Abstract: An optoelectronic device includes: (i) a semiconductor substrate doped with a first level of n-type dopants, (ii) a contact semiconductor layer disposed over the semiconductor substrate and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) stack disposed over the contact semiconductor layer and including alternating first and second epitaxial semiconductor layers having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers disposed over the upper DBR, the set of epitaxial layers includes one or more III-V semiconductor materials and defines: (a) a quantum well structure, and (b) a confinement layer, and (v) a lower DBR stack disposed over the set of epitaxial layers, opposite the upper DBR, and including alternating dielectric and semiconductor layers.

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

Abstract: A high-efficiency pre-drilling pressure meter test apparatus for deep rock mass includes a rigid drill pipe, a probe, a pressurizing device and a signal processing device. The rigid drill pipe, comprising a top end and a tail end opposite to the top end, receives a fluid medium. The probe is connected with the tail end of the rigid drill pipe and communicates with the rigid drill pipe. The probe includes a measuring chamber. The fluid medium flows from the rigid drill pipe to the measuring chamber. The pressurizing device is connected to the top end of the rigid drill pipe and applies pressure to the fluid medium. The signal processing device is electrically connected with the probe to detect deformation of the measuring chamber with the change of the pressure and volume of the fluid medium in the pressurizing device.

Abstract: An amide/iminium zwitterion catalyst has a catalyst pocket size that promotes transesterification and dehydrative esterification. The amide/iminium zwitterions are easily prepared by reacting aziridines with aminopyridines. The reaction can be applied a wide variety of esterification processes including the large-scale synthesis of biodiesel. The amide/iminium zwitterions allow the avoidance of strongly basic or acidic condition and avoidance of metal contamination in the products. Reactions are carried out at ambient or only modestly elevated temperatures. The amide/iminium zwitterion catalyst is easily recycled and reactions proceed in high to quantitative yields.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

Abstract: A hybrid deep-learning action prediction architecture system is described that predicts actions. The architecture includes a main path and an auxiliary path. The main path may contain multiple layers of convolutional neural networks for further aggregation to coarser time spans. The resultant data produced by the convolutional neural networks is passed to multiple layers of LSTMs. The outputs from LSTMs are then combined with the profile in the auxiliary path to predict an action label.

Abstract: A high-efficiency pre-drilling pressure meter test apparatus for deep rock mass includes a rigid drill pipe, a probe, a pressurizing device and a signal processing device. The rigid drill pipe, comprising a top end and a tail end opposite to the top end, receives a fluid medium. The probe is connected with the tail end of the rigid drill pipe and communicates with the rigid drill pipe. The probe includes a measuring chamber. The fluid medium flows from the rigid drill pipe to the measuring chamber. The pressurizing device is connected to the top end of the rigid drill pipe and applies pressure to the fluid medium. The signal processing device is electrically connected with the probe to detect deformation of the measuring chamber with the change of the pressure and volume of the fluid medium in the pressurizing device.

Abstract: The present disclosure relates to an automatic system and method for detecting problematic geological formations ahead of tunnel faces. The automatic system includes a data acquisition module configured to acquire data, a data transmission module configured to transmit the data and a control and data analysis module configured to receive and analyze the data and determine the geological formations ahead of the tunnel faces. The data acquisition module includes at least one three-component detector and a processor. The three-component detector is installed in a borehole in a side wall of the tunnel. The data transmission module includes a synchronous communicator and a signal line with shielding properties. The synchronous communicator is connected with the three-component detector via the signal line. The control and data analysis module includes a host and a control and analysis procedure of the host. The host is connected with the synchronous communicator.

Abstract: A method for electrical and optical bistable switching, including the following steps: providing a semiconductor device that includes a semiconductor base region of a first conductivity type between semiconductor collector and emitter regions of a second conductivity type, providing a quantum size region in the base region, and providing base, collector and emitter terminals respectively coupled with the base, collector, and emitter regions; providing input electrical signals with respect to the base, collector, and emitter terminals to obtain an electrical output signal and light emission from the base region; providing an optical resonant cavity that encloses at least a portion of the base region and the light emission therefrom, an optical output signal being obtained from a portion of the light in the optical resonant cavity; and modifying the input electrical signals to switch back and forth between a first state wherein the photon density in the cavity is below a predetermined threshold and the optical

