Abstract: An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

Abstract: A pattern shape inspection apparatus for displaying a specimen image on a display apparatus, and inspecting a pattern shape of the specimen image includes a memory for memorizing a reference image corresponding to an observation region and a display for simultaneously displaying the reference image and the specimen image. At least one of the image parameters of the specimen image and the reference image is corrected to aid in the comparison.

Abstract: In a pattern dimension measuring method for scanning a sample at a predetermined scanning pitch by a scanning probe as in a scanning electron microscope, forming a sample image using a scanning signal obtained from the sample, scanning a predetermined portion of a pattern to be measured in a sample image by said probe, and measuring a dimension of said predetermined portion by processing obtained scanning signal according to a predetermined algorithm, said scanning pitch is varied according to the case for positioning the pattern to be measured and the case for measuring the pattern dimension when observing in a low magnification, and said scanning pitch for measuring the pattern dimension is adjusted to be small, about a diameter of the probe.

Abstract: One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

Abstract: An electron beam, which can transmit through part of a specimen and can reach a portion that is not exposed to the electron beam, is irradiated, and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A three-dimensional model is assumed, the three-dimensional model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified three-dimensional model.

Abstract: One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

Abstract: Integrally molded polyurethane foam products that are free of bubbles formed from the gas evolved during foaming of foaming materials, that do not allow the foaming materials to exudate and that have surfaces with adequate gas permeability and soft to the touch, giving sufficient satisfaction at use, being free of stuffy and other unpleasant feelings to the touch. The present invention also relates to an integrally molded polyurethane foam product comprising a skin member that is formed into a desired form by sewing and a polyurethane foam that is made by foaming a foaming material being poured into said skin member, in which the skin member is made by laminating a fabric and a synthetic resin film and is provided with 5 to 100 through holes per cm.sup.2 in a diameter of 0.01 to 0.3 mm. The foaming pressure of the polyurethane material used in the production of these integrally molded polyurethane foam products is preferably 0.5 to 2.0 kg/cm.sup.2.

Abstract: A method for removing a resist pattern formed on a semiconductor wafer, and a curable pressure-sensitive adhesive, adhesive sheets and an apparatus used for the method. The resist-removing method comprising adhering an adhesive tape on an upper surface of a resist pattern formed on an article and peeling off the resist pattern together with the adhesive tape; the curable pressure-sensitive adhesive constituting the adhesive tape, comprising a pressure-sensitive adhesive polymer containing a non-volatile compound having at least one unsaturated double bond in the molecule and having a good affinity with a resist material to be removed; the adhesive sheet comprising a film substrate having formed thereon the curable pressure-sensitive adhesive; and the resist-removing apparatus comprising a means for press-adhering the adhesive tape, a tape-peeling means, and a substrate-washing means.

Abstract: One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

Abstract: A technique for displaying a scanned specimen image permits non-destructive observation of a surface structure having large or precipitous unevenness, an internal structure of a specimen or a specific structure of a defect or foreign matter, which non-destructive observation has hitherto been considered to be difficult to achieve. The technique can be applied to inspection and measurement so as to economically provide devices and parts of high quality and high reliability. Thus, secondary information such as secondary electrons resulting from interaction of primary information with a specimen, the primary information being generated as a result of interaction of a scanning electron beam with the specimen, is utilized as an image signal to form an image.

Abstract: The present invention enables the accuracy of aligning a wafer and a reticle with each other in the exposure step in the manufacture of a semiconductor integrated circuit device to be improved. The portions of a metal film 5 and a resist film 6 which cover an alignment mark 4 on a wafer 1 are removed by a gas assisted etching treatment using a laser beam prior to the execution of an exposure treatment, so as to bare the alignment mark 4. The position detecting light is then applied from an alignment mark position detecting means in a reduction projection exposure unit 11 to the alignment mark 4, the position of the alignment mark 4 being detected on the basis of the light reflected on and scattered from the alignment mark 4.

Abstract: Disclosed is a BaO-xTiO.sub.2 dielectric ceramic composition (x=3.5 to 4.5) containing BaTi.sub.4 O.sub.9 and Ba.sub.2 Ti.sub.9 O.sub.20, wherein the content ratio of Ba.sub.2 Ti.sub.9 O.sub.20 {Ba.sub.2 Ti.sub.9 O.sub.20 /(BaTi.sub.4 O.sub.9 +Ba.sub.2 Ti.sub.9 O.sub.20)}obtained by a X-ray diffraction maximum peak height integration method described below is less than 0.19,content ratio of Ba.sub.2 Ti.sub.9 O.sub.20 ={a peak height ascribed to the (421) face of Ba.sub.2 Ti.sub.9 O.sub.20 +a peak height ascribed to the (222) face thereof}/[{a peak height ascribed to the (200, 140) face of BaTi.sub.4 O.sub.9 +a peak height ascribed to the (121) face thereof+a peak height ascribed to the (230, 150) face thereof}+{a peak height ascribed to the (421) face of Ba.sub.2 Ti.sub.9 O.sub.20 +a peak height ascribed to the (222) face thereof}].In the above dielectric ceramic composition, it is possible to prevent the occurrence of hexagonal pattern cracks and hence to improve the yield.

