measure a frequency of the vibrations.Type: ApplicationFiled: June 10, 2016Publication date: December 15, 2016Inventor: Faruk GUNGOR
-
Publication number: 20160097119Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.Type: ApplicationFiled: October 6, 2014Publication date: April 7, 2016Inventors: ANQING CUI, FARUK GUNGOR, DIEN-YEH WU, VIKAS JANGRA, MUHAMMAD M. RASHEED, WEI V. TANG, YIXIONG YANG, XIAOXIONG YUAN, KYOUNG-HO BU, SRINIVAS GANDIKOTA, YU CHANG, WILLIAM W. KUANG
-
Patent number: 9145612Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.Type: GrantFiled: June 28, 2013Date of Patent: September 29, 2015Assignee: Applied Materials, Inc.Inventors: Srinivas Gandikota, Xinliang Lu, Shih Chung Chen, Wei Tang, Jing Zhou, Seshadri Ganguli, David Thompson, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Xinyu Fu, Yu Lei
-
Patent number: 9109754Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.Type: GrantFiled: October 17, 2012Date of Patent: August 18, 2015Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Mei Chang, Faruk Gungor, Paul F. Ma, David Chu, Chien-Teh Kao, Hyman Lam, Dien-Yeh Wu
-
Patent number: 8955547Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.Type: GrantFiled: March 14, 2013Date of Patent: February 17, 2015Assignee: Applied Materials, Inc.Inventors: Faruk Gungor, Dien-Yeh Wu, Joseph Yudovsky, Mei Chang
-
Publication number: 20140112824Abstract: Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.Type: ApplicationFiled: October 21, 2013Publication date: April 24, 2014Inventors: David Thompson, Srinivas Gandikota, Xinliang Lu, Wei Tang, Jing Zhou, Seshadri Ganguli, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Shih Chung Chen
-
Publication number: 20140017408Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.Type: ApplicationFiled: June 28, 2013Publication date: January 16, 2014Inventors: Srinivas Gandikota, Xinliang Lu, Shih Chung Chen, Wei Tang, Jing Zhou, Seshadri Ganguli, David Thompson, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Xinyu Fu, Yu Lei
-
Patent number: RE47440Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.Type: GrantFiled: August 16, 2017Date of Patent: June 18, 2019Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Mei Chang, Faruk Gungor, Paul F. Ma, David Chu, Chien-Teh Kao, Hyman Lam, Dien-Yeh Wu
-
Patent number: RE48994Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.Type: GrantFiled: June 6, 2019Date of Patent: March 29, 2022Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Mei Chang, Faruk Gungor, Paul F. Ma, David Chu, Chien-Teh Kao, Hyman W. H. Lam, Dien-Yeh Wu