Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit formed on the substrate; and an optical amplification part that amplifies light propagating in a predetermined direction from the light source unit and emits the amplified light in an emission direction intersecting with the substrate surface. The optical amplification part includes a conductive region extending in the predetermined direction along the substrate surface from the light source unit, and a nonconductive region formed around the conductive region. The conductive region includes a first region extending from the light source unit and having a predetermined width as seen from a direction perpendicular to the substrate surface, and a second region connected to the first region and having a width widened relative to the predetermined width of the first region, the second region being configured to expand the propagation light in a direction intersecting with the predetermined direction.

Abstract: An optical transceiver supports bidirectional communication with another optical transceiver that is a communications partner via a single-mode optical fiber. A surface emitting laser has a T-band oscillation wavelength that is shorter than the cutoff wavelength of the optical fiber. A photodetector has detection sensitivity with respect to the T band.

Abstract: A technique includes printing a first image including a plurality of edge pixels and a second image with a lower ratio of edges pixels than the first image and an average density equal to that of the first image and determining a value of a processing parameter so that the average densities of the first image and the second image match. The technique is configured to realize appropriate pre-print processing while preventing the average densities from being low due to the excessive pre-print processing or being high due to the insufficient pre-print processing.

Abstract: A beam deflection device includes multiple light-emission structures arranged adjacent to each other in a first direction (X direction). The light-emission structures are each configured to be capable of emitting, from its device surface, a line beam that extends in the first direction in the far field. Furthermore, the light-emission structures are each configured to allow the line beam to be scanned in a second direction (Y direction) that is orthogonal to the first direction.

Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

Abstract: A surface emitting laser has a Vertical-Cavity Surface emitting laser (VCSEL) structure. The VCSEL structure includes an aperture provided by a current confinement structure. An optically discontinuous portion is formed in a top Distributed Bragg Reflector (DBR) of the VCSEL structure such that it is arranged in a region with a gap between it and the aperture.

Abstract: An optical deflection device that achieve both high beam quality and wide angular range of deflection and compatibility with an optical integration technology of silicon photonics. The optical deflection device is a silicon photonics device including a periodic structure of a refractive index. The optical deflection device includes two configurations, which are (1) a configuration in which an optical propagation part where light propagates is a microstructure formed on silicon, and (2) a configuration in which the microstructure constituting the optical propagation part includes a periodic structure that generates slow light and a periodic structure that radiates light. The microstructure formed on the silicon of (1) makes it possible to employ the optical integration technology of silicon photonics and form the optical deflection device. The two periodic structures of (2) make it possible to form a light beam with high beam quality and a wide angular range of deflection.

Abstract: A surface-emitting laser includes an output unit. The output unit has an oblong-shaped VCSEL (vertical-cavity surface-emitting laser) structure. The output unit operates in an oscillation state in which a current that is larger than the oscillation threshold value is injected. The output unit receives a coherent seed light via a coupling surface at one end of the VCSEL structure in the longitudinal direction thereof. The seed light thus received propagates as a slow light through the VCSEL structure in the longitudinal direction thereof while being reflected multiple times in the vertical direction within the VCSEL structure. An output light is extracted from the upper surface of the VCSEL structure.

Abstract: A technique includes printing a first image including a plurality of edge pixels and a second image with a lower ratio of edges pixels than the first image and an average density equal to that of the first image and determining a value of a processing parameter so that the average densities of the first image and the second image match. The technique is configured to realize appropriate pre-print processing while preventing the average densities from being low due to the excessive pre-print processing or being high due to the insufficient pre-print processing.

Abstract: A beam deflection device includes multiple light-emission structures arranged adjacent to each other in a first direction (X direction). The light-emission structures are each configured to be capable of emitting, from its device surface, a line beam that extends in the first direction in the far field. Furthermore, the light-emission structures are each configured to allow the line beam to be scanned in a second direction (Y direction) that is orthogonal to the first direction.

Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit formed on the substrate; and an optical amplification part that amplifies light propagating in a predetermined direction from the light source unit and emits the amplified light in an emission direction intersecting with the substrate surface. The optical amplification part includes a conductive region extending in the predetermined direction along the substrate surface from the light source unit, and a nonconductive region formed around the conductive region. The conductive region includes a first region extending from the light source unit and having a predetermined width as seen from a direction perpendicular to the substrate surface, and a second region connected to the first region and having a width widened relative to the predetermined width of the first region, the second region being configured to expand the propagation light in a direction intersecting with the predetermined direction.

Abstract: The color conversion method may include the steps of taking a color required to be changed as a designated color out of input colors included in a display image to be displayed using an input image signal, taking a conversion color to be designated as an output color after changing the designated color, and performing color conversion of the designated color into the conversion color out of the input colors to output an output image signal for displaying the display image using the input image signal on which the color conversion was performed.

Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

Abstract: A biological information processing device includes: a pulse wave sensor which measures a pulse wave of a user; a body motion sensor which detects a body motion of the user; and a processing unit which performs estimation processing for pulse wave information of the user. The processing unit performs the estimation processing based on body motion information acquired using a signal from the body motion sensor, even if the pulse wave sensor is off.

Abstract: An optical deflection device that achieve both high beam quality and wide angular range of deflection and compatibility with an optical integration technology of silicon photonics. The optical deflection device is a silicon photonics device including a periodic structure of a refractive index. The optical deflection device includes two configurations, which are (1) a configuration in which an optical propagation part where light propagates is a microstructure formed on silicon, and (2) a configuration in which the microstructure constituting the optical propagation part includes a periodic structure that generates slow light and a periodic structure that radiates light. The microstructure formed on the silicon of (1) makes it possible to employ the optical integration technology of silicon photonics and form the optical deflection device. The two periodic structures of (2) make it possible to form a light beam with high beam quality and a wide angular range of deflection.

Abstract: A biological information processing device includes: a pulse wave sensor which measures a pulse wave of a user; a body motion sensor which detects a body motion of the user; and a processing unit which performs estimation processing for pulse wave information of the user. The processing unit performs the estimation processing based on body motion information acquired using a signal from the body motion sensor, even if the pulse wave sensor is off.

Abstract: The measuring device includes: a detecting section including a coil which detects a change in a value of impedance caused by a change in a mold level; an amplifying section which amplifies an output of the detecting section; a pre-pouring calibration section which determines a reference value of a positive feedback ratio of the amplifying section in environmental conditions before pouring of molten metal; and a mold oscillation signal calibration section which obtains a standard value of difference in an output of the measuring device, the standard value of difference corresponding to a known value of amplitude of mold oscillation when the positive feedback ratio is the reference value, obtains a deviation of measurement based on a difference between the maximum value and the minimum value of the output in mold oscillation and the standard value, and corrects the positive feedback ratio within a predetermined range including the reference value.

Abstract: An abnormality prediction device includes a detection unit that detects detection information including at least one of biological information of a user and body motion information regarding a body motion of the user, a premonitory symptom determination unit (control unit) that determines whether a premonitory symptom has occurred in the user on the basis of the detection information detected by the detection unit and a premonitory pattern which is a pattern of the detection information according to the premonitory symptom of abnormality occurring in the user, and an information output unit (control unit) that, when the premonitory symptom determination unit determines that the premonitory symptom has occurred, outputs notification information indicating that occurrence of abnormality in the user is predicted.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A biological information processing system includes processor including hardware. The processor performs: acquisition processing in which pulse wave information is acquired; processing in which analysis processing on the pulse wave information is performed to generate analysis result information; and output processing in which the analysis result information that is generated is outputted. The processor generates information for displaying distribution information of a pulse interval found on the basis of the pulse wave information and a reliability index of measurement of the pulse wave information, as the analysis result information.