Abstract: In one aspect, the invention provides a nanobolometer cell including a base layer, a dielectric spacer layer above and adjacent to the base layer, an ultrathin silicon film above and adjacent to the spacer layer, and at least one plasmonic optical antenna resonator above and adjacent to the silicon film.

Abstract: A scalable approach for the synthesis of black phosphorus (BP) material thin films over large areas is described. A red phosphorus (RP) material thin film may be deposited on a substrate followed by conversion to a BP material thin film using high-pressure alone or high pressure and high temperature. A thin-film of dielectric material such as hexagonal boron nitride (hBN) can be formed on a RP material film before the conversion is performed to improve the crystalline quality and stability of the converted BP material. Surprisingly, an atomically sharp and defect-free interface can be formed between the converted BP material and hBN. The BP material has high crystalline uniformity and can be used to fabricate thin-film transistors and optoelectronic devices such as infrared photodetectors.

Abstract: A system for labeling an object uses at least one object label made from a material that absorbs and reflects incident energy uniformly across all wavelengths of incident energy at a ratio proportional to a thickness of the material and that includes a pattern having variations in the thickness of the material along at least one of two orthogonal directions across the label. An interrogator directs a predetermined wavelength of radiation to the at least one label, and a reader to receives reflected radiation from the label at the predetermined wavelength and interprets the reflected radiation to recognize the pattern.

Abstract: A system for labeling an object uses at least one object label made from a material that absorbs and reflects incident energy uniformly across all wavelengths of incident energy at a ratio proportional to a thickness of the material and that includes a pattern having variations in the thickness of the material along at least one of two orthogonal directions across the label. An interrogator directs a predetermined wavelength of radiation to the at least one label, and a reader to receives reflected radiation from the label at the predetermined wavelength and interprets the reflected radiation to recognize the pattern.

Abstract: A scalable approach for the synthesis of black phosphorus (BP) material thin films over large areas is described. A red phosphorus (RP) material thin film may be deposited on a substrate followed by conversion to a BP material thin film using high-pressure alone or high pressure and high temperature. A thin-film of dielectric material such as hexagonal boron nitride (hBN) can be formed on a RP material film before the conversion is performed to improve the crystalline quality and stability of the converted BP material. Surprisingly, an atomically sharp and defect-free interface can be formed between the converted BP material and hBN. The BP material has high crystalline uniformity and can be used to fabricate thin-film transistors and optoelectronic devices such as infrared photodetectors.

Abstract: A system for labeling an object uses at least one object label made from a material that absorbs and reflects incident energy uniformly across all wavelengths of incident energy at a ratio proportional to a thickness of the material and that includes a pattern having variations in the thickness of the material along at least one of two orthogonal directions across the label. An interrogator directs a predetermined wavelength of radiation to the at least one label, and a reader to receives reflected radiation from the label at the predetermined wavelength and interprets the reflected radiation to recognize the pattern.

Abstract: The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.

Abstract: Structures and methods for cloaking an object to electromagnetic radiation at the microwave and terahertz frequencies include disposing a plurality of graphene sheets about the object. Intermediate layers of a transparent dielectric material can be disposed between graphene sheets to optimize the performance. In other embodiments, the graphene can be formulated into a paint formulation or a fabric and applied to the object. The structures and methods absorb at least a portion of the electromagnetic radiation at the microwave and terabyte frequencies.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than >1e1013 cm?2, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e1013 cm?2>n>0 cm?2, which is effective to absorb the electromagnetic radiation.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than >1e1013 cm?2, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e1013 cm?2>n>0 cm?2, which is effective to absorb the electromagnetic radiation.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than >1e1013 cm?2, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e1013 cm?2>n>0 cm?2, which is effective to absorb the electromagnetic radiation.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing doped graphene sheets about the object to be shielded. The doped graphene sheets have a dopant concentration that is effective to reflect and/or absorb the electromagnetic radiation.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than>1e1013 cm?2, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e1013 cm?2>n>0 cm?2, which is effective to absorb the electromagnetic radiation.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than >1e1013 cm?2, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e1013 cm?2>n>0 cm?2, which is effective to absorb the electromagnetic radiation.

Abstract: A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device.

Abstract: A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device.

Abstract: A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.

Abstract: A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device.

Abstract: A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device.

Abstract: An electromagnetic device and method for fabrication includes a substrate and a layer of graphene formed on the substrate. A metallization layer is patterned on the graphene. The metallization layer forms electrodes such that when the graphene is excited by light, terahertz frequency radiation is generated.