Patents by Inventor Frederick Wu
Frederick Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060246699Abstract: Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.Type: ApplicationFiled: March 20, 2006Publication date: November 2, 2006Inventors: Timothy Weidman, Arulkumar Shanmugasundram, Kapila Wijekoon, Schubert Chu, Frederick Wu, Kavita Shah
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Publication number: 20060074725Abstract: A method (and system) for simulating an implementation model of a business solution includes simulating business artifacts that invoke the implementation model of the business solution, at least one of simulating and executing a component of the business solution during at least one intermediate stage of a development and integration lifecycle of the implementation model, and analyzing results from the simulation of the implementation model during said at least one intermediate stage of the development and integration lifecycle of the implementation model, thereby allowing a user to simulate an implementation model using both real solution components and simulated solution components.Type: ApplicationFiled: September 30, 2004Publication date: April 6, 2006Applicant: International Business Machines CorporationInventors: Ying Huang, Makoto Kano, Akio Koide, Bala Ramachandran, Frederick Wu
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Publication number: 20050287807Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: ApplicationFiled: August 18, 2005Publication date: December 29, 2005Inventors: Ken Lai, Jeong Byun, Frederick Wu, Ramanujapuran Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok Sinha, Hua Chung, Hongbin Fang, Alfred Mak, Michael Yang, Ming Xi
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Publication number: 20050108022Abstract: Automomic business processes management solutions have capabilities to adapt themselves to changes in the business environment. These autonomic business solutions are built by wiring together autonomic solution components called BPbots (Business Process robots). BPbots are granular solution components representing an aspect of a business process. In general, BPbots consist of two parts, an execution module and a managerial module. The execution module represents the standard, non-autonomic solution component, such as a standard process flow model describing the long-running flow or business adapter describing the communication of the solution with service providers (such as applications). The managerial module is responsible for the autonomic behavior of the BPbot. The managerial component has the ability to monitor the execution module, analyze the performance, plan new, more appropriate execution patterns and change the behavior of the execution module according to the new plan.Type: ApplicationFiled: November 13, 2003Publication date: May 19, 2005Inventors: Kamal Bhattacharya, Ying Huang, Jun-Jang Jeng, Shubir Kapoor, Santhosh Kumaran, Yingjie Li, Anil Nigam, Frederick Wu, Liangzhao Zeng
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Publication number: 20050108680Abstract: A software architecture can include an artifact layer and a configuration layer. The artifact layer can contain multiple application independent artifacts. A configuration layer can contain at least one application. The application can include multiple states in which the application executes instructions. The states can exist within execution spaces that are distributed across a network. The application uses artifacts of the artifact layer, which can operate in a state dependent manner.Type: ApplicationFiled: November 17, 2003Publication date: May 19, 2005Applicant: International Business Machines CorporationInventors: Tsz Cheng, Ying Huang, Santhosh Kumaran, Amaresh Rajasekharan, Mathews Thomas, Frederick Wu, Yiming Ye
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Publication number: 20050091093Abstract: A system and method for creating and managing a business process integration solution comprises modeling a business strategy including elements representing business measurements and initiatives according to defined business goals and objectives of an entity; modeling business operations of the entity in terms of business process elements including process tasks, artifact flows and artifact repositories, and business commitment elements including incorporating key performance indicators; mapping elements of the strategy model with artifact and process elements of the operations model; and, measuring business performance and comparing performance measurements against the key performance indicators. The business strategy and operation model process elements may be continuously refined over a solution development lifecycle as a result of process measurements and comparing. A business level modeling language is further implemented for formally representing the business operations.Type: ApplicationFiled: October 24, 2003Publication date: April 28, 2005Applicant: INERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kumar Bhaskaran, Stephen Buckley, Nathan Caswell, Hung-Yang Chang, Joachim Frank, Rainer Hauser, Ying Huang, Shubir Kapoor, Jana Koehler, Santhosh Kumaran, Prabir Nandi, Anil Nigam, Zhong Tian, Jian Wang, Frederick Wu, Jun Zhu
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Publication number: 20050080640Abstract: A system for generating a business process integration and management (BPIM) solution includes an assembler which assembles a plurality of solution artifacts to form a platform-independent solution template, a template implementer which implements the platform-independent solution template to form a template implementation, and a customizer which customizes the template implementation to generate a BPIM solution.Type: ApplicationFiled: October 10, 2003Publication date: April 14, 2005Applicant: International Business Machines CorporationInventors: Kumar Bhaskaran, Ying Huang, Shubir Kapoor, Santhosh Kumaran, Prabir Nandi, Zhong Tian, Jian Wang, Frederick Wu
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Patent number: 6548402Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.Type: GrantFiled: June 11, 1999Date of Patent: April 15, 2003Assignee: Applied Materials, Inc.Inventors: Shulin Wang, Ming Xi, Frederick Wu, Ramanujapuram A. Srinivas, Yehuda Demayo, Zvi Lando, Mei Chang, Russell C. Ellwanger
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Patent number: 6482746Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.Type: GrantFiled: June 5, 2001Date of Patent: November 19, 2002Assignee: Applied Materials, Inc.Inventors: Anand Vasudev, Toshio Itoh, Ramamujapuram A. Srinivas, Frederick Wu, Li Wu, Brian Boyle, Mei Chang
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Publication number: 20020064598Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.Type: ApplicationFiled: June 11, 1999Publication date: May 30, 2002Inventors: SHULIN WANG, MING XI, FREDERICK WU, RAMANUJAPURAM A. SRINIVAS, YEHUDA DEMAYO, ZVI LANDO, MEI CHANG, RUSSELL C. ELLWANGER
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Publication number: 20010027030Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.Type: ApplicationFiled: June 5, 2001Publication date: October 4, 2001Applicant: Applied Materials, Inc.Inventors: Anand Vasudev, Toshio Itoh, Ramamujapuram A. Srinivas, Frederick Wu, Li Wu, Brian Boyle, Mei Chang
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Patent number: 6242347Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.Type: GrantFiled: September 30, 1998Date of Patent: June 5, 2001Assignee: Applied Materials, Inc.Inventors: Anand Vasudev, Toshio Itoh, Ramanujapuram A. Srinivas, Frederick Wu, Li Wu, Brian Boyle, Mei Chang
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Patent number: 6221174Abstract: The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.Type: GrantFiled: February 11, 1999Date of Patent: April 24, 2001Assignee: Applied Materials, Inc.Inventors: Fufa Chen, Yin Lin, Jianhua Hu, Frederick Wu, Ming Xi, Li Wu