Patents by Inventor Fei Tan

Fei Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140253957
    Abstract: In accordance with embodiments of the present disclosure, a document workflow server application may comprise one or more instructions embodied in computer-readable media. The document workflow server application may be configured to, when executed by a processor of a document workflow server receive from an imaging device communicatively coupled to the document workflow server via the Internet a user selection to perform a document service and in response to the user selection, perform the document service.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 11, 2014
    Applicant: DELL PRODUCTS L.P.
    Inventors: Bee June Tye, Song Poh Chai, Vivek Chopra, Hui Li Lee, Pong Fei Tan, Natarajan Annamalai
  • Patent number: 8652929
    Abstract: The present invention discloses a CMOS device of reducing charge sharing effect and a fabrication method thereof. The present invention has an additional isolation for trapping carriers disposed right below an isolation region. the material of the additional isolation region is porous silicon. Since porous silicon is a functional material of spongy structure by electrochemistry anodic oxidizing monocrystalline silicon wafer, there are a large number of microvoids and dangling bonds on the surface layer of the porous silicon. These defects may form defect states in a center of forbidden band of the porous silicon, the defect states may trap carriers so as to cause an increased resistance. And with an increase of density of corrosion current, porosity increases, and defects in the porous silicon increase.
    Type: Grant
    Filed: April 16, 2012
    Date of Patent: February 18, 2014
    Assignee: Peking University
    Inventors: Ru Huang, Fei Tan, Xia An, Qianqian Huang, Dong Yang, Xing Zhang
  • Publication number: 20130161757
    Abstract: The present invention discloses a CMOS device of reducing charge sharing effect and a fabrication method thereof. The present invention has an additional isolation for trapping carriers disposed right below an isolation region. the material of the additional isolation region is porous silicon. Since porous silicon is a functional material of spongy structure by electrochemistry anodic oxidizing monocrystalline silicon wafer, there are a large number of microvoids and dangling bonds on the surface layer of the porous silicon. These defects may form defect states in a center of forbidden band of the porous silicon, the defect states may trap carriers so as to cause an increased resistance. And with an increase of density of corrosion current, porosity increases, and defects in the porous silicon increase.
    Type: Application
    Filed: April 16, 2012
    Publication date: June 27, 2013
    Inventors: Ru Huang, Fei Tan, Xia An, Qianqian Huang, Dong Yang, Xing Zhang
  • Publication number: 20130119445
    Abstract: A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 16, 2013
    Applicant: PEKING UNIVERSITY
    Inventors: Ru Huang, Fei Tan, Xia An, Qianqian Huang, Dong Yang, Xing Zhang
  • Publication number: 20130013245
    Abstract: The present invention discloses a method for obtaining a distribution of charges along a channel of a MOS transistor, which is used for obtaining distributions of interface states charges and charges of a gate dielectric layer in the MOS transistor. The method includes: adding a MOS transistor into a test circuit; measuring two charge pumping current curves when a source terminal is open-circuited or when a drain terminal is open-circuited before and after a stress is applied by using a charge pumping current test method, where one of the two charge pumping current curves is an original curve and the other one is an post-stress curve; finding a point B corresponding to a point A on the original curve on the post-stress curve, and estimating amount of locally-generated interface states charges and charges of the gate dielectric layer by a variation of the charge pumping current and a variation in a voltage at a local point.
    Type: Application
    Filed: October 28, 2011
    Publication date: January 10, 2013
    Applicant: PEKING UNIVERSITY
    Inventors: Ru Huang, Dong Yang, Fei Tan, Xia An, Xing Zhang
  • Publication number: 20110158546
    Abstract: A system and a method are provided for generating a control instruction by using an image pickup device to recognize a user's posture. An electronic device is controlled according to different composite postures. Each composite posture is a combination of the hand posture, the head posture and the facial expression change of the user. Each composite posture indicates a corresponding control instruction. Since the composite posture is more complex than peoples' habitual actions, the possibility of causing erroneous control instruction from unintentional habitual actions of the user will be minimized or eliminated.
    Type: Application
    Filed: March 12, 2010
    Publication date: June 30, 2011
    Applicant: Primax Electronics Ltd.
    Inventors: Ying-Jieh Huang, Xu-Hua Liu, Fei Tan
  • Publication number: 20040069858
    Abstract: The present invention relates to a rail clip, an important fitting part, for the railway made of a new steel XY30 which is one of a high-manganese steel without nickel and which has high strength and high toughness even if it is used in the low-temperature circumstance.
    Type: Application
    Filed: August 18, 2003
    Publication date: April 15, 2004
    Inventors: Fei Tan, Renzhen Song