Abstract: A process for the production of electrodes for fuel cells includes applying an ink consisting of a mixture of at least a carbon powder, an ion-conducting polymer and a fluid, the fluid containing at least 3% of an alkanediol, and a fuel cell electrode which can be obtained by applying such an electrode ink to a substrate, followed by a heat treatment.

Abstract: A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).

Abstract: A magnetic memory device for reading and writing a data state comprises at least three terminals including first, second, and third terminals. The magnetic memory device also includes a spin transfer (ST) driven element, disposed between the first terminal and the second terminal, and a readout element, disposed between the second terminal and the third terminal. The ST driven element includes a first free layer, and a readout element includes a second free layer. A magnetization direction of the second free layer in the readout element indicates a data state. A magnetization reversal of the first free layer within the ST driven element magnetostatically causes a magnetization reversal of the second free layer in the readout element, thereby recording the data state.

Abstract: A projection display uses a matrix of digital correction factors defining deflection correction factors between which linear interpolation is used for intermediate points on the display. A circuit for generating a correction signal to correct image distortion on a display screen, comprises a memory storing displacement values corresponding to spaced points on the screen in a grid of rows and columns. The displacement values of the grid generally define correction curves for correcting the image distortion without introducing significant banded regions on the display screen. An interpolator is coupled to the memory for interpolating intermediate values between adjacent ones of the stored displacement values, and a digital to analog converter is coupled to the interpolator for providing the correction signal.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract: A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.

Abstract: A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).

Abstract: A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

Abstract: A method and system for providing a magnetic element is disclosed. The method and system include providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method and system also include defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish. Polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.

Abstract: A valve-regulated lead acid (VRLA) battery cell (2,40) has positive and negative plates (10,11,41,42) separated by separator media (12,43) and held together under pressure. The separator is adapted to support therein an electrolyte. Each plate has a first single or plurality of tabs (12,13,46) on a first side and a second single or plurality of tabs (15,16,47) on a second side of the plate, each tab being connected to a busbar (17,18,49,50) to form positive and negative busbars on each of the first and second sides of the plate. The cell may be alternatively configured in a spirally-wound arrangement or in a prismatic arrangement of flat plates. The cell may be constructed of a plurality of such positive and negative plates. A VLRA battery (1, 40) may be constructed of one or a plurality of such VLRA cells, in which case the busbars of neighboring cells are connected by welded joints. The busbars are serviced by at least plural pairs of positive and negative terminals (24,25,33,34,52,53,54,55).

Abstract: A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

Abstract: The invention relates to an octenidine antiseptic for wounds and mucous membranes that is characterized by a content in ethanol and a physiologically acceptable organic acid.

Abstract: A process is described for the production of electrodes for, for example, fuel cells by applying an ink consisting of a mixture of at least a carbon powder, an ion-conducting polymer and a fluid, the fluid containing at least 3% of an alkanediol, and a fuel cell electrode which can be obtained by applying such an electrode ink to a substrate, followed by a heat treatment. The fuel cell electrode is very suitable for use in solid polymer fuel cells.

Abstract: A valve-regulated lead acid (VRLA) battery cell (2,40) has positive and negative plates (10,11,41,42) separated by separator media (12,43) and held together under pressure. The separator is adapted to support therein an electrolyte. Each plate has a first single or plurality of tabs (12,13,46) on a first side and a second single or plurality of tabs (15,16,47) on a second side of the plate, each tab being connected to a busbar (17,18,49,50) to form positive and negative busbars on each of the first and second sides of the plate. The cell may be alternatively configured in a spirally-wound arrangement or in a prismatic arrangement of flat plates. The cell may be constructed of a plurality of such positive and negative plates. A VLRA battery (1, 40) may be constructed of one or a plurality of such VLRA cells, in which case the busbars of neighboring cells are connected by welded joints. The busbars are serviced by at least plural pairs of positive and negative terminals (24,25,33,34,52,53,54,55).

Abstract: A computer controlled display system for automatically generating quality assurance contract requirements. The quality level of each of a set of quality attributes of a software supplier is assessed, and at least one contract requirement for each of said quality attributes for said supplier is generated based upon the quality level of said attribute. The assessment of the quality level preferably involves determining one of a plurality of quality levels for each of said set of quality attributes, and generating a different contract requirement for each of said quality levels for each attribute. The set of quality attributes may consist of a single overall quality characteristic having several predetermined quality levels. In such a case, there is generated a plurality of contract requirements for each of said predetermined quality levels.

Abstract: A valve-regulated lead acid (VRLA) battery cell (2,40) has positive and negative plates (10,11,41,42) separated by separator media (12,43) and held together under pressure. The separator is adapted to support therein an electrolyte. Each plate has a first single or plurality of tabs (12,13,46) on a first side and a second single or plurality of tabs (15,16,47) on a second side of the plate, each tab being connected to a busbar (17,18,49,50) to form positive and negative busbars on each of the first and second sides of the plate. The cell may be alternatively configured in a spirally-wound arrangement or in a prismatic arrangement of flat plates. The cell may be constructed of a plurality of such positive and negative plates. A VLRA battery (1, 40) may be constructed of one or a plurality of such VLRA cells, in which case the busbars of neighboring cells are connected by welded joints. The busbars are serviced by at least plural pairs of positive and negative terminals (24,25,33,34,52,53,54,55).

Abstract: A method and apparatus for solving grid point layouts using massively parallel computers to solve each wiring connection or grid point independently. By leaving the solution in a global perspective, and solving the problem using fine grain parallelism, wiring solutions and optimized layouts are achieved in a shorter amount of time.

Abstract: A fully integrated, low cost, amplified electro-acoustic loudspeaker is disclosed in which an amplifier circuit (30, 130, 230, 330, 930, 1030), radio-frequency receiver amplifier circuit (430, 530), optical receiver amplifier circuit (630, 730), or network based amplifier circuit (830) is directly mounted on the loudspeaker's magnetic assembly (105, 505, 705, 805), contained within the loudspeaker's moving assembly (20, 29, 629, 42, 45, 50, 65), or a combination thereof. The amplified loudspeaker's magnetic assembly (5, 105, 405, 505, 705, 805, 905, 1005) is utilized as an electro-magnetic interference shield and/or a heat dissipating element for the attached electronic circuitry. In selected embodiments of the amplified loudspeaker system, the former (42) containing voice coil (45) is additionally utilized for convection cooling of the amplifier circuit (30, 230) or receiver/amplifier circuit combination (430, 630).