Abstract: A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

Abstract: A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring.

Abstract: A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.

Abstract: The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.

Abstract: An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

Abstract: An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

Abstract: The present invention is a method and an apparatus for tuning an optical delay line. In one embodiment, an optical delay line includes at least one ring resonator in which light is guided or is confined and at least one heater positioned laterally from the ring resonator. The heater produces heat in a localized area, allowing for the tuning of individual delay elements with minimal crosstalk.

Abstract: A method of implementing optical deflection switching includes directing a tuning operation at a specific region of coupled optical resonators coupled to an input port, a first output port and a second output port, the coupled optical resonator including a plurality of cascaded unit cells; wherein the tuning operation interrupts a resonant coupling between one or more of the unit cells of the coupled resonators so as to cause an input optical signal from the input port to be directed from the first output port to the second output port.

Abstract: An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

Abstract: The present invention is a waveguide photodetector. In one embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined and a detection layer formed on the waveguide layer where guided light is detected. Each of the waveguide layer and the detection layer allows for the guiding of no more than a single mode of light for a given polarization. In another embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined, a detection layer formed on the waveguide layer where guided light is detected, a first electrical contact coupled to the detection layer, and a second electrical contact coupled to the detection layer. The first electrical contact and the second electrical contact are disposed in a spaced-apart, substantially parallel manner relative to each other.

Abstract: The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.

Abstract: The present invention is a method and an apparatus for tuning an optical delay line. In one embodiment, an optical delay line includes at least one ring resonator in which light is guided or is confined and at least one heater positioned laterally from the ring resonator. The heater produces heat in a localized area, allowing for the tuning of individual delay elements with minimal crosstalk.

Abstract: A polarization insensitive semiconductor optical amplifier (SOA) is provided. The SOA includes an active waveguide, a passive waveguide, and a taper coupler for coupling optical energy from the passive waveguide into the active waveguide, wherein the taper coupler has width W varying relative to position along a main axis z of propagation of the SOA in proportion to the minimum value of 1/CTE 01(z) 1/CTM 01(z), where CTE 01(z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse electric polarization as a function of the position z, and CTM 01(z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse magnetic polarization as a function of the position z.

Abstract: An asymmetric twin waveguide (ATG) structure with quantum-well intermixing in the taper region of the active waveguide is disclosed. The structure comprises a first waveguide, a second waveguide, and a taper formed in the second waveguide. The taper has an intermixed area formed therein comprising a plurality of quantum wells intermixed with a plurality of barriers. The quantum wells and barriers may be intermixed using plasma-enhanced intermixing such as, for example, Argon plasma enhanced intermixing. Quantum-well intermixing reduces absorption loss normally encountered in the movement of light between waveguides.

Abstract: The present invention is a waveguide photodetector. In one embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined and a detection layer formed on the waveguide layer where guided light is detected. Each of the waveguide layer and the detection layer allows for the guiding of no more than a single mode of light for a given polarization. In another embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined, a detection layer formed on the waveguide layer where guided light is detected, a first electrical contact coupled to the detection layer, and a second electrical contact coupled to the detection layer. The first electrical contact and the second electrical contact are disposed in a spaced-apart, substantially parallel manner relative to each other.

Abstract: An asymmetric twin waveguide (ATG) structure with quantum-well intermixing in the taper region of the active waveguide is disclosed. The structure comprises a first waveguide, a second waveguide, and a taper formed in the second waveguide. The taper has an intermixed area formed therein comprising a plurality of quantum wells intermixed with a plurality of barriers. The quantum wells and barriers may be intermixed using plasma-enhanced intermixing such as, for example, Argon plasma enhanced intermixing. Quantum-well intermixing reduces absorption loss normally encountered in the movement of light between waveguides.

Abstract: A polarization insensitive semiconductor optical amplifier (SOA) is provided. The SOA includes an active waveguide, a passive waveguide, and a taper coupler for coupling optical energy from the passive waveguide into the active waveguide, wherein the taper coupler has width W varying relative to position along a main axis z of propagation of the SOA in proportion to the minimum value of 1/CTE 01 (z) 1/CTM 01 (z), where CTE 01 (z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse electric polarization as a function of the position z, and CTM 01 (z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse magnetic polarization as a function of the position z.

Abstract: A photonic integrated circuit comprises a first waveguide with a first mode of light propagating therein and a second waveguide with a second mode of light propagating therein. The first and second modes of light have different effective indices of refraction. A taper formed in the second waveguide facilitates communication of light between waveguides. Each of the first and second waveguides operate to perform at least one of the generating light, detecting light, and transporting light.

Abstract: A photonic integrated circuit comprises a first waveguide with a first mode of light propagating therein and a second waveguide with a second mode of light propagating therein. The first and second modes of light have different effective indices of refraction. A taper formed in the second waveguide facilitates communication of light between waveguides. Each of the first and second waveguides operate to perform at least one of the generating light, detecting light, and transporting light.