Abstract: A method for ascertaining a position of a rotor relative to a stator of an electrical machine having a permanently excited rotor and a plurality of windings for the stator or vice versa; in response to an energization of at least one of the windings, a change in an inductance of the winding being ascertained; and, on the basis of the change in the inductance of the winding, the position of the rotor being ascertained relative to the stator.

Abstract: A longitudinally guiding driver assistance system in a motor vehicle includes a detection system for detecting currently applying events and relevant events lying ahead, which require an adaptation of the permissible maximum speed, and a function unit which, when detecting a relevant event, while taking into account the location of the relevant event lying ahead, determines a location-dependent point in time, whose reaching causes the function unit to initiate an output of prompt information for permitting an automatic adaptation of the currently permissible maximum speed to a new permissible maximum speed. The function unit is designed, in the case of an activation of the longitudinally guiding driver assistance system, while taking into account a detected currently applying event, to initiate a first output of prompt information for permitting an automatic first setting of the currently applying permissible maximum speed as the new permissible maximum speed.

Abstract: The invention relates to an internal combustion engine (1), comprising a fresh gas line (2) and an exhaust gas line (3), wherein a heat exchanger (11) is installed in the exhaust gas line (3), which heat exchanger is a component of a fluid circuit (12), which has at least one expansion device (15) in addition to the heat exchanger (12), which expansion device contains a mechanical output device (17). According to the invention, an internal combustion engine (1) is provided that allows waste heat from the exhaust gas line (3) of the internal combustion engine (1) to be used for a hydraulic system. This is achieved in that the output device (17) is connected to a hydraulic pump (18), which is connected directly or indirectly to a working machine, which is connected to a drive shaft (8) of a motor vehicle, in which the internal combustion engine (1) is installed in order to drive said motor vehicle.

Abstract: In one embodiment, a semiconductor is provided comprising a substrate and a plurality of wiring layers and dielectric layers formed on the substrate, the wiring layers implementing a circuit. The dielectric layers separate adjacent ones of the plurality of wiring layers. A first passivation layer is formed on the plurality of wiring layers. A first contact pad is formed in the passivation layer and electrically coupled to the circuit. A wire is formed on the passivation layer and connected to the contact pad. A through silicon via (TSV) is formed through the substrate, the plurality of wiring and dielectric layers, and the passivation layer. The TSV is electrically connected to the wire formed on the passivation layer. The TSV is electrically isolated from the wiring layers except for the connection provided by the metal wire formed on the passivation layer.

Abstract: A method and device for planning a recovery of energy from an exhaust gas of a vehicle is provided. The method and device include: estimating an operating behavior of the vehicle on a route to be traveled by the vehicle; and planning the recovery of energy from the exhaust gas of the vehicle based on a likelihood that the estimated operating behavior of the vehicle corresponds to an operating behavior that is suitable for the recovery.

Abstract: In one embodiment, a semiconductor is provided comprising a substrate and a plurality of wiring layers and dielectric layers formed on the substrate, the wiring layers implementing a circuit. The dielectric layers separate adjacent ones of the plurality of wiring layers. A first passivation layer is formed on the plurality of wiring layers. A first contact pad is formed in the passivation layer and electrically coupled to the circuit. A wire is formed on the passivation layer and connected to the contact pad. A through silicon via (TSV) is formed through the substrate, the plurality of wiring and dielectric layers, and the passivation layer. The TSV is electrically connected to the wire formed on the passivation layer. The TSV is electrically isolated from the wiring layers except for the connection provided by the metal wire formed on the passivation layer.

Abstract: In one embodiment, a semiconductor is provided comprising a substrate and a plurality of wiring layers and dielectric layers formed on the substrate, the wiring layers implementing a circuit. The dielectric layers separate adjacent ones of the plurality of wiring layers. A first passivation layer is formed on the plurality of wiring layers. A first contact pad is formed in the layer and connected to the contact pad. A through silicon via (TSV) is formed through the substrate, the plurality of wiring and dielectric layers, and the passivation layer. The TSV is electrically connected to the wire formed on the passivation layer. The TSV is electrically isolated from the wiring layers except for the connection provided by the metal wire formed on the passivation layer.

Abstract: In one embodiment, a semiconductor is provided comprising a substrate and a plurality of wiring layers and dielectric layers formed on the substrate, the wiring layers implementing a circuit. The dielectric layers separate adjacent ones of the plurality of wiring layers. A first passivation layer is formed on the plurality of wiring layers. A first contact pad is formed in the layer and connected to the contact pad. A through silicon via (TSV) is formed through the substrate, the plurality of wiring and dielectric layers, and the passivation layer. The TSV is electrically connected to the wire formed on the passivation layer. The TSV is electrically isolated from the wiring layers except for the connection provided by the metal wire formed on the passivation layer.

Abstract: A semiconductor wafer (100) having a regular pattern of predetermined separation lanes (102) is provided, wherein the predetermined separation lanes (102) are configured in such a way that the semiconductor wafer is singularizable along the regular pattern.

Abstract: A battery system for a motor vehicle is described having at least one electrochemical cell and at least one latent heat accumulator, in which the latent heat accumulator has a phase-change material as the storage medium. A crystallization initiation device is provided for triggering an exothermic phase transition of the phase-change material, the crystallization initiation device being triggered with the aid of a control unit.

Abstract: Method for fabricating a trench isolation structure The invention provides a method for fabricating a trench isolation structure, comprising the following steps: forming a mask (3) on a substrate (1); forming at least one trench (2) in the substrate (1) by means of the mask (3); carrying out selective deposition of a first insulation material (5) to at least partially fill the at least one trench (2) in the substrate (1) with the insulation material (5) in the presence of the mask (3); and applying a second insulation material (6) over the entire surface of the structure in order to fill the at least one trench (2) in the substrate (1) at least up to the top side of the mask (3).