Abstract: A method for electrical and optical bistable switching, including the following steps: providing a semiconductor device that includes a semiconductor base region of a first conductivity type between semiconductor collector and emitter regions of a second conductivity type, providing a quantum size region in the base region, and providing base, collector and emitter terminals respectively coupled with the base, collector, and emitter regions; providing input electrical signals with respect to the base, collector, and emitter terminals to obtain an electrical output signal and light emission from the base region; providing an optical resonant cavity that encloses at least a portion of the base region and the light emission therefrom, an optical output signal being obtained from a portion of the light in the optical resonant cavity; and modifying the input electrical signals to switch back and forth between a first state wherein the photon density in the cavity is below a predetermined threshold and the optical

Abstract: A method and device applied in an Android data processing system for performing synchronous control via an external apparatus. A control message from the external apparatus is received via a communication channel connected to the external apparatus. A pre-stored event generation procedure is executed by an Android Shell user privilege to convert the control message from the external apparatus into an event message identifiable by the Android data processing system. The Android data processing system identifies the event message and generates a corresponding control event to perform corresponding operations based on the control event. The external apparatus is used to synchronously control the Android data processing system and variation on the Android data processing system is less.

Abstract: The present invention discloses a radiation-hardened-by-design (RHBD) multi-gate device and a fabrication method thereof. The multi-gate device of the present invention includes a substrate; a source region and a drain region, which are on the substrate; a protruding fin structure and a field dielectric layer between the source region and the drain region on the substrate; a gate dielectric and a gate electrode on the fin structure and the dielectric layer; and two isolation layers separated to each other, which are disposed in the drain region between the adjacent two fins, wherein an interlayer is sandwiched between the two isolation layers.

Abstract: An image mirror display method for an Android data processing system is provided. The method includes: executing a pre-stored virtual display screen record procedure by an Android Shell user privilege for obtaining images displayed on a virtual display of the Android data processing system, wherein the images displayed on the virtual display are the same as current images displayed on an internal display of the Android data processing system; processing and storing the images displayed on the virtual display of the Android data processing system; and sending the stored images displayed on the virtual display of the Android data processing system to an external display device via a communication channel, wherein the Android data processing system and the external display device are coupled via the communication channel.

Abstract: The present invention discloses a radiation-hardened-by-design (RHBD) multi-gate device and a fabrication method thereof. The multi-gate device of the present invention includes a substrate; a source region and a drain region, which are on the substrate; a protruding fin structure and a field dielectric layer between the source region and the drain region on the substrate; a gate dielectric and a gate electrode on the fin structure and the dielectric layer; and two isolation layers separated to each other, which are disposed in the drain region between the adjacent two fins, wherein an interlayer is sandwiched between the two isolation layers.

Abstract: A method for producing laser emission, including the following steps: providing a layered semiconductor structure that includes a substrate, a lower reflector and a semiconductor collector region disposed over the substrate, a semiconductor base region disposed over the collector region, and a semiconductor emitter region disposed over the base region; providing, in the base region, at least one region exhibiting quantum size effects; depositing collector, base, and emitter electrodes respectively coupled with the collector, base, and emitter regions; disposing an insulating upper reflector over at least a portion of the emitter region; and applying electrical signals with respect to the collector, base, and emitter electrodes to produce laser emission from the base region in a vertical resonant optical cavity defined between the lower reflector and the insulating upper reflector.

Abstract: A radiation resistant CMOS device and a method for fabricating the same. The CMOS device includes a substrate, a source region, a drain region and a vertical channel on the substrate. A first dielectric protection region is inserted into the vertical channel at the center of the vertical channel to divide the vertical channel into two parts and has a height equal to the length of the vertical channel. The edge of the first dielectric protection region is 20-100 nm from an outer side of the channel, with a central axis of an silicon platform for an active region as the center. A second dielectric protection region is disposed under the source or drain region, with a length equal to the length of the source or drain region and a height of 10-50 nm. The dielectric protection regions effectively block paths for the source and drain regions collecting charges.

Abstract: A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced.

Abstract: An opto-electronic oscillator circuit, including: an opto-electronic circuit loop including an optical modulator that receives a first electrical signal and produces an optical output signal coupled with an optical resonator, a photodetector circuit optically coupled with the optical resonator, and a phase shifter coupled with the photodetector circuit for producing a phase shifted output signal that is fed back as the first electrical signal; an optical loop comprising the optical coupling of the optical resonator with the photodetector; and an electrical feedback circuit loop for coupling the first electrical signal with the photodetector circuit.

Abstract: In accordance with embodiments of the present disclosure, a document workflow server application may comprise one or more instructions embodied in computer-readable media. The document workflow server application may be configured to, when executed by a processor of a document workflow server receive from an imaging device communicatively coupled to the document workflow server via the Internet a user selection to perform a document service and in response to the user selection, perform the document service.