Abstract: Disclosed herein is a microwave dielectric ceramic composition which comprises a compound represented by the formula BaO.multidot.xTiO.sub.2 (where 3.7.ltoreq.x.ltoreq.4.5) which is incorporated with 1.0-10 wt. % Ba.sub.3 Ti.sub.12 Zn.sub.7 O.sub.34 and 2-8 wt. % Ta.sub.2 O.sub.5. It has well-balanced performance owing to a Q value not less than 8000 (at 4.5 GHz), a relative permittivity .epsilon. not less than 31, and a practical temperature coefficient in the range of -15 to +10 ppm/.degree.C. It may be further incorporated with 0.1-0.4 wt. % MnO.sub.2 for improved sinterability in addition to the above-mentioned performance.

Abstract: In a ceramic superconducting composition, Ag20 is added thereto in an amount of 0.1 wt. % to 70 wt. % per mole of LaBa2Cu3O3-.delta.. The critical current density of the ceramic superconducting composition is affected by heat treatment conditions. The critical electric current density of the ceramic superconducting composition is increased when it is prepared through heat treatment while controlling the partial pressure of oxygen in a heat treatment atmosphere in steps with successive stages including a temperature-elevating step, a sintering step, a temperature-lowering step, and an annealing step.

Abstract: A sintered alumina-based ceramic body exhibiting excellent electrical characteristics, in particular, excellent dielectric power factor and a temperature coefficient of a resonant frequency, which consists essentially of 0.01 to 7 parts by weight of Ta.sub.2 O.sub.5 admixed with 100 parts by weight of an expanded Al.sub.2 O.sub.3 --SnO.sub.2 --TiO.sub.2 ternary base composition (by molar fraction) of:______________________________________ Al.sub.2 O.sub.3 SnO.sub.2 TiO.sub.2 ______________________________________ 0.925 0.055 0.020 0.625 0.285 0.090 0.625 0.0245 0.3505 0.925 0.010 0.065 ______________________________________Dielectric power factor tan .delta. of 10.times.10.sup.-5 or below and temperature coefficient (Tf) of the resonance frequency from -28 to +14 ppm/.degree. C. Tf=0 is achieved at a preferred range.

Abstract: A dielectric alumina ceramic body having a constant dielectric loss tangent tan .delta. is obtained by sintering a composition consisting essentially of:100 parts by weight of a ternary formulation consisting of 92.4 to 98.7 mol % Al.sub.2 O.sub.3, at least 0.5 mol % CaO, and 1.3 to 7.6 mol % TiO.sub.2 ; andat least one selected from the group consisting of Cr.sub.2 O.sub.3 and NiO subject to the relation of: ##EQU1## where x is the weight part of Cr.sub.2 O.sub.3 per 100 parts by weight of said formulation,y is the weight part of NiO per 100 parts by weight of said formulation, andz is the mol % of Al.sub.2 O.sub.3 in the formulation,provided that x.gtoreq.0 and y.gtoreq.0, except x=y=0.

Abstract: A sintered alumina porcelain composition is described consisting of a ternary composition consisting of from 96 to 99 mol % of Al.sub.2 O.sub.3 and the remainder consisting of CaO and TiO.sub.2 present in a CaO/TiO.sub.2 molar ratio of from 0.8/1 to 1.1/1 and SiO.sub.2, wherein based on 100 parts by weight of the ternary Al.sub.2 O.sub.3 --CaO--TiO.sub.2 composition, SiO.sub.2 is present in an amount within the range defined by the area within the straight lines connecting points A-B-C-D-E-F-A in the composition diagram set forth in the attached drawing for describing the relationship between the SiO.sub.2 content and the Al.sub.2 O.sub.3 molar ratio, provided that point A is excluded from the range of the SiO.sub.2 content, with said points having the following locations:______________________________________ SiO.sub.2 Al.sub.2 O.sub.3 (parts by weight) (mol %) ______________________________________ Point A 0 96 Point B 0.01 98 Point C 0.03 99 Point D 1.20 99 Point E 0.48 98 Point F 0.

Abstract: An alumina ceramic composition to provide a low dielectric loss in the high frequency region upon sintering, which consists essentially of: 100 parts by weight of a base composition containing therein Al.sub.2 O.sub.3, CaO and TiO.sub.2 within their respective compositional range; and 0.03 to 3 parts by weight of La.sub.2 O.sub.3. The base composition is within a range A-B-C-D-E-A in the ternary diagram (Figure) in molar fraction:______________________________________ Al.sub.2 O.sub.3 CaO TiO.sub.2 ______________________________________ A 99.0 0.5 0.5 B 94.5 3.7 1.8 C 90.0 7.0 3.0 D 90.0 2.0 8.0 E 94.5 1.3 4.

Abstract: Disclosed are dielectric porcelain materials having compositions falling in the quadrilateral area defined by connecting points A, B, C and D in the ternary diagram of components Al.sub.2 O.sub.3, CaTiO.sub.3 and SrTiO.sub.3 in the drawing. The points A, B, C and D are represented in mol % as follows:______________________________________ Al.sub.2 O.sub.3 CaTiO.sub.3 SiTiO.sub.3 ______________________________________ A 0.99 0.01 0 B 0.96 0.035 0.005 C 0.91 0.04 0.05 D 0.91 0.01 0.08. ______________________________________The dielectric porcelain materials have thermal coefficients between -15 and +15 and a no-load Q not less than 4000.

Abstract: An alumina porcelain composition is described, consisting of a main component made of from 96 to 99.5 mol % Al.sub.2 O.sub.3 and from 4 to 0.5 mol % of CaTiO.sub.3, and MgO as an auxiliary component, said MgO being present in an amount of not more than 1 part by weight per 100 parts by weight of the main component.