Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

Abstract: A capacitive electro-optical modulator includes a silicon layer, a germanium or silicon-germanium strip overlying the silicon layer, and a silicon strip overlying the germanium or silicon-germanium strip. The silicon strip is wider than the germanium or silicon-germanium strip. An insulator is laterally adjacent the germanium or silicon-germanium strip and the silicon strip and has an upper surface that is flush with an upper surface of the silicon strip. An insulating layer overlies the insulator and the silicon strip. A layer of III-V material overlies the insulating layer. The layer of III-V material is formed as a third strip arranged facing the silicon strip and separated therefrom by a portion of the insulating layer.

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

Abstract: In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.

Abstract: A method for making an electro-optic device includes forming a first photonic device having a first material in a first photonic layer over a substrate layer. A second photonic layer with a second photonic device is formed over the first photonic layer and includes a second material different than the first material. A dielectric layer is formed over the second photonic layer. A first electrically conductive via extending through the dielectric layer and the second photonic layer is formed so as to couple to the first photonic device. A second electrically conductive via extending through the dielectric layer and coupling to the second photonic device is formed. A third electrically conductive via extending through the dielectric layer, the second photonic layer, and the first photonic layer is formed so as to couple to the substrate layer.

Abstract: A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried insulating layer permit access to the unstressed silicon support substrate under the first and second film zones. An N channel transistor is formed from the first film zone and a P channel transistor is formed from the second film zone. The second film zone may comprise germanium enriched silicon forming a compressive-stressed region.

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: A method for making an electro-optic device includes forming a first photonic device having a first material in a first photonic layer over a substrate layer. A second photonic layer with a second photonic device is formed over the first photonic layer and includes a second material different than the first material. A dielectric layer is formed over the second photonic layer. A first electrically conductive via extending through the dielectric layer and the second photonic layer is formed so as to couple to the first photonic device. A second electrically conductive via extending through the dielectric layer and coupling to the second photonic device is formed. A third electrically conductive via extending through the dielectric layer, the second photonic layer, and the first photonic layer is formed so as to couple to the substrate layer.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric layer over the second photonic layer, and a first electrically conductive via extending through the dielectric layer and the second photonic layer to couple to the first photonic device, and a second electrically conductive via extending through the dielectric layer and coupling to the second photonic device. The electro-optic device may include a third electrically conductive via extending through the substrate layer, the second photonic layer, and the first photonic layer to couple to the substrate layer.