Abstract: Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate.

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

Abstract: Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.

Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a shroud for controlling gas flow in a process chamber includes a closed walled body having an upper end and a lower end, the closed walled body defining a first opening of the shroud at the lower end and a second opening of the shroud at the upper end, wherein the second opening is offset from the first opening; and a top wall disposed atop a portion of the upper end of the closed walled body in a position above the first opening to define, together with a remaining portion of the upper end of the closed walled body, the second opening, wherein the shroud is configured to divert a gas flow from the second opening through the first opening.