Abstract: A semiconductor structure including a substrate, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and in physical contact with the first dielectric layer, an opening on the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer, an conductive layer disposed on the second dielectric layer at two sides of the opening and in physical contact with the second dielectric layer, a contact structure disposed in the lower portion of the opening, and a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first electrode, a second electrode on one side of the first electrode, and a resistive switching film between the first electrode and the second electrode. The first electrode, the resistive switching film and the second electrode are arranged along the first direction. The second semiconductor structure includes a first via and a first metal layer on the first via along a second direction and electrically connected to the first via. The first direction is perpendicular to the second direction. An upper surface of the first electrode, an upper surface of the second electrode, an upper surface of the resistive switching film and an upper surface of the first metal layer are coplanar.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer has two adhering surfaces having a same area and a middle cross section located at a middle position between the two adhering surfaces. An area of the middle cross section is 115% to 200% of an area of any one of the two adhering surfaces. The adhesive layer can provide for light to travel therethrough, and enables the light therein to change direction and to attenuate. The sensor chip, the adhesive layer, and the light-permeable layer are embedded in the encapsulant, and an outer surface of the light-permeable layer is at least partially exposed from the encapsulant.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on the substrate along a predetermined direction for being electrically coupled to each other, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer is formed with at least one type of a buffering cavity, wave-shaped slots, and rectangular slots, which penetrate therethrough along the predetermined direction. The buffering cavity can be located in the adhesive layer, and any one type of the wave-shaped slots and the rectangular slots can be respectively recessed in an inner side and an outer side of the adhesive layer. A minimum width of the adhesive layer is greater than or equal to 50% of a predetermined width between the inner side and the outer side.

Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

Abstract: A dual-band antenna module includes a first antenna structure and a second antenna structure. The first antenna structure includes a first insulating substrate, a conductive metal layer, a plurality of grounding supports, and a first feeding pin. The second antenna structure includes a second insulating substrate, a top metal layer, a bottom metal layer, and a second feeding pin. The conductive metal layer is disposed on the first insulating substrate. The grounding supports are configured for supporting the first insulating substrate. The second insulating substrate is disposed above the first insulating substrate. The top metal layer and the bottom metal layer are respectively disposed on a top side and a bottom side of the second insulating substrate. The first frequency band signal transmitted or received by the first antenna structure is smaller than the second frequency band signal transmitted or received by the second antenna structure.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. The display may have a number of independently controllable viewing zones. Each viewing zone displays a respective two-dimensional image. Each eye of the viewer may receive a different one of the two-dimensional images, resulting in a perceived three-dimensional image. The electronic device may include display pipeline circuitry that generates and processes content to be displayed on the lenticular display. Content generating circuitry may generate content that includes a plurality of two-dimensional images, each two-dimensional image corresponding to a respective viewing zone. Pixel mapping circuitry may be used to map the two-dimensional images to the array of pixels in the lenticular display. The array of pixels may have a diagonal layout. An offset map may be used by the pixel mapping circuitry to account for the diagonal layout.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. A plurality of lenticular lenses may extend across the length of the display. The lenticular lenses may be configured to enable stereoscopic viewing of the display such that a viewer perceives three-dimensional images. The display may have a number of independently controllable viewing zones. The viewer may be particularly susceptible to artifacts caused by crosstalk at the edge viewing zones within the primary field of view of the display. Certain types of content may also be more vulnerable to crosstalk than other types of content. Therefore, to mitigate crosstalk artifacts, the pixel value for each pixel may be adjusted based on the viewing zone of the respective pixel and content information (such as texture information or brightness information) associated with the respective pixel.

Abstract: The disclosure provides at compounds of Formula I, compositions comprising the same, and methods of using the same, including use in treating diseases, disorders of conditions mediated by the signaling of formyl peptide receptor 1 (FPR1).

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate and a gate structure. The substrate includes a fin. The fin includes a source region and a drain region spaced apart from the source region. The gate structure is located between the source region and the drain region. The gate structure includes a work function layer. The work function layer includes a compound of a metal material and a Group VIA material.

Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A multi-piece wheel frame includes a rim and a disc. The rim includes a barrel, and an outer rim portion protruding outwardly from the barrel. The outer rim portion forms an inclined surface, and a ring edge surface connected to an outer edge of the inclined surface and cooperating with the inclined surface to form an obtuse angle. The disc is fixed to the rim, and includes a disc core, a plurality of spoke portions extending radially outwardly from the disc core, and a reinforced ring portion connected to the spoke portions and fixed to the outer rim portion. The reinforced ring portion abuts against at least one of the inclined surface and the ring edge surface.

Abstract: A resistive memory device includes a dielectric layer, a via connection structure, a stacked structure, and an insulating structure. The via connection structure is disposed in the dielectric layer. The stacked structure is disposed on the via connection structure and the dielectric layer. The insulating structure penetrates through the stacked structure in a vertical direction and divides the stacked structure into a first memory cell unit and a second memory cell unit. The first memory cell unit includes a first bottom electrode, and the second memory cell unit includes a second bottom electrode separated from the first bottom electrode by the insulating structure. The via connection structure is electrically connected with the first bottom electrode and the second bottom electrode.

Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.

Abstract: Provided are a wireless signal apparatus and an elevator service request system and method, which belong to the field of intelligent elevator control technologies. In the elevator service request system of the present invention, a corresponding wireless signal is broadcast by a wireless signal apparatus of an elevator system and the wireless signal is received by a personal mobile terminal. The personal mobile terminal is provided with an elevator service request application component running at an application layer of an operating system thereof. The wireless signal apparatus includes a location notification unit used for broadcasting corresponding location marker data. The elevator service request system includes a wake-up module running at a system layer of the operating system of the personal mobile terminal. The wake-up module is used for waking up the elevator service request application component in response to reception of the location marker data.